COMPOSITE STRUCTURE HAVING A NON-PLANAR INTERFACE AND METHOD OF MAKING SAME
    1.
    发明申请
    COMPOSITE STRUCTURE HAVING A NON-PLANAR INTERFACE AND METHOD OF MAKING SAME 审中-公开
    具有非平面界面的复合结构及其制造方法

    公开(公告)号:US20060237236A1

    公开(公告)日:2006-10-26

    申请号:US10908040

    申请日:2005-04-26

    IPC分类号: E21B10/36

    摘要: A composite structure includes a first portion comprising a first metallic material, a monolayer of particles extending into and bonded with the first portion, and a second portion comprising a second material, the second portion bonded with the monolayer of particles and extending into interstices between the particles. A method for fabricating a composite structure includes bonding a monolayer of particles to a first portion comprising a first metallic material, such that the monolayer of particles extends into the first portion and bonding a second portion comprising a second material to the monolayer of particles, such that the second portion extends into interstices between the particles.

    摘要翻译: 复合结构包括第一部分,第一部分包括第一金属材料,延伸到第一部分中并与第一部分结合的颗粒的单层,以及包括第二材料的第二部分,第二部分与单层颗粒结合并延伸到第二部分之间的间隙 粒子。 一种制造复合结构的方法包括将单层颗粒结合到包括第一金属材料的第一部分,使得单层颗粒延伸到第一部分中并将包含第二材料的第二部分结合到单层颗粒,例如 第二部分延伸到颗粒之间的空隙中。

    In-situ boron doped PDC element
    3.
    发明授权
    In-situ boron doped PDC element 有权
    原位硼掺杂PDC元素

    公开(公告)号:US08997900B2

    公开(公告)日:2015-04-07

    申请号:US12968590

    申请日:2010-12-15

    摘要: A polycrystalline diamond compact formed in an in-situ boron-doped process. The in-situ boron-doped process includes consolidating a mixture of diamond crystals and boron-containing alloy via liquid diffusion of boron into diamond crystals at a pressure greater than 5 Gpa and at a temperature greater than the melting temperature of the boron-containing alloy, typically less than about 1450° C.

    摘要翻译: 在原位硼掺杂工艺中形成的多晶金刚石压块。 原位硼掺杂工艺包括通过硼的液体扩散将金刚石晶体和含硼合金的混合物以大于5Gpa的压力和大于含硼合金的熔融温度的温度固结在金刚石晶体中 通常小于约1450℃

    High Thermal Conductivity Hardfacing
    5.
    发明申请
    High Thermal Conductivity Hardfacing 失效
    高导热性表面处理

    公开(公告)号:US20130020136A1

    公开(公告)日:2013-01-24

    申请号:US13357244

    申请日:2012-01-24

    CPC分类号: C23C4/06 C22C29/08

    摘要: A hardmetal composition comprises tungsten carbide in an amount greater than 50 weight percent of the hardmetal composition. In addition, the hardmetal composition comprises a binder material consisting of at least 90 weight percent nickel, a binder flux between 3.5 to 10.0 weight percent chosen from the group consisting of boron and silicon, and less than 1.0 weight percent other components.

    摘要翻译: 硬质合金组合物包含大于硬质合金组合物的50重量%的量的碳化钨。 此外,硬质合金组合物包括由至少90重量%的镍组成的粘合剂材料,选自硼和硅的3.5至10.0重量%的粘合剂通量和小于1.0重量%的其它组分。

    In-Situ Boron Doped PDC Element
    6.
    发明申请
    In-Situ Boron Doped PDC Element 有权
    原位硼掺杂PDC元素

    公开(公告)号:US20120152622A1

    公开(公告)日:2012-06-21

    申请号:US12968590

    申请日:2010-12-15

    IPC分类号: E21B10/36 B24D3/10

    摘要: A polycrystalline diamond compact formed in an in-situ boron-doped process. The in-situ boron-doped process includes consolidating a mixture of diamond crystals and boron-containing alloy via liquid diffusion of boron into diamond crystals at a pressure greater than 5 Gpa and at a temperature greater than the melting temperature of the boron-containing alloy, typically less than about 1450° C.

    摘要翻译: 在原位硼掺杂工艺中形成的多晶金刚石压块。 原位硼掺杂工艺包括通过硼的液体扩散将金刚石晶体和含硼合金的混合物以大于5Gpa的压力和大于含硼合金的熔融温度的温度固结在金刚石晶体中 通常小于约1450℃