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    Method and apparatus for enhancing thermal stability, improving biasing and reducing damage from electrostatic discharge in self-pinned abutted junction heads having a first self-pinned layer extending under the hard bias layers
    6.
    发明申请
    Method and apparatus for enhancing thermal stability, improving biasing and reducing damage from electrostatic discharge in self-pinned abutted junction heads having a first self-pinned layer extending under the hard bias layers 失效
    用于增强热稳定性的方法和装置，改​​善偏压并且减少在具有在硬偏压层下延伸的第一自固位层的自固定邻接接头中的静电放电的损伤

    公开(公告)号：US20050024786A1

    公开(公告)日：2005-02-03

    申请号：US10629535

    申请日：2003-07-29

    申请人： Hardayal Gill ,  Wen-Chien Hsiao ,  Jih-Shiuan Luo

    发明人： Hardayal Gill ,  Wen-Chien Hsiao ,  Jih-Shiuan Luo

    IPC分类号： G11B5/127 ,  G11B5/33 ,  G11B5/39 ,  H01F10/32 ,  H01F41/30

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3903 ,  G11B5/3932 ,  H01F10/3281 ,  H01F41/302

    摘要： A method and apparatus for enhancing thermal stability, improving biasing and reducing damage from electrical surges in self-pinned abutted junction heads. A first self-pinned layer having a first magnetic orientation is provided, wherein the first self-pinned layer has a first end, a second end and central portion. A second self-pinned layer is formed over only the central portion of the first self-pinned layer and an interlayer is disposed between the first and second self-pinned layers. A free layer is formed in a central region over the second self-pinned layer. First and second hard bias layers are formed over the first and second ends of the first self-pinned layer respectively, the first and second hard bias layer abutting the free layer, the first and second end of the first self-pinned layer extending under the hard bias layers at the first and second ends.

    摘要翻译： 一种用于增强热稳定性，改善偏压并减少自销接合接头中的电涌的损伤的方法和装置。 提供了具有第一磁性取向的第一自固位层，其中第一自固位层具有第一端，第二端和中心部分。 仅在第一自被钉扎层的中心部分上形成第二自固位层，并且中间层设置在第一和第二自固位层之间。 在第二自固位层上的中心区域形成自由层。 第一和第二硬偏压层分别形成在第一自固位层的第一和第二端上，第一和第二硬偏置层邻接自由层，第一自固位层的第一和第二端延伸在 在第一和第二端的硬偏压层。

    Method and apparatus for enhancing thermal stability, improving biasing and reducing damage from electrostatic discharge in self-pinned abutted junction heads having self-pinned layer extending under the hard bias layers
    7.
    发明申请
    Method and apparatus for enhancing thermal stability, improving biasing and reducing damage from electrostatic discharge in self-pinned abutted junction heads having self-pinned layer extending under the hard bias layers 失效
    用于增强热稳定性的方法和装置，改​​善偏压并减少在具有在硬偏压层下延伸的自固位层的自固定邻接接头中的静电放电的损伤

    公开(公告)号：US20050024783A1

    公开(公告)日：2005-02-03

    申请号：US10629319

    申请日：2003-07-29

    申请人： Hardayal Gill ,  Wen-Chien Hsiao ,  Jih-Shiuan Luo

    发明人： Hardayal Gill ,  Wen-Chien Hsiao ,  Jih-Shiuan Luo

    IPC分类号： G11B5/31 ,  G11B5/33 ,  G11B5/127

    CPC分类号： G11B5/31

    摘要： A method and apparatus for enhancing thermal stability, improving biasing and reducing damage from electrical surges in self-pinned abutted junction heads. The head includes a self-pinned layer, the self-pinned layer having a first end, a second end and central portion, a free layer disposed over the central portion of the self-pinned layer in a central region and a first and second hard bias layers formed over the first and second ends of the self-pinned layer respectively, the first and second hard bias layer abutting the free layer, the first and second end of the self-pinned layer extending under the hard bias layers at the first and second ends.

    摘要翻译： 一种用于增强热稳定性，改善偏压并减少自销接合接头中的电涌的损伤的方法和装置。 头部包括自固位层，自固位层具有第一端，第二端和中心部分，自由层设置在中心区域中的自固位层的中心部分上，第一和第二硬 偏置层分别形成在自固位层的第一和第二端上，第一和第二硬偏置层邻接自由层，自固位层的第一和第二端在第一和第二硬质偏压层的下面延伸， 第二端

    Dual-type tunneling magnetoresistance (TMR) elements
    8.
    发明申请
    Dual-type tunneling magnetoresistance (TMR) elements 失效
    双路隧道磁阻（TMR）元件

    公开(公告)号：US20070230068A1

    公开(公告)日：2007-10-04

    申请号：US11395301

    申请日：2006-03-31

    申请人： Hardayal Gill

    发明人： Hardayal Gill

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3903 ,  G11B2005/0018 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3272 ,  H01F41/302

    摘要： Dual-type tunneling magnetoresistance (TMR) elements and associated methods of fabrication are disclosed that allow for higher bias voltages. In one embodiment, the dual-type TMR element includes a lower pinned layer structure, a lower tunnel barrier layer, a ferromagnetic free layer structure, an upper tunnel barrier layer, and an upper pinned layer structure. The lower pinned layer structure has a first Fermi level, while the upper pinned layer structure has a second Fermi level that is different than the first Fermi level of the lower pinned layer structure. By having different Fermi levels, the bias voltage induced in the TMR element may advantageously be increased without a significant reduction in TMR.

    摘要翻译： 公开了双型隧道磁阻（TMR）元件和相关的制造方法，其允许更高的偏置电压。 在一个实施例中，双型TMR元件包括下钉扎层结构，下隧道势垒层，铁磁自由层结构，上隧道阻挡层和上钉扎层结构。 下钉扎层结构具有第一费米能级，而上钉扎层结构具有与下钉扎层结构的第一费米能级不同的第二费米能级。 通过具有不同的费米能级，可以有利地增加TMR元件中感应的偏置电压，而不会明显降低TMR。

    Magnetoresistive (MR) elements having pinning layers formed from permanent magnetic material
    9.
    发明申请
    Magnetoresistive (MR) elements having pinning layers formed from permanent magnetic material 失效
    具有由永磁材料形成的钉扎层的磁阻（MR）元件

    公开(公告)号：US20070064352A1

    公开(公告)日：2007-03-22

    申请号：US11230184

    申请日：2005-09-19

    申请人： Hardayal Gill

    发明人： Hardayal Gill

    IPC分类号： G11B5/33

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3932 ,  H01F10/16 ,  H01F10/3263 ,  H01F10/3281 ,  H01F10/3295

    摘要： Magnetoresistive (MR) elements having pinning layers formed from a permanent magnetic material are disclosed. An MR element of the invention includes a first pinning layer, a first pinned layer, a first spacer/barrier layer, a free layer, a second spacer/barrier layer, a second pinned layer, and a second pinning layer. One of the first pinning layer or the second pinning layer is formed from a permanent magnetic material, such as CoPt or CoPtCr. The other of the first pinning layer or the second pinning layer is formed from an antiferromagnetic (AFM) material, such as IrMn or PtMn.

    摘要翻译： 公开了具有由永久磁性材料形成的钉扎层的磁阻（MR）元件。 本发明的MR元件包括第一钉扎层，第一钉扎层，第一间隔物/阻挡层，自由层，第二间隔物/阻挡层，第二钉扎层和第二钉扎层。 第一钉扎层或第二钉扎层中的一个由诸如CoPt或CoPtCr的永久磁性材料形成。 第一钉扎层或第二钉扎层中的另一个由反铁磁（AFM）材料形成，例如IrMn或PtMn。

    Magnetoresistive sensor having an in stack bias structure with NiFeCr spacer layer for improved bias layer pinning
    10.
    发明申请
    Magnetoresistive sensor having an in stack bias structure with NiFeCr spacer layer for improved bias layer pinning 失效
    磁阻传感器具有堆叠偏压结构，具有NiFeCr间隔层，用于改善偏压层钉扎

    公开(公告)号：US20070019342A1

    公开(公告)日：2007-01-25

    申请号：US11187564

    申请日：2005-07-22

    申请人： Hardayal Gill

    发明人： Hardayal Gill

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B2005/3996

    摘要： A magnetoresistive sensor having an in stack bias structure for biasing the magnetic moment of the free layer. The in stack bias structure includes a magnetic bias layer that may include a layer of NiFe and a layer of CoFe. A layer of antiferromagnetic material (AFM layer) is exchange coupled with the bias layer. Preferably, the NiFe layer of the bias layer is located adjacent to the AFM layer. A non-magnetic spacer layer is sandwiched between the free layer and the bias layer. The spacer layer comprises NiFeCr and is of such a thickness that magnetostatic coupling between the free layer and the bias layer across the spacer layer biases the magnetic moment of the free layer in a direction antiparallel to the magnetic moment of the bias layer. The NiFeCr promotes a desired crystalline growth in the bias layer that causes excellent exchange coupling between the bias layer and the AFM layer.

    摘要翻译： 一种磁阻传感器，具有用于偏置自由层的磁矩的堆叠偏压结构。 堆叠偏压结构包括可以包括NiFe层和CoFe层的磁偏置层。 一层反铁磁材料（AFM层）与偏置层交换耦合。 优选地，偏置层的NiFe层位于AFM层附近。 非磁性间隔层被夹在自由层和偏置层之间。 间隔层包括NiFeCr，并且具有这样的厚度，使得自由层与隔离层之间的偏置层之间的静磁耦合在与偏置层的磁矩反平行的方向上偏置自由层的磁矩。 NiFeCr促进偏置层中的期望的晶体生长，导致偏置层和AFM层之间的优异的交换耦合。