公开(公告)号：US09335368B1

公开(公告)日：2016-05-10

申请号：US14525596

申请日：2014-10-28

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Luigi Pantisano ,  Premachandran Chirayarikathuveedu ,  Rakesh Ranjan ,  Anil Kumar

IPC: G01R31/28 ,  H05K1/02 ,  H05K1/03 ,  H05K1/11 ,  H05K1/18 ,  H05K3/40 ,  G01R31/26

CPC classification number: G01R31/2851 ,  H01L22/14 ,  H01L22/34 ,  H01L23/345 ,  H01L23/481 ,  H01L2224/13 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A device and method to control the heating of an IC chip in a wafer form for measuring various parameters associated therewith are provided. Embodiments include a device having a silicon layer with an upper surface, and on a plastic carrier; a plurality of devices in the silicon layer and electrically coupled through the upper surface to a test control system; a through silicon via (TSV) extending into the silicon layer; and a parallel heating structure adjacent to the plurality of devices electrically coupled to the test control system.

Abstract translation: 提供了一种用于控制用于测量与其相关的各种参数的晶片形式的IC芯片的加热的装置和方法。 实施例包括具有上表面的硅层和在塑料载体上的装置; 硅层中的多个器件，并通过上表面电耦合到测试控制系统; 通过硅通孔（TSV）延伸到硅层; 以及与所述多个装置相邻的并联加热结构，所述多个装置电耦合到所述测试控制系统。

公开(公告)号：US20190157157A1

公开(公告)日：2019-05-23

申请号：US15821684

申请日：2017-11-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： Shahab Siddiqui ,  Beth Baumert ,  Abu Naser M. Zainuddin ,  Luigi Pantisano

IPC: H01L21/8234 ,  H01L21/02 ,  H01L21/28 ,  H01L27/088 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L21/311 ,  C23C16/50 ,  C23C16/455

Abstract: At least one method, apparatus and system are provided for forming a hybrid oxide layer for providing for a first region of a finFET device to operate at a first voltage and a second region of the finFET to operate at a second voltage. A first set of fins are formed on an I/O device portion, and a second set of fins are formed on a core device portion of a substrate. A first and a second oxide layers are deposited on the first and second set of fins, wherein they merge to form a hybrid oxide layer. The thickness of the second oxide layer is based on a first operating voltage for the I/O device portion. The hybrid layer is removed from the core device portion such that the I/O device portion operates at the first voltage and the core device portion operates at a second voltage.

公开(公告)号：US10438853B2

公开(公告)日：2019-10-08

申请号：US15821684

申请日：2017-11-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： Shahab Siddiqui ,  Beth Baumert ,  Abu Naser M. Zainuddin ,  Luigi Pantisano

IPC: H01L21/8234 ,  C23C16/455 ,  H01L21/02 ,  H01L21/28 ,  H01L27/088 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L21/311 ,  C23C16/50

Abstract: At least one method, apparatus and system are provided for forming a hybrid oxide layer for providing for a first region of a finFET device to operate at a first voltage and a second region of the finFET to operate at a second voltage. A first set of fins are formed on an I/O device portion, and a second set of fins are formed on a core device portion of a substrate. A first and a second oxide layers are deposited on the first and second set of fins, wherein they merge to form a hybrid oxide layer. The thickness of the second oxide layer is based on a first operating voltage for the I/O device portion. The hybrid layer is removed from the core device portion such that the I/O device portion operates at the first voltage and the core device portion operates at a second voltage.