公开(公告)号：US09633946B1

公开(公告)日：2017-04-25

申请号：US15140121

申请日：2016-04-27

Applicant: GLOBALFOUNDRIES INC.

Inventor： Jim Shih-Chun Liang ,  Domingo A. Ferrer ,  Kathryn T. Schonenberg ,  Shahrukh Akbar Khan ,  Wei-Tsu Tseng

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/532 ,  H01L23/528 ,  H01L23/522 ,  H01L21/768

CPC classification number: H01L21/76814 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/7688 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/53266

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to seamless metallization structures and methods of manufacture. A structure includes: a contact opening formed in an oxide material and in alignment with an underlying structure; a metal liner lining the sidewalls and bottom of the contact opening, in direct electrical contact with the underlying structure; a conductive liner on the metal liner, within the contact opening; and tungsten fill material on the conductive liner and within the contact opening.

公开(公告)号：US10340183B1

公开(公告)日：2019-07-02

申请号：US15860318

申请日：2018-01-02

Applicant: GLOBALFOUNDRIES INC.

Inventor： Qiang Fang ,  Shafaat Ahmed ,  Zhiguo Sun ,  Jiehui Shu ,  Dinesh R. Koli ,  Wei-Tsu Tseng

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76844 ,  H01L21/76807 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53238

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a cobalt plated via integration scheme and methods of manufacture. The structure includes: a via structure composed of cobalt material; and a wiring structure above the via structure. The wiring structure is lined with a barrier liner and the cobalt material and filled with conductive material.