-
公开(公告)号：US20220359749A1
公开(公告)日：2022-11-10
申请号：US17564688
申请日：2021-12-29
Inventor： Seong Hyun LEE , Dongwoo SUH , Sang Hoon KIM , Jeong Woo PARK , Tae Moon ROH
Abstract: Provided is a semiconductor device. The semiconductor device includes a semiconductor substrate including monocrystalline silicon or polycrystalline silicon, a first insulating layer on the semiconductor substrate, the first insulating layer including a local region in which a portion of an upper surface of the first insulating layer is recessed, a channel layer provided in the local region of the first insulating layer, a silicide provided on one side surface of the channel layer, a control gate provided on the channel layer, a gate insulating film provided between the channel layer and the control gate, and a polarity control gate arranged so as to overlap an interface between the channel layer and the silicide, wherein the polarity control gate is spaced apart from the control gate, and the channel layer includes monocrystalline silicon.
-
Patent Agency Ranking
公开(公告)号：US20220020671A1
公开(公告)日：2022-01-20
申请号：US17380583
申请日：2021-07-20
Inventor： Dong Yun JUNG , Hyun Gyu JANG , Sung Kyu KWON , Kun Sik PARK , Jong Il WON , Seong Hyun LEE , Jong Won LIM , Doo Hyung CHO
IPC: H01L23/495 , H01L23/00
Abstract: The present invention minimizes parasitic inductance at the time of packaging a semiconductor that requires high efficiency and high-speed switching driving. In implementing a semiconductor package composed of one or more switching devices and one or more diode devices, the present invention provides a flip-stack structure in which a switching device is mounted on an insulating substrate or a metal frame, a flat metal is bonded onto the switching device, and a diode device is flipped and stacked on the flat metal, and accordingly, the flat metal with a large area is used for connection between the devices and between the devices and the insulating substrate, thereby minimizing parasitic inductance generated at a time of semiconductor packaging and automating the entire process of the semiconductor packaging.
-
公开(公告)号：US20140102521A1
公开(公告)日：2014-04-17
申请号：US13842059
申请日：2013-03-15
Inventor： JungWook LIM , Sun Jin YUN , Seong Hyun LEE , Da Jung LEE
IPC: H01L31/0392 , H01L31/076 , H01L31/0376 , H01L31/075 , H01L31/0368
CPC classification number: H01L31/0392 , H01L31/03685 , H01L31/03762 , H01L31/03921 , H01L31/0684 , H01L31/075 , H01L31/076 , Y02E10/545 , Y02E10/547 , Y02E10/548
Abstract: Provided is a thin film silicon solar cell including a first optical absorption layer, a first transparent electrode disposed in a surface of the first optical absorption layer, a first transparent substrate covering the first transparent electrode, a second transparent electrode disposed another surface of the first optical absorption layer, and a second transparent substrate covering the second transparent electrode, wherein the first optical absorption layer has a thickness of about 500 Å to about 2000 Å.
Abstract translation: 提供一种薄膜硅太阳能电池，其包括第一光吸收层，设置在第一光吸收层的表面中的第一透明电极，覆盖第一透明电极的第一透明基板，设置第一透明电极的另一表面的第二透明电极 光吸收层和覆盖第二透明电极的第二透明基板，其中第一光吸收层具有大约至大约的厚度。
-
公开(公告)号：US20230402529A1
公开(公告)日：2023-12-14
申请号：US18327417
申请日：2023-06-01
Inventor： Sang Hoon KIM , Dongwoo SUH , JINHA KIM , Jeong Woo PARK , Seong Hyun LEE , Wangjoo LEE
IPC: H01L29/66 , H01L29/423 , H01L29/10 , H01L29/786
CPC classification number: H01L29/66545 , H01L29/66553 , H01L29/42392 , H01L29/1054 , H01L29/78696
Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming alternating layers, where a silicon germanium layer and a silicon layer are alternately stacked, on a substrate, etching the alternating layers to form a fin structure protruding onto the substrate and then forming a silicon nitride film on a surface and a sidewall of each of the alternating layers having the fin structure, sequentially forming a dummy gate and a silicon oxide film on the alternating layers with the silicon nitride film therebetween and then forming a gate spacer on a sidewall of the dummy gate, etching the silicon nitride film upward exposed, and then, etching the alternating layers by using the silicon oxide film, and selectively forming an inner spacer in a sidewall of each of silicon germanium layers among the silicon germanium layers and silicon layers of the etched alternating layers.
-
公开(公告)号：US20150129036A1
公开(公告)日：2015-05-14
申请号：US14291146
申请日：2014-05-30
Inventor： JungWook LIM , Sun Jin YUN , Seong Hyun LEE
IPC: H01L31/054
CPC classification number: H01L31/0549 , H01L31/03762 , H01L31/056 , H01L31/06 , Y02E10/52 , Y02E10/548
Abstract: Provided is a silicon solar cell including a first electrode, a lower light absorption layer disposed on the first electrode, an upper light absorption layer disposed on the lower light absorption layer, and an intermediate reflector layer provided between the lower light absorption layer and the upper light absorption layer. The intermediate reflector layer includes copper oxide.
Abstract translation: 提供一种硅太阳能电池，其包括第一电极，设置在第一电极上的下部光吸收层，设置在下部光吸收层上的上部光吸收层，以及设置在下部光吸收层与上部光吸收层之间的中间反射层 光吸收层。 中间反射层包括氧化铜。
-
公开(公告)号：US20140238479A1
公开(公告)日：2014-08-28
申请号：US14179067
申请日：2014-02-12
Inventor： JungWook LIM , Sun Jin YUN , Seong Hyun LEE
IPC: H01L31/0216
CPC classification number: H01L31/0749 , H01L31/03923 , Y02E10/541
Abstract: Provided is a thin film solar cell including a rear electrode formed on a substrate, a light absorbing layer formed on the rear electrode, a buffer layer formed on the light absorbing layer, and a front transparent electrode formed on the buffer layer. The buffer layer includes copper oxide.
Abstract translation: 提供了一种薄膜太阳能电池，其包括形成在基板上的后电极，形成在后电极上的光吸收层，形成在光吸收层上的缓冲层和形成在缓冲层上的前透明电极。 缓冲层包括氧化铜。
-
-
-
-
-
Search Results
6
records
(took 0.017 seconds)
