公开(公告)号：US20230312980A1

公开(公告)日：2023-10-05

申请号：US18117162

申请日：2023-03-03

Applicant: FUJIMI INCORPORATED

Inventor： Ryota MAE ,  Akane KUMAYAMA ,  Masaki TADA

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/306

CPC classification number: C09G1/02 ,  C09K3/1409 ,  H01L21/30625

Abstract: Provided is a means capable of polishing an organic material at a high polishing speed and reducing the number of scratches after polishing. The polishing composition of the present invention contains zirconia particles and a dispersing medium, in which the zirconia particles contain at least one of tetragonal zirconia and cubic zirconia, and an average secondary particle size of the zirconia particles is less than 80 nm.

公开(公告)号：US20230312981A1

公开(公告)日：2023-10-05

申请号：US18119460

申请日：2023-03-09

Applicant: FUJIMI INCORPORATED

Inventor： Ryota MAE ,  Yuki OZEKI ,  Akane KUMAYAMA ,  Masaki TADA

IPC: C09G1/02 ,  C09K3/14 ,  B24B37/04

CPC classification number: C09G1/02 ,  C09K3/1409 ,  B24B37/044

Abstract: The present invention provides a method for producing an inorganic particle-containing slurry, by which the number of coarse particles can be sufficiently reduced. The present invention is a method for producing an inorganic particle-containing slurry, which comprises: a step of preparing an inorganic particle dispersion containing inorganic particles and a dispersing medium, and having a pH less than the isoelectric point of the inorganic particles; and a step of adding an alkaline compound to the inorganic particle dispersion in such a manner that the pH does not reach the isoelectric point of the inorganic particles.

公开(公告)号：US20240327674A1

公开(公告)日：2024-10-03

申请号：US18596278

申请日：2024-03-05

Applicant: FUJIMI INCORPORATED

Inventor： Ryota MAE ,  Akane KUMAYAMA

IPC: C09G1/02 ,  H01L21/3105

CPC classification number: C09G1/02 ,  H01L21/31053

Abstract: The present invention provides a means capable of polishing a Low-k material and silicon nitride at a high polishing removal rate and making a selection ratio of a polishing removal rate of the Low-k material to a polishing removal rate of the silicon nitride appropriate. The present invention provides a means capable of making a selection ratio of a polishing removal rate of silicon nitride to a polishing removal rate of silicon oxide appropriate while polishing silicon oxide and silicon nitride at a high polishing removal rate and capable of reducing defects on a silicon oxide surface after polishing.
The present invention is a polishing composition containing abrasive grains and an alkylamine compound having at least one linear or branched alkyl group having 2 or more and 15 or less carbon atoms, in which a pH is less than 7, and a zeta potential of the abrasive grains in the polishing composition is negative.

公开(公告)号：US20240309240A1

公开(公告)日：2024-09-19

申请号：US18602204

申请日：2024-03-12

Applicant: FUJIMI INCORPORATED

Inventor： Ryota MAE ,  Akane KUMAYAMA

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: The present invention provides a means capable of polishing a Low-k material and silicon nitride each at a high polishing removal rate and making a selection ratio of a polishing removal rate of the Low-k material to a polishing removal rate of the silicon nitride appropriate.
The present invention is a polishing composition containing abrasive grains and a quaternary phosphonium salt, in which a pH is less than 7.0, and a zeta potential of the abrasive grains in the polishing composition is −10 mV or less.

公开(公告)号：US20230287243A1

公开(公告)日：2023-09-14

申请号：US18168448

申请日：2023-02-13

Applicant: FUJIMI INCORPORATED

Inventor： Masaki TADA ,  Akane KUMAYAMA

IPC: C09G1/02 ,  B24B37/04 ,  H01L21/3105

CPC classification number: C09G1/02 ,  B24B37/044 ,  H01L21/31053

Abstract: To provide means for improving a ratio of a polishing speed of SiOC to a polishing speed of SiN. There is provided a polishing composition containing: abrasive grains containing at least one kind of zirconia particles; a selection ratio improver containing at least one kind of a salt composed of a monovalent anion and a monovalent or higher valent cation and improving a ratio of a polishing speed of SiOC to a polishing speed of SiN; and a pH adjusting agent containing at least one kind of an acid, in which a pH is more than 3.0 and less than 7.0, and a zeta potential of the abrasive grain is a positive value.