公开(公告)号：USD401665S

公开(公告)日：1998-11-24

申请号：US76979

申请日：1997-09-22

申请人： Takashi Kondoh ,  Yukio Itoh ,  Shigeo Mimura

设计人： Takashi Kondoh ,  Yukio Itoh ,  Shigeo Mimura

公开(公告)号：US06452222B1

公开(公告)日：2002-09-17

申请号：US09458510

申请日：1999-12-13

申请人： Yukio Itoh

发明人： Yukio Itoh

IPC分类号： H01L2976

CPC分类号： H01L29/7816 ,  H01L29/0696 ,  H01L29/1083 ,  H01L29/41758 ,  H01L29/41775 ,  H01L29/42368 ,  H01L29/66681

摘要： A horizontal type DMISFET is remarkably improved in its endurance of an over-voltage applied to a drain electrode thereof. In this MIS type semiconductor device, an N+-type source region assuming an octagonal-shaped configuration in plan view is selectively formed in a first P-type base region in a manner such that the N+-type source region is disposed adjacent to a peripheral portion of a P+-type base region, provided that the N+-type source region is not disposed on a center line through which a center of an N+-type drain region is connected with a center of the first P-type base region.

摘要翻译： 在施加到其漏电极的过电压的耐久性方面，水平型DMISFET显着提高。 在这种MIS型半导体器件中，在第一P型基极区域中选择性地形成在平面图中呈现八角形形状的N +型源极区域，使得N +型源极区域与周边 只要N +型源极区域不配置在N +型漏极区域的中心与第一P型基极区域的中心连接的中心线上，则P +型基极区域的部分。

公开(公告)号：US4581666A

公开(公告)日：1986-04-08

申请号：US379425

申请日：1982-05-18

申请人： Yukio Itoh

发明人： Yukio Itoh

IPC分类号： G11B15/44

CPC分类号： G11B15/442

摘要： A mechanism for fast-forwarding/rewinding operations in which an intermittent gear driven by a motor is used for actuating a control member for advancing and releasing one or more of a head, pinch roller and idler for tape reproduction against the force of an elastic member while a lock means can lock the control member in the reproducing mode, the locked condition by the lock means being released by operation of one or both of the operation levers for fast-forwarding and rewinding operations.

摘要翻译： 一种用于快进/倒带操作的机构，其中由马达驱动的间歇齿轮用于致动用于前进和释放头部，夹送辊和惰轮中的一个或多个的控制构件，以抵抗弹性构件的力 而锁定装置可以在再现模式下锁定控制构件，锁定装置的锁定状态由用于快进和倒带操作的一个或两个操作杆的操作而被释放。

公开(公告)号：US06373110B2

公开(公告)日：2002-04-16

申请号：US09789672

申请日：2001-02-21

申请人： Yukio Itoh ,  Takao Arai

发明人： Yukio Itoh ,  Takao Arai

IPC分类号： H01L2972

CPC分类号： H01L29/7816 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/42368 ,  H01L29/66681

摘要： A power field effect transistor includes a bulge portion and/or a constricted portion in at least one of the heavily doped drain contact region and the lightly doped channel forming region, and heavily doped source regions are formed in the lightly doped channel forming region at intervals, wherein the avalanche breakdown takes place at the bulge portion and/or the constricted portion due to the concentration of electric field in the presence of excess voltage applied to the heavily doped drain contact region, and the breakdown current flows through the gaps between the heavily doped source regions so that a emitter-base junction of a parasitic bipolar transistor is not strongly biased.

摘要翻译： 功率场效应晶体管包括在重掺杂漏极接触区域和轻掺杂沟道形成区域中的至少一个中的凸起部分和/或收缩部分，并且重掺杂源极区域以间隔形成在轻掺杂沟道形成区域中 ，其中由于在施加到重掺杂的漏极接触区域的过电压的存在下由于电场的浓度而在凸起部分和/或收缩部分处发生雪崩击穿，并且击穿电流流过重度掺杂的漏极接触区域之间的间隙 掺杂源极区，使得寄生双极晶体管的发射极 - 基极结不被强烈偏置。

公开(公告)号：USD394299S

公开(公告)日：1998-05-12

申请号：US056169

申请日：1996-06-25

申请人： Takeo Miyazaki ,  Yukio Itoh

设计人： Takeo Miyazaki ,  Yukio Itoh

公开(公告)号：US5449545A

公开(公告)日：1995-09-12

申请号：US006856

申请日：1993-01-21

申请人： Eiichi Toya ,  Yukio Itoh ,  Takashi Tanaka ,  Yasumi Sasaki

发明人： Eiichi Toya ,  Yukio Itoh ,  Takashi Tanaka ,  Yasumi Sasaki

IPC分类号： G03F1/22 ,  G03F1/60 ,  H01L21/027 ,  G03F9/00

CPC分类号： G03F1/22 ,  Y10T428/24322 ,  Y10T428/24331 ,  Y10T428/24355 ,  Y10T428/24917 ,  Y10T428/265 ,  Y10T428/30

摘要： A ceramic device is disclosed that has a silicon base plate, a first ceramic film formed on a first surface of the silicon base plate, a second ceramic film formed on a second surface of the silicon base plate opposite to the first surface, and an operation opening formed in the silicon base plate between the first and second surfaces. A surface portion of the first ceramic film exposed to the operation opening Is a mirror surface having 0.05 micrometers or less of center line average height Ra. A mirror surface keeping film can be formed between the first surface of the silicon base plate and the first ceramic film for keeping a mirror surface in an etching step to etch the silicon base plate, and the silicon base plate can be reduced partially in the etching step for forming an operation opening thereby exposing a corresponding portion of the mirror surface keeping film to the operation opening.

摘要翻译： 公开了一种陶瓷器件，其具有硅基板，形成在硅基板的第一表面上的第一陶瓷膜，形成在与第一表面相对的硅基板的第二表面上的第二陶瓷膜，以及操作 开口形成在第一和第二表面之间的硅基板中。 暴露于操作开口的第一陶瓷膜的表面部分是具有0.05微米或更小的中心线平均高度Ra的镜面。 在蚀刻步骤中，在硅基板的第一表面和第一陶瓷膜之间可以形成镜面保持膜，用于在蚀刻步骤中保持镜面，以蚀刻硅基板，并且可以在蚀刻中部分地减少硅基板 用于形成操作开口的步骤，从而将镜面保持膜的相应部分暴露于操作开口。

公开(公告)号：US4519269A

公开(公告)日：1985-05-28

申请号：US387909

申请日：1982-06-11

申请人： Yukio Itoh ,  Kazuki Takai ,  Satoshi Takagi

发明人： Yukio Itoh ,  Kazuki Takai ,  Satoshi Takagi

IPC分类号： G11B15/10 ,  G11B5/54 ,  G11B21/22

CPC分类号： G11B15/10 ,  Y10T74/20238

摘要： A transmission system in a cam mechanism having a cam and a driven member to be driven by the cam which comprises an electromagnetic plunger and a control member for having said driven member be driven by said cam while said electromagnetic plunger is energized and releasing said driven member from driving force of said cam when said electromagnetic plunger is deenergized.

摘要翻译： 一种凸轮机构中的传动系统，其具有凸轮和被凸轮驱动的从动构件，所述凸轮和被驱动构件由所述凸轮驱动，所述凸轮包括电磁柱塞和用于使所述从动构件由所述凸轮驱动的控制构件，同时所述电磁柱塞通电并释放所述从动构件 当所述电磁柱塞被断电时从所述凸轮的驱动力。

公开(公告)号：US4475020A

公开(公告)日：1984-10-02

申请号：US385363

申请日：1982-06-07

申请人： Kazuki Takai ,  Yasuo Yamada ,  Satoshi Takagi ,  Yukio Itoh

发明人： Kazuki Takai ,  Yasuo Yamada ,  Satoshi Takagi ,  Yukio Itoh

IPC分类号： H01H3/16 ,  H01H15/20

CPC分类号： H01H3/166

摘要： An operating device for switching a slide switch by moving a slide member of the slide switch in response to movement of an operating member includes an acting member which is provided on the operating member, is engageable with the slide member, and is movable against elastic force of an elastic member. The elastic force is slightly larger than the force necessary for slidable movement of the slide member and the stroke of the operating member is larger than that of the slide member.

摘要翻译： 用于通过移动滑动开关的滑动构件以响应于操作构件的移动来切换滑动开关的操作装置包括设置在操作构件上的作用构件，其可与滑动构件接合，并且能够抵抗弹性力 的弹性构件。 弹性力略大于滑动构件的滑动运动所需的力，并且操作构件的行程大于滑动构件的行程。

公开(公告)号：US06181186B2

公开(公告)日：2001-01-30

申请号：US09337678

申请日：1999-06-22

申请人： Yukio Itoh ,  Takao Arai

发明人： Yukio Itoh ,  Takao Arai

IPC分类号： H03K508

CPC分类号： H03K17/0822

摘要： A semiconductor device enables a semiconductor element to turn off accurately and quickly at the time of short circuit of the load to protect the semiconductor element from the short circuit of the load. The semiconductor device comprises a first switching measure for turning on/off a current flowing into the load, a current detector for detecting current flowing into the load, a second switching measure for turning on/off a connection between the current detector and the load, and a controller for controlling the first switching measure and the second switching measure. The controller turns on the first switching measure, before turning on the second switching measure at the start of driving of the load. The current detector turns off the first switching measure when detecting excess current.

摘要翻译： 半导体器件使半导体元件能够在负载短路时精确而快速地关断，以保护半导体元件免受负载的短路。 半导体器件包括用于接通/关断流入负载的电流的第一开关测量，用于检测流入负载的电流的电流检测器，用于接通/断开电流检测器与负载之间的连接的第二切换措施， 以及控制器，用于控制第一切换措施和第二切换措施。 控制器打开第一个开关量程，然后在开始负载开始时打开第二个开关量程。 当检测到过电流时，电流检测器关闭第一个开关量程。

公开(公告)号：US5703390A

公开(公告)日：1997-12-30

申请号：US550863

申请日：1995-10-31

申请人： Yukio Itoh

发明人： Yukio Itoh

IPC分类号： H01L27/04 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/78 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062

CPC分类号： H01L29/7835 ,  H01L27/088 ,  H01L29/7802

摘要： A semiconductor device including first, second, third and fourth MOSFETs constituting an H bridge circuit. Each of the first and second MOSFETs is a vertical DMOSFET and each of the third and fourth MOSFETs is a lateral DMOSFET having a surface diffusion region formed in a portion of a drain region. The surface diffusion region has a conductivity type opposite that of a source region of the lateral DMOSFET and is electrically connected to the source region. Each of the surface diffusion regions may be made of a part of a channel stop region formed under a field insulator film. Each of the third and fourth MOSFETs may be a lateral DMOSFET having no surface diffusion region. Low on-resistance and small chip size of the device are obtained.

摘要翻译： 一种包括构成H桥电路的第一，第二，第三和第四MOSFET的半导体器件。 第一和第二MOSFET中的每一个是垂直DMOSFET，并且第三和第四MOSFET中的每一个是具有在漏极区域的一部分中形成的表面扩散区域的横向DMOSFET。 表面扩散区具有与横向DMOSFET的源极区相反的导电类型，并且电连接到源极区。 每个表面扩散区域可以由形成在场绝缘膜下面的沟道阻挡区域的一部分制成。 第三和第四MOSFET中的每一个可以是没有表面扩散区域的横向DMOSFET。 获得了器件的低导通电阻和小芯片尺寸。