公开(公告)号：US20240186441A1

公开(公告)日：2024-06-06

申请号：US18075908

申请日：2022-12-06

Applicant: GlobalFoundries U.S. Inc.

Inventor： Alexander M. DERRICKSON ,  Uppili S. RAGHUNATHAN ,  Vibhor JAIN ,  Yusheng BIAN ,  Judson R. HOLT

IPC: H01L31/11 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/18

CPC classification number: H01L31/1105 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/1808

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to lateral phototransistors and methods of manufacture. The structure includes a lateral bipolar transistor; and a T-shaped photosensitive structure vertically above an intrinsic base of the lateral bipolar transistor.

公开(公告)号：US20230231041A1

公开(公告)日：2023-07-20

申请号：US17580127

申请日：2022-01-20

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Shesh Mani PANDEY ,  Alexander M. DERRICKSON ,  Judson R. HOLT ,  Vibhor JAIN

IPC: H01L29/737 ,  H01L29/66 ,  H01L29/08 ,  H01L29/423 ,  H01L29/10 ,  H01L29/417

CPC classification number: H01L29/7371 ,  H01L29/66234 ,  H01L29/0821 ,  H01L29/42304 ,  H01L29/1004 ,  H01L29/41708

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to vertical bipolar transistors and methods of manufacture. The structure includes: an intrinsic base region comprising semiconductor-on-insulator material; a collector region confined within an insulator layer beneath the semiconductor-on-insulator material; an emitter region above the intrinsic base region; and an extrinsic base region above the intrinsic base region.

公开(公告)号：US20250098190A1

公开(公告)日：2025-03-20

申请号：US18368412

申请日：2023-09-14

Applicant: GlobalFoundries U.S. Inc.

Inventor： Alexander M. DERRICKSON ,  Kaustubh SHANBHAG ,  Vibhor JAIN ,  Judson R. HOLT

IPC: H01L29/737 ,  H01L29/201 ,  H01L29/66

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to bipolar transistors and methods of manufacture. The structure includes: a collector; a base region above the collector; an emitter laterally connecting to the base region; and an extrinsic base connecting to the base region.