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    Method of making a nonvolatile memory device including forming a pillar shaped semiconductor device and a shadow mask
    1.
    发明授权
    Method of making a nonvolatile memory device including forming a pillar shaped semiconductor device and a shadow mask 有权
    制造包括形成柱状半导体器件和荫罩的非易失性存储器件的方法

    公开(公告)号：US07579232B1

    公开(公告)日：2009-08-25

    申请号：US12216924

    申请日：2008-07-11

    申请人： Er-Xuan Ping ,  Randhir Thakur ,  Klaus Scheugraf

    发明人： Er-Xuan Ping ,  Randhir Thakur ,  Klaus Scheugraf

    IPC分类号： H01L21/8234 ,  H01L21/8222 ,  H01L21/425

    CPC分类号： H01L27/1021 ,  H01L21/7688 ,  H01L27/101

    摘要： A method of making a semiconductor device includes forming a pillar shaped semiconductor device surrounded by an insulating layer such that a contact hole in the insulating layer exposes an upper surface of the semiconductor device. The method also includes forming a shadow mask layer over the insulating layer such that a portion of the shadow mask layer overhangs a portion of the contact hole, forming a conductive layer such that a first portion of the conductive layer is located on the upper surface of the semiconductor device exposed in the contact hole and a second portion of the conductive layer is located over the shadow mask layer, and removing the shadow mask layer and the second portion of the conductive layer.

    摘要翻译： 制造半导体器件的方法包括形成由绝缘层包围的柱状半导体器件，使得绝缘层中的接触孔露出半导体器件的上表面。 该方法还包括在绝缘层上形成荫罩层，使得阴影掩模层的一部分悬垂在接触孔的一部分上，形成导电层，使得导电层的第一部分位于 暴露在接触孔中的半导体器件和导电层的第二部分位于荫罩层之上，并且去除荫罩层和导电层的第二部分。

    Formation of conductive rugged silicon
    2.
    发明授权
    Formation of conductive rugged silicon 失效

    公开(公告)号：US06509227B1

    公开(公告)日：2003-01-21

    申请号：US09503572

    申请日：2000-02-14

    申请人： Er-Xuan Ping ,  Randhir Thakur

    发明人： Er-Xuan Ping ,  Randhir Thakur

    IPC分类号： H01L218242

    CPC分类号： H01L28/84 ,  C23C16/24 ,  C23C16/56 ,  Y10S438/964

    摘要： The present invention provides methods of forming in situ doped rugged silicon and semiconductor devices incorporating conductive rugged silicon. In one aspect, the methods involve forming a layer of doped amorphous silicon on a substrate at a substantially constant deposition temperature; and converting the amorphous silicon layer into hemispherical grain silicon by annealing the amorphous silicon layer at substantially the deposition temperature while varying pressure. In another aspect, the methods involve forming a discontinuous first layer of doped silicon on a substrate; forming a second layer of amorphous silicon on the first layer of doped silicon and the substrate not covered by the first layer of doped silicon; and annealing the first and second layers. In yet another aspect, the methods involve forming a discontinuous first layer of silicon on a substrate and forming a second conformal layer of doped amorphous silicon on the first layer of doped silicon.

    Diffusion-enhanced crystallization of amorphous materials to improve surface roughness
    3.
    发明授权
    Diffusion-enhanced crystallization of amorphous materials to improve surface roughness 失效
    非晶材料的扩散增强结晶提高表面粗糙度

    公开(公告)号：US06930015B2

    公开(公告)日：2005-08-16

    申请号：US10319938

    申请日：2002-12-16

    申请人： Er-Xuan Ping ,  Randhir Thakur

    发明人： Er-Xuan Ping ,  Randhir Thakur

    IPC分类号： H01L21/00 ,  H01L21/02 ,  H01L21/20 ,  H01L21/8242 ,  H01L21/84

    CPC分类号： H01L21/02667 ,  H01L21/02532 ,  H01L21/0257 ,  H01L21/02645 ,  H01L21/2022 ,  H01L27/1085 ,  H01L28/84 ,  H01L28/90

    摘要： Methods of forming a roughened surface through diffusion-enhanced crystallization of an amorphous material are disclosed. In one aspect, conductive hemispherical grain silicon can be formed through dopant diffusion-enhanced crystallization of one or more layers of amorphous silicon. To further enhance uniformity in the formation of the hemispherical grain silicon, the exposed surface of the amorphous silicon can be seeded before crystallization to further enhance uniformity of the surface structures formed in the hemispherical grain silicon.

    摘要翻译： 公开了通过非晶材料的扩散增强结晶形成粗糙表面的方法。 在一个方面，可以通过一个或多个非晶硅层的掺杂剂扩散增强结晶来形成导电半球形晶粒硅。 为了进一步提高半球形晶粒硅的形成的均匀性，可以在结晶之前将非晶硅的暴露表面接种，以进一步增强在半球形晶粒硅中形成的表面结构的均匀性。

    Diffusion-enhanced crystallization of amorphous materials to improve surface roughness
    4.
    发明授权
    Diffusion-enhanced crystallization of amorphous materials to improve surface roughness 失效
    非晶材料的扩散增强结晶提高表面粗糙度

    公开(公告)号：US06511892B1

    公开(公告)日：2003-01-28

    申请号：US09138879

    申请日：1998-08-24

    申请人： Er-Xuan Ping ,  Randhir Thakur

    发明人： Er-Xuan Ping ,  Randhir Thakur

    IPC分类号： H01L2120

    CPC分类号： H01L21/02667 ,  H01L21/02532 ,  H01L21/0257 ,  H01L21/02645 ,  H01L21/2022 ,  H01L27/1085 ,  H01L28/84 ,  H01L28/90

    摘要： Methods of forming a roughened surface through diffusion-enhanced crystallization of an amorphous material are disclosed. In one aspect, conductive hemispherical grain silicon can be formed through dopant diffusion-enhanced crystallization of one or more layers of amorphous silicon. To further enhance uniformity in the formation of the hemispherical grain silicon, the exposed surface of the amorphous silicon can be seeded before crystallization to further enhance uniformity of the surface structures formed in the hemispherical grain silicon.

    摘要翻译： 公开了通过非晶材料的扩散增强结晶形成粗糙表面的方法。 在一个方面，可以通过一个或多个非晶硅层的掺杂剂扩散增强结晶来形成导电半球形晶粒硅。 为了进一步提高半球形晶粒硅的形成的均匀性，可以在结晶之前将非晶硅的暴露表面接种，以进一步增强在半球形晶粒硅中形成的表面结构的均匀性。

    Formation of conductive rugged silicon
    6.
    发明授权
    Formation of conductive rugged silicon 失效
    形成导电坚固的硅

    公开(公告)号：US06350648B1

    公开(公告)日：2002-02-26

    申请号：US09503669

    申请日：2000-02-14

    申请人： Er-Xuan Ping ,  Randhir Thakur

    发明人： Er-Xuan Ping ,  Randhir Thakur

    IPC分类号： C23C1624

    CPC分类号： H01L28/84 ,  C23C16/24 ,  C23C16/56 ,  Y10S438/964

    摘要： The present invention provides methods of forming in situ doped rugged silicon and semiconductor devices incorporating conductive rugged silicon. In one aspect, the methods involve forming a layer of doped amorphous silicon on a substrate at a substantially constant deposition temperature; and converting the amorphous silicon layer into hemispherical grain silicon by annealing the amorphous silicon layer at substantially the deposition temperature while varying pressure. In another aspect, the methods involve forming a discontinuous first layer of doped silicon on a substrate; forming a second layer of amorphous silicon on the first layer of doped silicon and the substrate not covered by the first layer of doped silicon; and annealing the first and second layers. In yet another aspect, the methods involve forming a discontinuous first layer of silicon on a substrate and forming a second conformal layer of doped amorphous silicon on the first layer of doped silicon.

    摘要翻译： 本发明提供了形成原位掺杂的坚固硅和掺入导电坚固硅的半导体器件的方法。 在一个方面，所述方法包括在基本上恒定的沉积温度下在衬底上形成掺杂的非晶硅层; 以及通过在改变压力的同时基本上淀积温度退火所述非晶硅层，将所述非晶硅层转化为半球形晶粒硅。 在另一方面，所述方法包括在衬底上形成不连续的第一掺杂硅层; 在所述第一掺杂硅层上形成第二非晶硅层，并且所述衬底未被所述第一掺杂硅层覆盖; 并退火第一和第二层。 在另一方面，所述方法包括在衬底上形成不连续的第一硅层，并在第一掺杂硅层上形成掺杂非晶硅的第二共形层。

    Diffusion-enhanced crystallization of amorphous materials to improve surface roughness
    8.
    发明授权
    Diffusion-enhanced crystallization of amorphous materials to improve surface roughness 失效
    非晶材料的扩散增强结晶提高表面粗糙度

    公开(公告)号：US07238613B2

    公开(公告)日：2007-07-03

    申请号：US11158746

    申请日：2005-06-22

    申请人： Er-Xuan Ping ,  Randhir Thakur

    发明人： Er-Xuan Ping ,  Randhir Thakur

    IPC分类号： H01L21/477 ,  B05D5/12

    CPC分类号： H01L21/02667 ,  H01L21/02532 ,  H01L21/0257 ,  H01L21/02645 ,  H01L21/2022 ,  H01L27/1085 ,  H01L28/84 ,  H01L28/90

    摘要： Methods of forming a roughened surface through diffusion-enhanced crystallization of an amorphous material are disclosed. In one aspect, conductive hemispherical grain silicon can be formed through dopant diffusion-enhanced crystallization of one or more layers of amorphous silicon. To further enhance uniformity in the formation of the hemispherical grain silicon, the exposed surface of the amorphous silicon can be seeded before crystallization to further enhance uniformity of the surface structures formed in the hemispherical grain silicon.

    摘要翻译： 公开了通过非晶材料的扩散增强结晶形成粗糙表面的方法。 在一个方面，可以通过一个或多个非晶硅层的掺杂剂扩散增强结晶来形成导电半球形晶粒硅。 为了进一步提高半球形晶粒硅的形成的均匀性，可以在结晶之前将非晶硅的暴露表面接种，以进一步增强在半球形晶粒硅中形成的表面结构的均匀性。

    Formation of conductive rugged silicon
    9.
    发明授权
    Formation of conductive rugged silicon 失效

    公开(公告)号：US6069053A

    公开(公告)日：2000-05-30

    申请号：US808235

    申请日：1997-02-28

    申请人： Er-Xuan Ping ,  Randhir Thakur

    发明人： Er-Xuan Ping ,  Randhir Thakur

    IPC分类号： C23C16/24 ,  C23C16/56 ,  H01L21/02

    CPC分类号： H01L28/84 ,  C23C16/24 ,  C23C16/56 ,  Y10S438/964

    摘要： The present invention provides methods of forming in situ doped rugged silicon and semiconductor devices incorporating conductive rugged silicon. In one aspect, the methods involve forming a layer of doped amorphous silicon on a substrate at a substantially constant deposition temperature; and converting the amorphous silicon layer into hemispherical grain silicon by annealing the amorphous silicon layer at substantially the deposition temperature while varying pressure. In another aspect, the methods involve forming a discontinuous first layer of doped silicon on a substrate; forming a second layer of amorphous silicon on the first layer of doped silicon and the substrate not covered by the first layer of doped silicon; and annealing the first and second layers. In yet another aspect, the methods involve forming a discontinuous first layer of silicon on a substrate and forming a second conformal layer of doped amorphous silicon on the first layer of doped silicon.