公开(公告)号：US20160284540A1

公开(公告)日：2016-09-29

申请号：US14666787

申请日：2015-03-24

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Shishir RAY ,  Yiqun LIU ,  Jin Ping LIU ,  Fabio D'ADDAMIO ,  Sandeep GAAN

IPC: H01L21/02 ,  H01L29/06 ,  H01L29/12

CPC classification number: H01L21/02181 ,  C23C16/308 ,  G11C11/22 ,  H01L21/02189 ,  H01L21/0234 ,  H01L21/28185 ,  H01L21/28194 ,  H01L29/513 ,  H01L29/517

Abstract: Provided is a semiconductor device that includes a semiconductor substrate and a 10 to 40 Å thick high-k dielectric layer that contains one or both of hafnium dioxide (HfO2) and zirconium dioxide (ZrO2). The high-k dielectric layer is disposed on the semiconductor substrate, and it contains at least some tetragonal phase HfO2 and/or tetragonal phase ZrO2. Also provided are methods for making the semiconductor device, and electronic devices that employ the semiconductor device.

Abstract translation: 提供了一种半导体器件，其包括半导体衬底和包含二氧化铪（HfO 2）和二氧化锆（ZrO 2）中的一种或两者的10至40厚的高k电介质层。 高k电介质层设置在半导体衬底上，并且其包含至少一些四方相HfO 2和/或四方相ZrO 2。 还提供了制造半导体器件的方法以及采用该半导体器件的电子器件。

公开(公告)号：US20160225852A1

公开(公告)日：2016-08-04

申请号：US14609504

申请日：2015-01-30

Applicant: GLOBALFOUNDRIES INC.

Inventor： Shishir RAY ,  Bharat KRISHNAN ,  Min-hwa CHI

IPC: H01L29/08 ,  H01L21/268 ,  H01L21/324 ,  H01L29/04 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/0847 ,  H01L21/268 ,  H01L21/3247 ,  H01L29/045 ,  H01L29/165 ,  H01L29/41775 ,  H01L29/66568 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7847 ,  H01L29/7848

Abstract: Methods are providing for fabricating transistors having at least one source region or drain region with a stressed portion. The methods include: forming, within a cavity of a substrate structure, the at least one source region or drain region with the internal stress; and resurfacing the at least one source region or drain region to reduce surface defects of the at least one source region or drain region without relaxing the stressed portion thereof. For instance, the resurfacing can include melting an upper portion of the at least one source region or drain region. In addition, the resurfacing can include re-crystallizing an upper portion of the at least one source region or drain region, and/or providing the at least one source region or drain region with at least one {111} surface.

Abstract translation: 提供制造具有至少一个具有应力部分的源极区或漏极区的晶体管的方法。 所述方法包括：在衬底结构的空腔内形成具有内部应力的至少一个源极区域或漏极区域; 以及重新铺展所述至少一个源极区域或漏极区域以减少所述至少一个源极区域或漏极区域的表面缺陷，而不放松其应力部分。 例如，表面重排可以包括熔化至少一个源区或漏区的上部。 另外，重新表面可以包括重新结晶至少一个源区或漏区的上部，和/或向至少一个源区或漏区提供至少一个{111}表面。