公开(公告)号：US07359412B2

公开(公告)日：2008-04-15

申请号：US10658472

申请日：2003-09-10

申请人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tamae Takano ,  Masaki Koyama ,  Koichiro Tanaka

发明人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tamae Takano ,  Masaki Koyama ,  Koichiro Tanaka

IPC分类号： H01S3/13

CPC分类号： H01S3/131 ,  B23K26/702

摘要： It is an object to provide a laser apparatus, a laser irradiating method and a manufacturing method of a semiconductor device that make laser energy more stable. To attain the object, a part of laser beam emitted from an oscillator is sampled to generate an electric signal that contains as data energy fluctuation of a laser beam. The electric signal is subjected to signal processing to calculate the frequency, amplitude, and phase of the energy fluctuation of the laser beam. The transmittance of a light amount adjusting means is controlled in order that the transmittance changes in antiphase to the phase of the energy fluctuation of the laser beam and with an amplitude capable of reducing the amplitude of laser beam emitted from the oscillator, the control being made based on the phase difference between the phase of a signal that is in synchronization with oscillation of laser beam emitted from the oscillator and the phase calculated, on the energy ratio of the sampled laser beam to laser beam emitted from the oscillator, and on the frequency and amplitude calculated. In the light amount adjusting means, energy of the laser beam oscillated from the oscillator energy is adjusted.

摘要翻译： 本发明的目的是提供使激光能更稳定的半导体器件的激光装置，激光照射方法和制造方法。 为了达到该目的，从振荡器发射的激光束的一部分被采样以产生包含作为激光束的数据能量波动的电信号。 对信号进行信号处理，计算激光束的能量波动的频率，振幅和相位。 控制光量调节装置的透射率，以便透射率与激光束的能量波动的相位相反，并且能够减小从振荡器发射的激光束的振幅的振幅，进行控制 基于与从振荡器发射的激光束的振荡同步的信号的相位与计算的相位之间的相位差相对于从采样的激光束到从振荡器发射的激光束的能量比，以及频率 并计算振幅。 在光量调节装置中，调整从振荡器能量振荡的激光束的能量。

公开(公告)号：US07920611B2

公开(公告)日：2011-04-05

申请号：US12000814

申请日：2007-12-18

申请人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tamae Takano ,  Masaki Koyama ,  Koichiro Tanaka

发明人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tamae Takano ,  Masaki Koyama ,  Koichiro Tanaka

IPC分类号： H01S3/13 ,  H01S3/22

CPC分类号： H01S3/131 ,  B23K26/702

摘要： It is an object to provide a laser apparatus, a laser irradiating method and a manufacturing method of a semiconductor device that make laser energy more stable. To attain the object, a part of laser beam emitted from an oscillator is sampled to generate an electric signal that contains as data energy fluctuation of a laser beam. The electric signal is subjected to signal processing to calculate the frequency, amplitude, and phase of the energy fluctuation of the laser beam. The transmittance of a light amount adjusting means is controlled in order that the transmittance changes in antiphase to the phase of the energy fluctuation of the laser beam and with an amplitude capable of reducing the amplitude of laser beam emitted from the oscillator, the control being made based on the phase difference between the phase of a signal that is in synchronization with oscillation of laser beam emitted from the oscillator and the phase calculated, on the energy ratio of the sampled laser beam to laser beam emitted from the oscillator, and on the frequency and amplitude calculated. In the light amount adjusting means, energy of the laser beam oscillated from the oscillator energy is adjusted.

摘要翻译： 本发明的目的是提供使激光能更稳定的半导体器件的激光装置，激光照射方法和制造方法。 为了达到该目的，从振荡器发射的激光束的一部分被采样以产生包含作为激光束的数据能量波动的电信号。 对信号进行信号处理，计算激光束的能量波动的频率，振幅和相位。 控制光量调节装置的透射率，以便透射率与激光束的能量波动的相位相反，并且能够减小从振荡器发射的激光束的振幅的振幅，进行控制 基于与从振荡器发射的激光束的振荡同步的信号的相位与计算的相位之间的相位差相对于从采样的激光束到从振荡器发射的激光束的能量比，以及频率 并计算振幅。 在光量调节装置中，调整从振荡器能量振荡的激光束的能量。

公开(公告)号：US20090016393A1

公开(公告)日：2009-01-15

申请号：US12000814

申请日：2007-12-18

申请人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tamae Takano ,  Masaki Koyama ,  Koichiro Tanaka

发明人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tamae Takano ,  Masaki Koyama ,  Koichiro Tanaka

IPC分类号： H01S3/22 ,  H01S3/00

CPC分类号： H01S3/131 ,  B23K26/702

摘要： It is an object to provide a laser apparatus, a laser irradiating method and a manufacturing method of a semiconductor device that make laser energy more stable. To attain the object, a part of laser beam emitted from an oscillator is sampled to generate an electric signal that contains as data energy fluctuation of a laser beam. The electric signal is subjected to signal processing to calculate the frequency, amplitude, and phase of the energy fluctuation of the laser beam. The transmittance of a light amount adjusting means is controlled in order that the transmittance changes in antiphase to the phase of the energy fluctuation of the laser beam and with an amplitude capable of reducing the amplitude of laser beam emitted from the oscillator, the control being made based on the phase difference between the phase of a signal that is in synchronization with oscillation of laser beam emitted from the oscillator and the phase calculated, on the energy ratio of the sampled laser beam to laser beam emitted from the oscillator, and on the frequency and amplitude calculated. In the light amount adjusting means, energy of the laser beam oscillated from the oscillator energy is adjusted.

摘要翻译： 本发明的目的是提供使激光能更稳定的半导体器件的激光装置，激光照射方法和制造方法。 为了达到该目的，从振荡器发射的激光束的一部分被采样以产生包含作为激光束的数据能量波动的电信号。 对信号进行信号处理，计算激光束的能量波动的频率，振幅和相位。 控制光量调节装置的透射率，以便透射率与激光束的能量波动的相位相反，并且能够减小从振荡器发射的激光束的振幅的振幅，进行控制 基于与从振荡器发射的激光束的振荡同步的信号的相位与计算的相位之间的相位差相对于从采样的激光束到从振荡器发射的激光束的能量比，以及频率 并计算振幅。 在光量调节装置中，调整从振荡器能量振荡的激光束的能量。

公开(公告)号：US07881350B2

公开(公告)日：2011-02-01

申请号：US11730973

申请日：2007-04-05

申请人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tamae Takano ,  Masaki Koyama

发明人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tamae Takano ,  Masaki Koyama

IPC分类号： H01S3/10

CPC分类号： B23K26/08 ,  B23K26/704 ,  H01S3/005 ,  H01S3/225 ,  Y10S117/904

摘要： It is an object to provide a laser apparatus, a laser irradiating method and a manufacturing method of a semiconductor device that can perform uniform a process with a laser beam to an object uniformly. The present invention provides a laser apparatus comprising an optical system for sampling a part of a laser beam emitted from an oscillator, a sensor for generating an electric signal including fluctuation in energy of the laser beam as a data from the part of the laser beam, a means for performing signal processing to the electrical signal to grasp a state of the fluctuation in energy of the laser beam, and controlling a relative speed of an beam spot of the laser beam to an object in order to change in phase with the fluctuation in energy of the laser beam.

摘要翻译： 本发明的目的是提供一种可以使激光束对物体均匀地进行均匀处理的半导体器件的激光装置，激光照射方法和制造方法。 本发明提供了一种激光装置，其包括用于对从振荡器发射的激光束的一部分进行取样的光学系统，用于产生包括激光束的能量波动的电信号作为来自激光束的一部分的数据的传感器， 用于对电信号执行信号处理以掌握激光束的能量波动的状态的装置，以及将激光束的光点相对于物体的相对速度控制为与第一激光束 激光束的能量。

公开(公告)号：US20070195837A1

公开(公告)日：2007-08-23

申请号：US11730973

申请日：2007-04-05

申请人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tamae Takano ,  Masaki Koyama

发明人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tamae Takano ,  Masaki Koyama

IPC分类号： H01S3/00 ,  H01S3/22

CPC分类号： B23K26/08 ,  B23K26/704 ,  H01S3/005 ,  H01S3/225 ,  Y10S117/904

摘要： It is an object to provide a laser apparatus, a laser irradiating method and a manufacturing method of a semiconductor device that can perform uniform a process with a laser beam to an object uniformly. The present invention provides a laser apparatus comprising an optical system for sampling a part of a laser beam emitted from an oscillator, a sensor for generating an electric signal including fluctuation in energy of the laser beam as a data from the part of the laser beam, a means for performing signal processing to the electrical signal to grasp a state of the fluctuation in energy of the laser beam, and controlling a relative speed of an beam spot of the laser beam to an object in order to change in phase with the fluctuation in energy of the laser beam.

摘要翻译： 本发明的目的是提供一种可以使激光束对物体均匀地进行均匀处理的半导体器件的激光装置，激光照射方法和制造方法。 本发明提供了一种激光装置，其包括用于对从振荡器发射的激光束的一部分进行取样的光学系统，用于产生包括激光束的能量波动的电信号作为来自激光束的一部分的数据的传感器， 用于对电信号执行信号处理以掌握激光束的能量波动的状态的装置，以及将激光束的光点相对于物体的相对速度控制为与第一激光束 激光束的能量。

公开(公告)号：US07223306B2

公开(公告)日：2007-05-29

申请号：US10663671

申请日：2003-09-17

申请人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tamae Takano ,  Masaki Koyama

发明人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tamae Takano ,  Masaki Koyama

IPC分类号： C30B25/12 ,  C30B25/14

CPC分类号： B23K26/08 ,  B23K26/704 ,  H01S3/005 ,  H01S3/225 ,  Y10S117/904

摘要： It is an object to provide a laser apparatus, a laser irradiating method and a manufacturing method of a semiconductor device that can perform uniform a process with a laser beam to an object uniformly. The present invention provides a laser apparatus comprising an optical system for sampling a part of a laser beam emitted from an oscillator, a sensor for generating an electric signal including fluctuation in energy of the laser beam as a data from the part of the laser beam, a means for performing signal processing to the electrical signal to grasp a state of the fluctuation in energy of the laser beam, and controlling a relative speed of an beam spot of the laser beam to an object in order to change in phase with the fluctuation in energy of the laser beam.

公开(公告)号：US20080070352A1

公开(公告)日：2008-03-20

申请号：US11978585

申请日：2007-10-30

申请人： Akihisa Shimomura ,  Osamu Nakamura ,  Tatsuya Arao ,  Hidekazu Miyairi ,  Atsuo Isobe ,  Tamae Takano ,  Kouki Inoue

发明人： Akihisa Shimomura ,  Osamu Nakamura ,  Tatsuya Arao ,  Hidekazu Miyairi ,  Atsuo Isobe ,  Tamae Takano ,  Kouki Inoue

IPC分类号： H01L21/84

CPC分类号： H01L21/02683 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78675

摘要： An impurity of one conductivity type is ionized and accelerated by electric field before being implanted into a semiconductor layer to form a high concentration impurity region near its surface. Then the semiconductor layer is irradiated with continuous wave laser light for melting and crystallization or recrystallization, through which a region where the concentration of the impurity is constant is formed in the semiconductor layer. The continuous wave laser light irradiation may bring the semiconductor layer to the crystalline phase from the amorphous phase as long as the impurity element is re-distributed. The impurity is segregated through this process to newly create a high concentration region. However, this region is removed and no problem arises.

公开(公告)号：US07329594B2

公开(公告)日：2008-02-12

申请号：US10607542

申请日：2003-06-27

申请人： Akihisa Shimomura ,  Osamu Nakamura ,  Tatsuya Arao ,  Hidekazu Miyairi ,  Atsuo Isobe ,  Tamae Takano ,  Kouki Inoue

发明人： Akihisa Shimomura ,  Osamu Nakamura ,  Tatsuya Arao ,  Hidekazu Miyairi ,  Atsuo Isobe ,  Tamae Takano ,  Kouki Inoue

IPC分类号： H01L21/425

CPC分类号： H01L21/02683 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78675

摘要： An impurity of one conductivity type is ionized and accelerated by electric field before being implanted into a semiconductor layer to form a high concentration impurity region near its surface. Then the semiconductor layer is irradiated with continuous wave laser light for melting and crystallization or recrystallization, through which a region where the concentration of the impurity is constant is formed in the semiconductor layer. The continuous wave laser light irradiation may bring the semiconductor layer to the crystalline phase from the amorphous phase as long as the impurity element is re-distributed. The impurity is segregated through this process to newly create a high concentration region. However, this region is removed and no problem arises.

摘要翻译： 一种导电类型的杂质在被注入半导体层之前被电场电离和加速，以在其表面附近形成高浓度杂质区。 然后用连续波激光照射半导体层进行熔融和结晶或再结晶，半导体层中形成杂质浓度恒定的区域。 只要杂质元素被重新分布，连续波激光照射可以使半导体层从非晶相进入结晶相。 通过该过程将杂质分离，以产生新的高浓度区域。 然而，该区域被移除并且没有问题出现。

公开(公告)号：US07534705B2

公开(公告)日：2009-05-19

申请号：US11978585

申请日：2007-10-30

申请人： Akihisa Shimomura ,  Osamu Nakamura ,  Tatsuya Arao ,  Hidekazu Miyairi ,  Atsuo Isobe ,  Tamae Takano ,  Kouki Inoue

发明人： Akihisa Shimomura ,  Osamu Nakamura ,  Tatsuya Arao ,  Hidekazu Miyairi ,  Atsuo Isobe ,  Tamae Takano ,  Kouki Inoue

IPC分类号： H01L21/425

CPC分类号： H01L21/02683 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78675

摘要： An impurity of one conductivity type is ionized and accelerated by electric field before being implanted into a semiconductor layer to form a high concentration impurity region near its surface. Then the semiconductor layer is irradiated with continuous wave laser light for melting and crystallization or recrystallization, through which a region where the concentration of the impurity is constant is formed in the semiconductor layer. The continuous wave laser light irradiation may bring the semiconductor layer to the crystalline phase from the amorphous phase as long as the impurity element is re-distributed. The impurity is segregated through this process to newly create a high concentration region. However, this region is removed and no problem arises.

摘要翻译： 一种导电类型的杂质在被注入半导体层之前被电场电离和加速，以在其表面附近形成高浓度杂质区。 然后用连续波激光照射半导体层进行熔融和结晶或再结晶，半导体层中形成杂质浓度恒定的区域。 只要杂质元素被重新分布，连续波激光照射可以使半导体层从非晶相进入结晶相。 通过该过程将杂质分离，以产生新的高浓度区域。 然而，该区域被移除并且没有问题出现。

公开(公告)号：US20070141733A1

公开(公告)日：2007-06-21

申请号：US11704206

申请日：2007-02-09

申请人： Akihisa Shimomura ,  Kenji Kasahara ,  Aiko Shiga ,  Hidekazu Miyairi ,  Koichiro Tanaka ,  Koji Dairiki

发明人： Akihisa Shimomura ,  Kenji Kasahara ,  Aiko Shiga ,  Hidekazu Miyairi ,  Koichiro Tanaka ,  Koji Dairiki

IPC分类号： H01L21/66 ,  H01L21/84

CPC分类号： H01L21/02686 ,  H01L21/02683 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/6675 ,  H01L29/78672 ,  Y10S438/949

摘要： A laser beam irradiation method that achieves uniform crystallization, even if a film thickness of an a-Si film or the like fluctuates, is provided. The present invention provides a laser beam irradiation method in which a non-single crystal semiconductor film is formed on a substrate having an insulating surface and a laser beam having a wavelength longer than 350 nm is irradiated to the non-single crystal semiconductor film, thus crystallizing the non-single crystal silicon film. The non-single crystal semiconductor film has a film thickness distribution within the surface of the substrate, and a differential coefficient of a laser beam absorptivity with respect to the film thickness of the non-single crystal semiconductor film is positive.

摘要翻译： 即使a-Si膜的膜厚等发生波动，也能够实现均匀结晶化的激光束照射方法。 本发明提供一种激光束照射方法，其中在具有绝缘面的基板上形成非单晶半导体膜，并且将具有波长超过350nm的激光束照射到非单晶半导体膜上，因此 使非单晶硅膜结晶。 非单晶半导体膜在基板的表面内具有膜厚分布，并且相对于非单晶半导体膜的膜厚度的激光束吸收率的微分系数为正。