公开(公告)号：US20230312980A1

公开(公告)日：2023-10-05

申请号：US18117162

申请日：2023-03-03

Applicant: FUJIMI INCORPORATED

Inventor： Ryota MAE ,  Akane KUMAYAMA ,  Masaki TADA

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/306

CPC classification number: C09G1/02 ,  C09K3/1409 ,  H01L21/30625

Abstract: Provided is a means capable of polishing an organic material at a high polishing speed and reducing the number of scratches after polishing. The polishing composition of the present invention contains zirconia particles and a dispersing medium, in which the zirconia particles contain at least one of tetragonal zirconia and cubic zirconia, and an average secondary particle size of the zirconia particles is less than 80 nm.

公开(公告)号：US20230287243A1

公开(公告)日：2023-09-14

申请号：US18168448

申请日：2023-02-13

Applicant: FUJIMI INCORPORATED

Inventor： Masaki TADA ,  Akane KUMAYAMA

IPC: C09G1/02 ,  B24B37/04 ,  H01L21/3105

CPC classification number: C09G1/02 ,  B24B37/044 ,  H01L21/31053

Abstract: To provide means for improving a ratio of a polishing speed of SiOC to a polishing speed of SiN. There is provided a polishing composition containing: abrasive grains containing at least one kind of zirconia particles; a selection ratio improver containing at least one kind of a salt composed of a monovalent anion and a monovalent or higher valent cation and improving a ratio of a polishing speed of SiOC to a polishing speed of SiN; and a pH adjusting agent containing at least one kind of an acid, in which a pH is more than 3.0 and less than 7.0, and a zeta potential of the abrasive grain is a positive value.

公开(公告)号：US20230312981A1

公开(公告)日：2023-10-05

申请号：US18119460

申请日：2023-03-09

Applicant: FUJIMI INCORPORATED

Inventor： Ryota MAE ,  Yuki OZEKI ,  Akane KUMAYAMA ,  Masaki TADA

IPC: C09G1/02 ,  C09K3/14 ,  B24B37/04

CPC classification number: C09G1/02 ,  C09K3/1409 ,  B24B37/044

Abstract: The present invention provides a method for producing an inorganic particle-containing slurry, by which the number of coarse particles can be sufficiently reduced. The present invention is a method for producing an inorganic particle-containing slurry, which comprises: a step of preparing an inorganic particle dispersion containing inorganic particles and a dispersing medium, and having a pH less than the isoelectric point of the inorganic particles; and a step of adding an alkaline compound to the inorganic particle dispersion in such a manner that the pH does not reach the isoelectric point of the inorganic particles.

公开(公告)号：US20190071588A1

公开(公告)日：2019-03-07

申请号：US16084724

申请日：2017-03-06

Applicant: FUJIMI INCORPORATED

Inventor： Masaki TADA

IPC: C09G1/02 ,  H01L21/306

Abstract: The present invention provides a polishing composition which is suitable for polishing an object to be polished having a layer containing a Group III-V compound, suppresses etching of the Group III-V compound, and is capable of polishing at a high polishing speed. The polishing composition according to the present invention is a polishing composition used for polishing an object to be polished having a layer containing a Group III-V compound and contains abrasive grains, an oxidizer, and an anionic surfactant.

公开(公告)号：US20170275498A1

公开(公告)日：2017-09-28

申请号：US15509272

申请日：2015-09-28

Applicant: FUJIMI INCORPORATED

Inventor： Shuichi TAMADA ,  Masaki TADA

IPC: C09G1/02 ,  C09K3/14

CPC classification number: C09G1/02 ,  B24B37/00 ,  B24B37/044 ,  C09K3/1409 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/30625

Abstract: Provided is a polishing composition which is suitable for polishing an object of polishing having a layer containing a high mobility material that has higher carrier mobility than Si, suppresses excessive dissolution of the layer containing a high mobility material, and is capable of efficient polishing.Disclosed is a polishing composition that is used for polishing an object of polishing having a layer containing a high mobility material that has higher carrier mobility than Si, the polishing composition including abrasive grains and at least one salt compound selected from the group consisting of a salt of a monovalent acid, a salt of a divalent acid, a salt of a trivalent acid, and a halide salt, in which the electrical conductivity is 1 mS/cm or higher, and a content of hydrogen peroxide is less than 0.1% by mass.