公开(公告)号：US09633946B1

公开(公告)日：2017-04-25

申请号：US15140121

申请日：2016-04-27

Applicant: GLOBALFOUNDRIES INC.

Inventor： Jim Shih-Chun Liang ,  Domingo A. Ferrer ,  Kathryn T. Schonenberg ,  Shahrukh Akbar Khan ,  Wei-Tsu Tseng

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/532 ,  H01L23/528 ,  H01L23/522 ,  H01L21/768

CPC classification number: H01L21/76814 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/7688 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/53266

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to seamless metallization structures and methods of manufacture. A structure includes: a contact opening formed in an oxide material and in alignment with an underlying structure; a metal liner lining the sidewalls and bottom of the contact opening, in direct electrical contact with the underlying structure; a conductive liner on the metal liner, within the contact opening; and tungsten fill material on the conductive liner and within the contact opening.

公开(公告)号：US09431485B2

公开(公告)日：2016-08-30

申请号：US14580274

申请日：2014-12-23

Applicant: GLOBALFOUNDRIES INC.

Inventor： Shafaat Ahmed ,  Murshed M. Chowdhury ,  Aritra Dasgupta ,  Mohammad Hasanuzzaman ,  Shahrukh Akbar Khan ,  Joyeeta Nag

IPC: H01L21/265 ,  H01L29/10 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/1045 ,  H01L21/265 ,  H01L21/26513 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/66795 ,  H01L29/7851

Abstract: A method of forming a finFET structure having an ion implanted intermediate region next to the channel region of a finFET gate. The intermediate region is formed in a manner to reduce or eliminate migration of the dopant to undoped regions of the finFET thus forming abrupt finFET junction.

Abstract translation: 一种在finFET栅极的沟道区域旁边形成离子注入中间区域的finFET结构的方法。 中间区域以减少或消除掺杂剂向finFET的未掺杂区域迁移的方式形成，从而形成突变的finFET结。