CLEANING COMPOSITION FOR SEMICONDUCTOR DEVICE-MANUFACTURING APPARATUS AND CLEANING METHOD
    3.
    发明申请
    CLEANING COMPOSITION FOR SEMICONDUCTOR DEVICE-MANUFACTURING APPARATUS AND CLEANING METHOD 审中-公开
    用于半导体器件制造设备和清洁方法的清洁组合物

    公开(公告)号:US20070161529A1

    公开(公告)日:2007-07-12

    申请号:US11614760

    申请日:2006-12-21

    摘要: A cleaning composition for a semiconductor device-manufacturing apparatus comprising, based on the weight of the composition, 0.1-10% by weight of at least one fluorine compound selected from sodium fluoride, potassium fluoride, lithium fluoride and ammonium fluoride; 1-50% by weight of at least one phosphoric ingredient selected from phosphoric acid and a phosphoric acid salt; 0.5-35% by weight of hydrogen peroxide; 0-5% by weight of hydrofluoric acid, and the remainder of water, wherein the ratio (H2O2/F) by weight of hydrogen peroxide to fluorine in the total of the fluorine compound and the hydrofluoric acid is at least 4. The cleaning composition is used for cleaning semiconductor device-manufacturing apparatus having deposited thereon at least one deposited metal ingredient selected from metallic titanium, titanium oxide, titanium nitride, metallic copper, copper oxide, metallic tantalum, tantalum oxide and tantalum nitride to remove these deposited metal ingredients.

    摘要翻译: 一种半导体装置制造装置用清洗组合物,其特征在于,以组合物的重量为基准,含有0.1-10重量%的选自氟化钠,氟化钾,氟化锂和氟化铵的至少一种氟化合物; 1-50重量%的选自磷酸和磷酸盐的至少一种磷成分; 0.5-35重量%的过氧化氢; 0-5重量%的氢氟酸,剩余的水,其中过氧化氢与氟的重量比(H 2 N 2 O 2 / F)为 氟化合物和氢氟酸的总和至少为4.清洁组合物用于清洁其上沉积有至少一种选自金属钛,氧化钛,氮化钛,金属铜,铜的沉积金属成分的半导体器件制造装置 氧化物,金属钽,氧化钽和氮化钽,以除去这些沉积的金属成分。

    ETCHING COMPOSITION AND METHOD FOR ETCHING A SUBSTRATE
    4.
    发明申请
    ETCHING COMPOSITION AND METHOD FOR ETCHING A SUBSTRATE 审中-公开
    蚀刻组合物和蚀刻基材的方法

    公开(公告)号:US20090008366A1

    公开(公告)日:2009-01-08

    申请号:US12208732

    申请日:2008-09-11

    IPC分类号: B44C1/22

    CPC分类号: H01L21/31111 H01L21/67086

    摘要: This etching composition for etching hafnium compound, includes a fluoride compound and a chloride compound. This method for etching a substrate, includes etching a film which contains hafnium compound and is formed on a substrate by using an etching composition, wherein the etching composition contains a fluoride compound and a chloride compound.

    摘要翻译: 用于蚀刻铪化合物的蚀刻组合物包括氟化物和氯化物。 用于蚀刻基板的方法包括使用蚀刻组合物蚀刻含有铪化合物的膜并在基板上形成,其中蚀刻组合物含有氟化物和氯化物。

    Apparatus for manufacturing dye-sensitized solar cell, and method of manufacturing dye-sensitized solar cell
    10.
    发明授权
    Apparatus for manufacturing dye-sensitized solar cell, and method of manufacturing dye-sensitized solar cell 有权
    染料敏化太阳能电池的制造装置及染料敏化太阳能电池的制造方法

    公开(公告)号:US08969123B2

    公开(公告)日:2015-03-03

    申请号:US13580782

    申请日:2011-02-24

    IPC分类号: H01L31/18 H01L51/48 H01G9/20

    摘要: In an apparatus for manufacturing a dye-sensitized solar cell, a photosensitization dye solution makes contact with an electrode material layer that functions as a working electrode of a dye-sensitized solar cell so that the photosensitizing dye is adsorbed on the layer. Such an apparatus for manufacturing a dye-sensitized solar cell has a substrate housing section to house a substrate with the electrode material layer formed on its surface, and a circulation mechanism to circulate the photosensitization dye solution in such a way that the solution passes a surface of the substrate housed in the substrate housing section. In such an apparatus, a cross-sectional area of a flow path for the photosensitization dye solution in a portion facing the substrate in the substrate housing section is set smaller than a cross-sectional area of a flow path for the photosensitization dye solution in other portions.

    摘要翻译: 在染料敏化太阳能电池的制造装置中,光敏染料溶液与作为染料敏化太阳能电池的工作电极的电极材料层接触,使得光敏染料被吸附在该层上。 用于制造染料敏化太阳能电池的这种装置具有:基板容纳部,用于容纳其表面上形成有电极材料层的基板;以及循环机构,使光敏染料溶液循环使得溶液通过表面 的衬底容纳在衬底容纳部分中。 在这样的装置中,在基板容纳部中面向基板的部分中的光敏染料溶液的流路的截面积被设定为小于其他光敏染料溶液的流路的截面面积 部分。