公开(公告)号：US09508560B1

公开(公告)日：2016-11-29

申请号：US14743511

申请日：2015-06-18

Applicant: International Business Machines Corporation ,  GLOBALFOUNDRIES Inc. ,  STMicroelectronics, Inc.

Inventor： Yann Mignot ,  Brown C. Peethala ,  Shariq Siddiqui

IPC: H01L21/311 ,  H01L21/033 ,  H01L21/027

CPC classification number: H01L21/31116 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/3115 ,  H01L21/76816

Abstract: A method that allows effective removal of a silicon-containing antireflective coating (SiARC) layer in a block mask after defining an unblock area in a sidewall image transfer (SIT) patterning process without causing a height loss of the SIT spacers is provided. The method includes first modifying the SiARC layer with a dry etch utilizing an etching gas comprising a nitrogen gas followed by treating the modified SiARC layer with a wet chemical etch utilizing an aqueous solution including dilute hydrofluoric acid and citric acid.

Abstract translation: 提供一种在限制了侧壁图像转印（SIT）图案化工艺中的未封闭区域而不引起SIT间隔物的高度损失之前有效去除块掩模中的含硅抗反射涂层（SiARC）层的方法。 该方法包括首先利用包含氮气的蚀刻气体进行干法蚀刻来修饰SiARC层，然后利用包含稀氢氟酸和柠檬酸的水溶液进行湿化学蚀刻来处理改性的SiARC层。

公开(公告)号：US09576852B2

公开(公告)日：2017-02-21

申请号：US14751380

申请日：2015-06-26

Applicant: GLOBALFOUNDRIES, INC. ,  STMicroelectronics, Inc. ,  International Business Machines Corporation

Inventor： Ming He ,  Seowoo Nam ,  Yann Mignot ,  Jim Kelly ,  Raghuveer Patlotta ,  Theodorus Standaert

IPC: H01L21/76 ,  H01L21/768 ,  H01L21/02 ,  H01L23/528

CPC classification number: H01L21/76897 ,  H01L21/0217 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76877 ,  H01L21/76883 ,  H01L21/76885 ,  H01L23/528

Abstract: Integrated circuits and methods for producing the same are provided. A method for producing an integrated circuit includes forming an interconnect in a first interlayer dielectric. A first cap is formed overlying the first interlayer dielectric adjacent to the interconnect, and a second interlayer dielectric is formed overlying the first interlayer dielectric, the interconnect, and the cap. A contact is formed through the second interlayer dielectric, where the contact includes an overlap region and a connection region. The overlap region directly overlies the first interlayer dielectric adjacent to the interconnect, and the connection region directly contacts the interconnect. The first cap is positioned between the overlap region and the first interlayer dielectric.

Abstract translation: 提供了集成电路及其制造方法。 一种用于制造集成电路的方法包括在第一层间电介质中形成互连。 第一盖形成在与互连件相邻的第一层间电介质上，并且形成覆盖第一层间电介质，互连和盖的第二层间电介质。 通过第二层间电介质形成触点，其中触点包括重叠区域和连接区域。 重叠区域直接覆盖与互连件相邻的第一层间电介质，并且连接区域直接接触互连。 第一盖位于重叠区域和第一层间电介质之间。

公开(公告)号：US09984919B1

公开(公告)日：2018-05-29

申请号：US15664584

申请日：2017-07-31

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Xunyuan Zhang ,  Chanro Park ,  Yongan Xu ,  Peng Xu ,  Yann Mignot

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L21/76807 ,  H01L21/76813 ,  H01L21/76831 ,  H01L21/76877 ,  H01L21/76885 ,  H01L21/76897 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53228 ,  H01L23/53295

Abstract: Interconnect structures and methods of fabricating an interconnect structure. A first section of a mandrel is covered with a feature of an etch mask. A top surface of a second section of the mandrel is exposed by the feature of the etch mask and is recessed with an etching process. A conductive via is formed that reproduces a shape of the first section of the mandrel, and a conductive line is formed that reproduces a shape of the second section of the mandrel. The mandrel is removed to release the conductive via and the conductive line.

公开(公告)号：US20160379881A1

公开(公告)日：2016-12-29

申请号：US14751380

申请日：2015-06-26

Applicant: GLOBALFOUNDRIES, INC. ,  STMicroelectronics, Inc. ,  International Business Machines Corporation

Inventor： Ming He ,  Seowoo Nam ,  Yann Mignot ,  Jim Kelly ,  Raghuveer Patlotta ,  Theodorus Standaert

IPC: H01L21/768 ,  H01L23/528 ,  H01L21/02

CPC classification number: H01L21/76897 ,  H01L21/0217 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76877 ,  H01L21/76883 ,  H01L21/76885 ,  H01L23/528

Abstract: Integrated circuits and methods for producing the same are provided. A method for producing an integrated circuit includes forming an interconnect in a first interlayer dielectric. A first cap is formed overlying the first interlayer dielectric adjacent to the interconnect, and a second interlayer dielectric is formed overlying the first interlayer dielectric, the interconnect, and the cap. A contact is formed through the second interlayer dielectric, where the contact includes an overlap region and a connection region. The overlap region directly overlies the first interlayer dielectric adjacent to the interconnect, and the connection region directly contacts the interconnect. The first cap is positioned between the overlap region and the first interlayer dielectric.

Abstract translation: 提供了集成电路及其制造方法。 一种用于制造集成电路的方法包括在第一层间电介质中形成互连。 第一盖形成在与互连件相邻的第一层间电介质上，并且形成覆盖第一层间电介质，互连和盖的第二层间电介质。 通过第二层间电介质形成触点，其中触点包括重叠区域和连接区域。 重叠区域直接覆盖与互连件相邻的第一层间电介质，并且连接区域直接接触互连。 第一盖位于重叠区域和第一层间电介质之间。

公开(公告)号：US20160372334A1

公开(公告)日：2016-12-22

申请号：US14743511

申请日：2015-06-18

Applicant: International Business Machines Corporation ,  GLOBALFOUNDRIES Inc. ,  STMicroelectronics, Inc.

Inventor： Yann Mignot ,  Brown C. Peethala ,  Shariq Siddiqui

IPC: H01L21/311 ,  H01L21/027 ,  H01L21/033

CPC classification number: H01L21/31116 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/3115 ,  H01L21/76816

Abstract: A method that allows effective removal of a silicon-containing antireflective coating (SiARC) layer in a block mask after defining an unblock area in a sidewall image transfer (SIT) patterning process without causing a height loss of the SIT spacers is provided. The method includes first modifying the SiARC layer with a dry etch utilizing an etching gas comprising a nitrogen gas followed by treating the modified SiARC layer with a wet chemical etch utilizing an aqueous solution including dilute hydrofluoric acid and citric acid.

Abstract translation: 提供一种在限制了侧壁图像转印（SIT）图案化工艺中的未封闭区域而不引起SIT间隔物的高度损失之前有效去除块掩模中的含硅抗反射涂层（SiARC）层的方法。 该方法包括首先利用包含氮气的蚀刻气体进行干法蚀刻来修饰SiARC层，然后利用包含稀氢氟酸和柠檬酸的水溶液进行湿化学蚀刻来处理改性的SiARC层。