公开(公告)号：US07920611B2

公开(公告)日：2011-04-05

申请号：US12000814

申请日：2007-12-18

申请人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tamae Takano ,  Masaki Koyama ,  Koichiro Tanaka

发明人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tamae Takano ,  Masaki Koyama ,  Koichiro Tanaka

IPC分类号： H01S3/13 ,  H01S3/22

CPC分类号： H01S3/131 ,  B23K26/702

摘要： It is an object to provide a laser apparatus, a laser irradiating method and a manufacturing method of a semiconductor device that make laser energy more stable. To attain the object, a part of laser beam emitted from an oscillator is sampled to generate an electric signal that contains as data energy fluctuation of a laser beam. The electric signal is subjected to signal processing to calculate the frequency, amplitude, and phase of the energy fluctuation of the laser beam. The transmittance of a light amount adjusting means is controlled in order that the transmittance changes in antiphase to the phase of the energy fluctuation of the laser beam and with an amplitude capable of reducing the amplitude of laser beam emitted from the oscillator, the control being made based on the phase difference between the phase of a signal that is in synchronization with oscillation of laser beam emitted from the oscillator and the phase calculated, on the energy ratio of the sampled laser beam to laser beam emitted from the oscillator, and on the frequency and amplitude calculated. In the light amount adjusting means, energy of the laser beam oscillated from the oscillator energy is adjusted.

摘要翻译： 本发明的目的是提供使激光能更稳定的半导体器件的激光装置，激光照射方法和制造方法。 为了达到该目的，从振荡器发射的激光束的一部分被采样以产生包含作为激光束的数据能量波动的电信号。 对信号进行信号处理，计算激光束的能量波动的频率，振幅和相位。 控制光量调节装置的透射率，以便透射率与激光束的能量波动的相位相反，并且能够减小从振荡器发射的激光束的振幅的振幅，进行控制 基于与从振荡器发射的激光束的振荡同步的信号的相位与计算的相位之间的相位差相对于从采样的激光束到从振荡器发射的激光束的能量比，以及频率 并计算振幅。 在光量调节装置中，调整从振荡器能量振荡的激光束的能量。

公开(公告)号：US20090016393A1

公开(公告)日：2009-01-15

申请号：US12000814

申请日：2007-12-18

申请人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tamae Takano ,  Masaki Koyama ,  Koichiro Tanaka

发明人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tamae Takano ,  Masaki Koyama ,  Koichiro Tanaka

IPC分类号： H01S3/22 ,  H01S3/00

CPC分类号： H01S3/131 ,  B23K26/702

摘要： It is an object to provide a laser apparatus, a laser irradiating method and a manufacturing method of a semiconductor device that make laser energy more stable. To attain the object, a part of laser beam emitted from an oscillator is sampled to generate an electric signal that contains as data energy fluctuation of a laser beam. The electric signal is subjected to signal processing to calculate the frequency, amplitude, and phase of the energy fluctuation of the laser beam. The transmittance of a light amount adjusting means is controlled in order that the transmittance changes in antiphase to the phase of the energy fluctuation of the laser beam and with an amplitude capable of reducing the amplitude of laser beam emitted from the oscillator, the control being made based on the phase difference between the phase of a signal that is in synchronization with oscillation of laser beam emitted from the oscillator and the phase calculated, on the energy ratio of the sampled laser beam to laser beam emitted from the oscillator, and on the frequency and amplitude calculated. In the light amount adjusting means, energy of the laser beam oscillated from the oscillator energy is adjusted.

摘要翻译： 本发明的目的是提供使激光能更稳定的半导体器件的激光装置，激光照射方法和制造方法。 为了达到该目的，从振荡器发射的激光束的一部分被采样以产生包含作为激光束的数据能量波动的电信号。 对信号进行信号处理，计算激光束的能量波动的频率，振幅和相位。 控制光量调节装置的透射率，以便透射率与激光束的能量波动的相位相反，并且能够减小从振荡器发射的激光束的振幅的振幅，进行控制 基于与从振荡器发射的激光束的振荡同步的信号的相位与计算的相位之间的相位差相对于从采样的激光束到从振荡器发射的激光束的能量比，以及频率 并计算振幅。 在光量调节装置中，调整从振荡器能量振荡的激光束的能量。

公开(公告)号：US07359412B2

公开(公告)日：2008-04-15

申请号：US10658472

申请日：2003-09-10

申请人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tamae Takano ,  Masaki Koyama ,  Koichiro Tanaka

发明人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tamae Takano ,  Masaki Koyama ,  Koichiro Tanaka

IPC分类号： H01S3/13

CPC分类号： H01S3/131 ,  B23K26/702

摘要： It is an object to provide a laser apparatus, a laser irradiating method and a manufacturing method of a semiconductor device that make laser energy more stable. To attain the object, a part of laser beam emitted from an oscillator is sampled to generate an electric signal that contains as data energy fluctuation of a laser beam. The electric signal is subjected to signal processing to calculate the frequency, amplitude, and phase of the energy fluctuation of the laser beam. The transmittance of a light amount adjusting means is controlled in order that the transmittance changes in antiphase to the phase of the energy fluctuation of the laser beam and with an amplitude capable of reducing the amplitude of laser beam emitted from the oscillator, the control being made based on the phase difference between the phase of a signal that is in synchronization with oscillation of laser beam emitted from the oscillator and the phase calculated, on the energy ratio of the sampled laser beam to laser beam emitted from the oscillator, and on the frequency and amplitude calculated. In the light amount adjusting means, energy of the laser beam oscillated from the oscillator energy is adjusted.

摘要翻译： 本发明的目的是提供使激光能更稳定的半导体器件的激光装置，激光照射方法和制造方法。 为了达到该目的，从振荡器发射的激光束的一部分被采样以产生包含作为激光束的数据能量波动的电信号。 对信号进行信号处理，计算激光束的能量波动的频率，振幅和相位。 控制光量调节装置的透射率，以便透射率与激光束的能量波动的相位相反，并且能够减小从振荡器发射的激光束的振幅的振幅，进行控制 基于与从振荡器发射的激光束的振荡同步的信号的相位与计算的相位之间的相位差相对于从采样的激光束到从振荡器发射的激光束的能量比，以及频率 并计算振幅。 在光量调节装置中，调整从振荡器能量振荡的激光束的能量。

公开(公告)号：US20070195837A1

公开(公告)日：2007-08-23

申请号：US11730973

申请日：2007-04-05

申请人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tamae Takano ,  Masaki Koyama

发明人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tamae Takano ,  Masaki Koyama

IPC分类号： H01S3/00 ,  H01S3/22

CPC分类号： B23K26/08 ,  B23K26/704 ,  H01S3/005 ,  H01S3/225 ,  Y10S117/904

摘要： It is an object to provide a laser apparatus, a laser irradiating method and a manufacturing method of a semiconductor device that can perform uniform a process with a laser beam to an object uniformly. The present invention provides a laser apparatus comprising an optical system for sampling a part of a laser beam emitted from an oscillator, a sensor for generating an electric signal including fluctuation in energy of the laser beam as a data from the part of the laser beam, a means for performing signal processing to the electrical signal to grasp a state of the fluctuation in energy of the laser beam, and controlling a relative speed of an beam spot of the laser beam to an object in order to change in phase with the fluctuation in energy of the laser beam.

摘要翻译： 本发明的目的是提供一种可以使激光束对物体均匀地进行均匀处理的半导体器件的激光装置，激光照射方法和制造方法。 本发明提供了一种激光装置，其包括用于对从振荡器发射的激光束的一部分进行取样的光学系统，用于产生包括激光束的能量波动的电信号作为来自激光束的一部分的数据的传感器， 用于对电信号执行信号处理以掌握激光束的能量波动的状态的装置，以及将激光束的光点相对于物体的相对速度控制为与第一激光束 激光束的能量。

公开(公告)号：US07223306B2

公开(公告)日：2007-05-29

申请号：US10663671

申请日：2003-09-17

申请人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tamae Takano ,  Masaki Koyama

发明人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tamae Takano ,  Masaki Koyama

IPC分类号： C30B25/12 ,  C30B25/14

CPC分类号： B23K26/08 ,  B23K26/704 ,  H01S3/005 ,  H01S3/225 ,  Y10S117/904

摘要： It is an object to provide a laser apparatus, a laser irradiating method and a manufacturing method of a semiconductor device that can perform uniform a process with a laser beam to an object uniformly. The present invention provides a laser apparatus comprising an optical system for sampling a part of a laser beam emitted from an oscillator, a sensor for generating an electric signal including fluctuation in energy of the laser beam as a data from the part of the laser beam, a means for performing signal processing to the electrical signal to grasp a state of the fluctuation in energy of the laser beam, and controlling a relative speed of an beam spot of the laser beam to an object in order to change in phase with the fluctuation in energy of the laser beam.

公开(公告)号：US07881350B2

公开(公告)日：2011-02-01

申请号：US11730973

申请日：2007-04-05

申请人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tamae Takano ,  Masaki Koyama

发明人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tamae Takano ,  Masaki Koyama

IPC分类号： H01S3/10

CPC分类号： B23K26/08 ,  B23K26/704 ,  H01S3/005 ,  H01S3/225 ,  Y10S117/904

摘要： It is an object to provide a laser apparatus, a laser irradiating method and a manufacturing method of a semiconductor device that can perform uniform a process with a laser beam to an object uniformly. The present invention provides a laser apparatus comprising an optical system for sampling a part of a laser beam emitted from an oscillator, a sensor for generating an electric signal including fluctuation in energy of the laser beam as a data from the part of the laser beam, a means for performing signal processing to the electrical signal to grasp a state of the fluctuation in energy of the laser beam, and controlling a relative speed of an beam spot of the laser beam to an object in order to change in phase with the fluctuation in energy of the laser beam.

摘要翻译： 本发明的目的是提供一种可以使激光束对物体均匀地进行均匀处理的半导体器件的激光装置，激光照射方法和制造方法。 本发明提供了一种激光装置，其包括用于对从振荡器发射的激光束的一部分进行取样的光学系统，用于产生包括激光束的能量波动的电信号作为来自激光束的一部分的数据的传感器， 用于对电信号执行信号处理以掌握激光束的能量波动的状态的装置，以及将激光束的光点相对于物体的相对速度控制为与第一激光束 激光束的能量。

公开(公告)号：US20080070352A1

公开(公告)日：2008-03-20

申请号：US11978585

申请日：2007-10-30

申请人： Akihisa Shimomura ,  Osamu Nakamura ,  Tatsuya Arao ,  Hidekazu Miyairi ,  Atsuo Isobe ,  Tamae Takano ,  Kouki Inoue

发明人： Akihisa Shimomura ,  Osamu Nakamura ,  Tatsuya Arao ,  Hidekazu Miyairi ,  Atsuo Isobe ,  Tamae Takano ,  Kouki Inoue

IPC分类号： H01L21/84

CPC分类号： H01L21/02683 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78675

摘要： An impurity of one conductivity type is ionized and accelerated by electric field before being implanted into a semiconductor layer to form a high concentration impurity region near its surface. Then the semiconductor layer is irradiated with continuous wave laser light for melting and crystallization or recrystallization, through which a region where the concentration of the impurity is constant is formed in the semiconductor layer. The continuous wave laser light irradiation may bring the semiconductor layer to the crystalline phase from the amorphous phase as long as the impurity element is re-distributed. The impurity is segregated through this process to newly create a high concentration region. However, this region is removed and no problem arises.

公开(公告)号：US07329594B2

公开(公告)日：2008-02-12

申请号：US10607542

申请日：2003-06-27

申请人： Akihisa Shimomura ,  Osamu Nakamura ,  Tatsuya Arao ,  Hidekazu Miyairi ,  Atsuo Isobe ,  Tamae Takano ,  Kouki Inoue

发明人： Akihisa Shimomura ,  Osamu Nakamura ,  Tatsuya Arao ,  Hidekazu Miyairi ,  Atsuo Isobe ,  Tamae Takano ,  Kouki Inoue

IPC分类号： H01L21/425

CPC分类号： H01L21/02683 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78675

摘要： An impurity of one conductivity type is ionized and accelerated by electric field before being implanted into a semiconductor layer to form a high concentration impurity region near its surface. Then the semiconductor layer is irradiated with continuous wave laser light for melting and crystallization or recrystallization, through which a region where the concentration of the impurity is constant is formed in the semiconductor layer. The continuous wave laser light irradiation may bring the semiconductor layer to the crystalline phase from the amorphous phase as long as the impurity element is re-distributed. The impurity is segregated through this process to newly create a high concentration region. However, this region is removed and no problem arises.

摘要翻译： 一种导电类型的杂质在被注入半导体层之前被电场电离和加速，以在其表面附近形成高浓度杂质区。 然后用连续波激光照射半导体层进行熔融和结晶或再结晶，半导体层中形成杂质浓度恒定的区域。 只要杂质元素被重新分布，连续波激光照射可以使半导体层从非晶相进入结晶相。 通过该过程将杂质分离，以产生新的高浓度区域。 然而，该区域被移除并且没有问题出现。

公开(公告)号：US07534705B2

公开(公告)日：2009-05-19

申请号：US11978585

申请日：2007-10-30

申请人： Akihisa Shimomura ,  Osamu Nakamura ,  Tatsuya Arao ,  Hidekazu Miyairi ,  Atsuo Isobe ,  Tamae Takano ,  Kouki Inoue

发明人： Akihisa Shimomura ,  Osamu Nakamura ,  Tatsuya Arao ,  Hidekazu Miyairi ,  Atsuo Isobe ,  Tamae Takano ,  Kouki Inoue

IPC分类号： H01L21/425

CPC分类号： H01L21/02683 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78675

摘要： An impurity of one conductivity type is ionized and accelerated by electric field before being implanted into a semiconductor layer to form a high concentration impurity region near its surface. Then the semiconductor layer is irradiated with continuous wave laser light for melting and crystallization or recrystallization, through which a region where the concentration of the impurity is constant is formed in the semiconductor layer. The continuous wave laser light irradiation may bring the semiconductor layer to the crystalline phase from the amorphous phase as long as the impurity element is re-distributed. The impurity is segregated through this process to newly create a high concentration region. However, this region is removed and no problem arises.

摘要翻译： 一种导电类型的杂质在被注入半导体层之前被电场电离和加速，以在其表面附近形成高浓度杂质区。 然后用连续波激光照射半导体层进行熔融和结晶或再结晶，半导体层中形成杂质浓度恒定的区域。 只要杂质元素被重新分布，连续波激光照射可以使半导体层从非晶相进入结晶相。 通过该过程将杂质分离，以产生新的高浓度区域。 然而，该区域被移除并且没有问题出现。

公开(公告)号：US07326961B2

公开(公告)日：2008-02-05

申请号：US11107822

申请日：2005-04-18

申请人： Shunpei Yamazaki ,  Atsuo Isobe ,  Tamae Takano ,  Hidekazu Miyairi

发明人： Shunpei Yamazaki ,  Atsuo Isobe ,  Tamae Takano ,  Hidekazu Miyairi

IPC分类号： H01L29/72

CPC分类号： H01L21/02691 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/2022 ,  H01L27/12 ,  H01L27/1281

摘要： To provide devices relating to a manufacturing method for a semiconductor device using a laser crystallization method, which is capable of reducing a cost involved in a design change, preventing a grain boundary from developing in a channel formation region of a TFT, and preventing a remarkable reduction in mobility of the TFT, a decrease in an ON current, and an increase in an OFF current due to the grain boundary and to a semiconductor device formed by using the manufacturing method. In a semiconductor device according to the present invention, among a plurality of TFTs formed on a base film, some TFTs are electrically connected to form logic elements. The plurality of logic elements are used to form a circuit. The base film has a plurality of projective portions having a rectangular or stripe shape. Island-like semiconductor films included in each of the plurality of TFTs are formed between the plurality of projective portions and also, are crystallized by a laser light scanned in a longitudinal direction of the projective portions.

摘要翻译： 为了提供与使用激光结晶法的半导体器件的制造方法相关的装置，其能够降低设计变化中涉及的成本，防止晶界在TFT的沟道形成区域中发展，并且防止显着 TFT的迁移率的降低，导通电流的降低以及由于晶界引起的关断电流的增加以及通过使用该制造方法形成的半导体器件。 在根据本发明的半导体器件中，在形成在基膜上的多个TFT中，一些TFT电连接形成逻辑元件。 多个逻辑元件用于形成电路。 基膜具有多个具有矩形或条状的突出部分。 包含在多个TFT中的多个TFT中的岛状半导体膜形成在多个投影部之间，并且通过沿着投影部的纵向扫描的激光而结晶化。