公开(公告)号：US09577040B2

公开(公告)日：2017-02-21

申请号：US15189079

申请日：2016-06-22

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Peijie Feng ,  Jianwei Peng ,  Yanxiang Liu ,  Shesh Mani Pandey ,  Francis Benistant

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/66 ,  H01L21/265 ,  H01L21/8234 ,  H01L21/268 ,  H01L29/10 ,  H01L29/161 ,  H01L29/167 ,  H01L29/417 ,  H01L21/324 ,  H01L29/165

CPC classification number: H01L29/0847 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/268 ,  H01L21/324 ,  H01L21/823418 ,  H01L21/823431 ,  H01L29/105 ,  H01L29/161 ,  H01L29/165 ,  H01L29/167 ,  H01L29/41725 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851

Abstract: A method of forming a source/drain region with an abrupt, vertical and conformal junction and the resulting device are disclosed. Embodiments include forming a gate electrode over and perpendicular to a semiconductor fin; forming first spacers on opposite sides of the gate electrode; forming second spacers on opposite sides of the fin; forming a cavity in the fin adjacent the first spacers, between the second spacers; partially epitaxially growing source/drain regions in each cavity; implanting a first dopant into the partially grown source/drain regions with an optional RTA thereafter; epitaxially growing a remainder of the source/drain regions in the cavities, in situ doped with a second dopant; and implanting a third dopant in the source/drain regions.

Abstract translation: 公开了一种形成具有突然，垂直和共形结的源极/漏极区域的方法以及所得到的器件。 实施例包括在半导体鳍片上方并垂直于半导体鳍片形成栅电极; 在栅电极的相对侧上形成第一间隔物; 在所述翅片的相对侧上形成第二间隔物; 在第二间隔件之间形成邻近第一间隔件的翅片中的空腔; 在每个腔中部分地外延生长源/漏区; 将第一掺杂剂注入部分生长的源极/漏极区域中，其后可选择的RTA; 在空腔中外延生长源/漏区的剩余部分，原位掺杂有第二掺杂剂; 以及在源极/漏极区域中注入第三掺杂剂。

公开(公告)号：US20170288041A1

公开(公告)日：2017-10-05

申请号：US15091256

申请日：2016-04-05

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Shesh Mani Pandey ,  Baofu Zhu ,  Francis Benistant

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/02 ,  H01L29/06 ,  H01L21/265

CPC classification number: H01L29/66795 ,  H01L21/0217 ,  H01L21/26513 ,  H01L21/26586 ,  H01L29/0649 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/785

Abstract: A method includes forming a fin in a semiconductor substrate. An isolation structure is formed adjacent the fin. A first portion of the fin extends above the isolation structure. A gate electrode is formed above the first portion of the fin. A fin spacer is formed on the first portion of the fin. The fin spacer covers less than 50% of a height of the first portion of the fin. An implantation process is performed in the presence of the fin spacer to form a doped region in the first portion of the fin.

公开(公告)号：US09406752B2

公开(公告)日：2016-08-02

申请号：US14676912

申请日：2015-04-02

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Peijie Feng ,  Jianwei Peng ,  Yanxiang Liu ,  Shesh Mani Pandey ,  Francis Benistant

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/66 ,  H01L29/161 ,  H01L29/167 ,  H01L29/24 ,  H01L21/265 ,  H01L21/324 ,  H01L21/8234

CPC classification number: H01L29/0847 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/268 ,  H01L21/324 ,  H01L21/823418 ,  H01L21/823431 ,  H01L29/105 ,  H01L29/161 ,  H01L29/165 ,  H01L29/167 ,  H01L29/41725 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851

Abstract: A method of forming a source/drain region with an abrupt, vertical and conformal junction and the resulting device are disclosed. Embodiments include forming a gate electrode over and perpendicular to a semiconductor fin; forming first spacers on opposite sides of the gate electrode; forming second spacers on opposite sides of the fin; forming a cavity in the fin adjacent the first spacers, between the second spacers; partially epitaxially growing source/drain regions in each cavity; implanting a first dopant into the partially grown source/drain regions with an optional RTA thereafter; epitaxially growing a remainder of the source/drain regions in the cavities, in situ doped with a second dopant; and implanting a third dopant in the source/drain regions.

Abstract translation: 公开了一种形成具有突然，垂直和共形结的源极/漏极区域的方法以及所得到的器件。 实施例包括在半导体鳍片上方并垂直于半导体鳍片形成栅电极; 在栅电极的相对侧上形成第一间隔物; 在所述翅片的相对侧上形成第二间隔物; 在第二间隔件之间形成邻近第一间隔件的翅片中的空腔; 在每个腔中部分地外延生长源/漏区; 将第一掺杂剂注入部分生长的源极/漏极区域中，其后可选择的RTA; 在空腔中外延生长源/漏区的剩余部分，原位掺杂有第二掺杂剂; 以及在源极/漏极区域中注入第三掺杂剂。

公开(公告)号：US09966433B2

公开(公告)日：2018-05-08

申请号：US15227330

申请日：2016-08-03

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Zhiqing Li ,  Shesh Mani Pandey ,  Francis Benistant

IPC: H01L29/08 ,  H01L21/22 ,  H01L29/167 ,  H01L29/16 ,  H01L21/02 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/0847 ,  H01L21/02532 ,  H01L21/2225 ,  H01L29/1608 ,  H01L29/167 ,  H01L29/66795 ,  H01L29/785

Abstract: A method of forming NFET S/D structures with multiple layers, with consecutive epi-SiP layers being doped at increasing dosages of P and the resulting device are provided. Embodiments include forming multiple epi-Si layers in each S/D cavity of a NFET; and performing in-situ doping of P for each epi-Si layer, wherein consecutive epi-Si layers are doped at increasing dosages of P.

公开(公告)号：US09559176B2

公开(公告)日：2017-01-31

申请号：US15180312

申请日：2016-06-13

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Peijie Feng ,  Yanxiang Liu ,  Shesh Mani Pandey ,  Jianwei Peng ,  Francis Benistant

IPC: H01L29/08 ,  H01L29/417 ,  H01L29/78 ,  H01L29/06 ,  H01L29/45 ,  H01L27/092 ,  H01L21/285 ,  H01L21/324 ,  H01L21/8234

CPC classification number: H01L29/41791 ,  H01L21/02057 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/28512 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/823431 ,  H01L21/823814 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/45 ,  H01L29/785

Abstract: A method of forming a source/drain region with abrupt vertical and conformal junction and the resulting device are disclosed. Embodiments include forming a first mask over a fin of a first polarity FET and source/drain regions of the first polarity FET; forming spacers on opposite sides of a fin of a second polarity FET, the second polarity being opposite the first polarity, on each side of a gate electrode; implanting a first dopant into the fin of the second polarity FET; etching a cavity in the fin of the second polarity FET on each side of the gate electrode; removing the first mask; performing rapid thermal anneal (RTA); epitaxially growing a source/drain region of the second polarity FET in each cavity; forming a second mask over the fin of the first polarity FET and source/drain regions of the first polarity FET; and implanting a second dopant in the source/drain regions of the second polarity FET.

Abstract translation: 公开了一种形成具有突然垂直和共形结的源极/漏极区域的方法以及所得到的器件。 实施例包括在第一极性FET的鳍片和第一极性FET的源极/漏极区域上形成第一掩模; 在栅电极的每一侧上在第二极性FET的鳍的相对侧上形成间隔物，第二极性与第一极性相反; 将第一掺杂剂注入到第二极性FET的鳍中; 在栅电极的每一侧蚀刻第二极性FET的鳍的空腔; 去除第一个面罩; 进行快速热退火（RTA）; 在每个空腔中外延生长第二极性FET的源极/漏极区域; 在第一极性FET的鳍片和第一极性FET的源极/漏极区域上形成第二掩模; 以及在所述第二极性FET的源极/漏极区域中注入第二掺杂剂。

公开(公告)号：US09397162B1

公开(公告)日：2016-07-19

申请号：US14679074

申请日：2015-04-06

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Peijie Feng ,  Yanxiang Liu ,  Shesh Mani Pandey ,  Jianwei Peng ,  Francis Benistant

IPC: H01L21/82 ,  H01L29/08 ,  H01L21/8238 ,  H01L21/265 ,  H01L21/324 ,  H01L21/3065 ,  H01L21/02 ,  H01L27/092 ,  H01L29/24

CPC classification number: H01L29/41791 ,  H01L21/02057 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/28512 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/823431 ,  H01L21/823814 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/45 ,  H01L29/785

Abstract: A method of forming a source/drain region with abrupt vertical and conformal junction and the resulting device are disclosed. Embodiments include forming a first mask over a fin of a first polarity FET and source/drain regions of the first polarity FET; forming spacers on opposite sides of a fin of a second polarity FET, the second polarity being opposite the first polarity, on each side of a gate electrode; implanting a first dopant into the fin of the second polarity FET; etching a cavity in the fin of the second polarity FET on each side of the gate electrode; removing the first mask; performing rapid thermal anneal (RTA); epitaxially growing a source/drain region of the second polarity FET in each cavity; forming a second mask over the fin of the first polarity FET and source/drain regions of the first polarity FET; and implanting a second dopant in the source/drain regions of the second polarity FET.

Abstract translation: 公开了一种形成具有突然垂直和共形结的源极/漏极区域的方法以及所得到的器件。 实施例包括在第一极性FET的鳍片和第一极性FET的源极/漏极区域上形成第一掩模; 在栅电极的每一侧上在第二极性FET的鳍的相对侧上形成间隔物，第二极性与第一极性相反; 将第一掺杂剂注入到第二极性FET的鳍中; 在栅电极的每一侧蚀刻第二极性FET的鳍的空腔; 去除第一个面罩; 进行快速热退火（RTA）; 在每个空腔中外延生长第二极性FET的源极/漏极区域; 在第一极性FET的鳍片和第一极性FET的源极/漏极区域上形成第二掩模; 以及在所述第二极性FET的源极/漏极区域中注入第二掺杂剂。