公开(公告)号：US20190198297A1

公开(公告)日：2019-06-27

申请号：US16111796

申请日：2018-08-24

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Tooru ARAMAKI ,  Kenetsu YOKOGAWA

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  H01L21/3065

Abstract: The reliability of a plasma processing apparatus can be improved, and the yield of plasma processing can be improved. A plasma etching apparatus 100 has a susceptor ring 113 covering the surface of a sample stage, a conductor ring 131 disposed in the interior of the susceptor ring 113 and to which second high frequency electric power is supplied from a second high frequency power source, and an electric power supply connector 161 configuring a path for supplying the second high frequency electric power to the conductor ring 131. Further, the electric power supply connector 161 includes a plate spring 135 disposed in the interior of an insulating boss 144 disposed in a through hole 120c of the sample stage and having resiliency in such a manner that the plate spring 135 is connected to an upper terminal 143 and a lower terminal 145, is biased in an up-down direction P, and is expanded and contracted.

公开(公告)号：US20160351404A1

公开(公告)日：2016-12-01

申请号：US15057157

申请日：2016-03-01

Applicant: Hitachi High-Technologies Corporation

Inventor： Tooru ARAMAKI ,  Kenetsu YOKOGAWA ,  Masaru IZAWA

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32183 ,  H01J37/32192 ,  H01J37/32577 ,  H01J37/32715 ,  H01L21/31116

Abstract: A plasma processing apparatus or a plasma processing method that processes a wafer to be processed, which is placed on a surface of a sample stage arranged in a processing chamber inside a vacuum container, using a plasma formed in the processing chamber, the apparatus or method including processing the wafer by adjusting a first high-frequency power to be supplied to a first electrode arranged inside the sample stage and a second high-frequency power to be supplied, via a resonant circuit, to a second electrode which is arranged in an inner side of a ring-shaped member made of a dielectric arranged on an outer peripheral side of a surface of the sample stage on which the wafer is placed, during the processing.

Abstract translation: 一种等离子体处理装置或等离子体处理方法，其使用处理室中形成的等离子体处理放置在真空容器内的处理室中的样品台的表面上的被处理晶片，该装置或方法 包括通过调节要供给到布置在所述样品台内部的第一电极的第一高频功率和经由谐振电路将待提供的第二高频功率来施加到所述晶片的第二电极，所述第二电极布置在内部 在处理期间在布置在其上放置晶片的样品台的表面的外周侧上的由电介质制成的环形构件的侧面。

公开(公告)号：US20190122864A1

公开(公告)日：2019-04-25

申请号：US16228934

申请日：2018-12-21

Applicant: Hitachi High-Technologies Corporation

Inventor： Tooru ARAMAKI ,  Kenetsu YOKOGAWA ,  Masaru IZAWA

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32192 ,  H01J37/32577 ,  H01J37/32715 ,  H01L21/31116

Abstract: A plasma processing apparatus or a plasma processing method that processes a wafer to be processed, which is placed on a surface of a sample stage arranged in a processing chamber inside a vacuum container, using a plasma formed in the processing chamber, the apparatus or method including processing the wafer by adjusting a first high-frequency power to be supplied to a first electrode arranged inside the sample stage and a second high-frequency power to be supplied, via a resonant circuit, to a second electrode which is arranged in an inner side of a ring-shaped member made of a dielectric arranged on an outer peripheral side of a surface of the sample stage on which the wafer is placed, during the processing.

公开(公告)号：US20170011890A1

公开(公告)日：2017-01-12

申请号：US15204183

申请日：2016-07-07

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Tooru ARAMAKI ,  Kenetsu YOKOGAWA ,  Masaru IZAWA

IPC: H01J37/32 ,  C23C16/46 ,  C23C16/50

CPC classification number: H01J37/32532 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/463 ,  C23C16/511 ,  H01J37/32009 ,  H01J37/32192 ,  H01J37/32522 ,  H01J37/32715 ,  H01J37/32724

Abstract: A plasma processing device that includes a processing chamber which is disposed in a vacuum vessel and is decompressed internally, a sample stage which is disposed in the processing chamber and on which a sample of a process target is disposed and held, and a plasma formation unit which forms plasma using process gas and processes the sample using the plasma, and the plasma processing device includes: a dielectric film which is disposed on a metallic base configuring the sample stage and connected to a ground and includes a film-like electrode supplied with high-frequency power internally; a plurality of elements which are disposed in a space in the base and have a heat generation or cooling function; and a feeding path which supplies power to the plurality of elements, wherein a filter to suppress a high frequency is not provided on the feeding path.

Abstract translation: 一种等离子体处理装置，其包括设置在真空容器中并在内部减压的处理室，设置在处理室中并且处理对象的样品被放置并保持在其上的样品台，以及等离子体形成单元 其使用处理气体形成等离子体，并且使用等离子体处理样品，并且等离子体处理装置包括：电介质膜，其设置在构成样品台并连接到地面的金属基底上，并且包括提供高的膜状电极 内部电力供电; 多个元件，其设置在基座中的空间中并具有发热或冷却功能; 以及向多个元件供电的馈送路径，其中在馈送路径上不设置用于抑制高频的滤波器。

公开(公告)号：US20160079107A1

公开(公告)日：2016-03-17

申请号：US14626911

申请日：2015-02-19

Applicant: Hitachi High-Technologies Corporation

Inventor： Tooru ARAMAKI ,  Michikazu MORIMOTO ,  Kenetsu YOKOGAWA

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/6833 ,  H01J37/32174 ,  H01J37/32577 ,  H01J37/32715

Abstract: In a plasma processing apparatus, a connector section with the film-like electrode of a sintered plate of a sample stage to which high-frequency power is supplied includes a conductor section disposed inside a through hole, an upper part of which is bonded to the film-like electrode and a lower part of which is connected to an end of a power supply path of the high-frequency power, and a boss disposed between the conductor section and a substrate surrounding an outer periphery of the conductor section inside the through hole and made of an insulating material. Upper ends of a rod-like member at the center of the conductor section and a socket surrounding the rod-like member are disposed at a position higher than the boss, and an adhesive is prevented from entering between the socket and the rod-like member in the upper end of the socket.

Abstract translation: 在等离子体处理装置中，具有被提供高频电力的样品台的烧结板的膜状电极的连接器部分包括布置在通孔内部的导体部分，其中上部部分结合到 薄膜状电极，其下部连接到高频电源的电源路径的端部，以及设置在导体部分和围绕导体部分的通孔内部的基板之间的凸台 并由绝缘材料制成。 位于导体部分中心的棒状部件的上端和围绕杆状部件的插座设置在高于凸台的位置，并且防止粘合剂进入插座和棒状部件之间 在插座的上端。