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    Electrostatic discharge devices
    1.
    发明授权
    Electrostatic discharge devices 有权

    公开(公告)号：US11855074B2

    公开(公告)日：2023-12-26

    申请号：US17170325

    申请日：2021-02-08

    Applicant: GLOBALFOUNDRIES U.S. Inc.

    Inventor： Zhiqing Li ,  William J. Taylor, Jr. ,  Anindya Nath

    IPC: H01L27/02

    CPC classification number: H01L27/0262

    Abstract: The present disclosure relates to semiconductor structures and, more particularly, to electrostatic discharge devices and methods of manufacture. The structure includes: a plurality of regions of a first dopant type; insulator material separating each region of the plurality of regions of the first dopant type; and a substrate contacting the plurality of regions of the first dopant type, the substrate comprising a base region of a second dopant type different than the first dopant type and an outer segment surrounding the plurality of regions of the first dopant type, the outer segment comprises an electrical resistivity higher than the second dopant type.

    On-chip heater with a heating element that locally generates different amounts of heat and methods
    3.
    发明授权
    On-chip heater with a heating element that locally generates different amounts of heat and methods 有权

    公开(公告)号：US11543604B2

    公开(公告)日：2023-01-03

    申请号：US17223059

    申请日：2021-04-06

    Applicant: GLOBALFOUNDRIES U.S. Inc.

    Inventor： William J. Taylor, Jr.

    IPC: G02B6/42

    Abstract: Disclosed is a chip structure that includes heater. The heater includes a heating element with a first end and a second end and, between the first and second ends, different portions with different cross-sectional areas. The heating element further includes first and second terminals at the first and second ends, respectively. Current flowing through the heating element between the first and second terminals causes the heating element to generate heat. However, due to the different cross-sectional areas of the different portions, the current densities through those different portions are different and, thus, the different portions of the heating element generate different amounts of heat per unit length. The heating element can be designed and placed on-chip to facilitate local thermal tuning of different regions of a device or of different devices without requiring multiple different heating elements within a relatively small chip area. Also disclosed is an associated method.

    Structure providing charge controlled electronic fuse
    5.
    发明授权
    Structure providing charge controlled electronic fuse 有权

    公开(公告)号：US11387353B2

    公开(公告)日：2022-07-12

    申请号：US16907600

    申请日：2020-06-22

    Applicant: GLOBALFOUNDRIES U.S. Inc.

    Inventor： Jagar Singh ,  Sudarshan Narayanan ,  Alvin J. Joseph ,  William J. Taylor, Jr. ,  Jeffrey B. Johnson

    IPC: H01L29/68 ,  H01L29/08 ,  H01L29/06 ,  H01L29/10 ,  H01L27/112

    Abstract: A structure includes a first source/drain region and a second source/drain region in a semiconductor body; and a trench isolation between the first and second source/drain regions in the semiconductor body. A first doping region is about the first source/drain region, a second doping region about the second source/drain region, and the trench isolation is within the second doping region. A third doping region is adjacent to the first doping region and extend partially into the second doping region to create a charge trap section. A gate conductor of a gate structure is over the trench isolation and the first, second, and third doping regions. The charge trap section creates a charge controlled e-fuse operable by applying a stress voltage to the gate conductor.

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