摘要:
An apparatus for lapping a workpiece including a plurality of magnetic heads supported by a tool is disclosed. The lapping apparatus comprises a rotary lapping table, a lapping head attachment frame, an adjuster ring resiliently supported by the frame, a lapping head attached to the adjuster ring, a tilting assembly attached to the lapping head, and an up and down movable back plate pivotally attached to the lapping head. The apparatus further comprises first actuators or cylinders for correcting balance by applying forces on right and left sides of the pivotal point of the back plate, and second actuators or cylinders for correcting bow of the workpiece by applying operating forces on a plurality of predetermined locations of the tool so that the moving directions of movable parts of the second actuator means are substantially parallel with the directions of the operating forces.
摘要:
In the polishing work for forming a crown shape on a ceramic bar bearing a plurality of conversion units for the magnetic heads, the present invention is to provide a well-controlled satisfactory shape by pressing the ceramic bar, provided with plural grooves perpendicular to the longitudinal direction and on a surface opposed to the polished plane, to a substantially concave polishing plane through an elastic member principally composed of rubber, then measuring the magneto resistivity of an element provided in the conversion unit of the magnetic head, and adjusting the pressure at the crown forming operation by a closed loop control based on the result of such measurement.
摘要:
To provide an apparatus that may impart a complicated bend deformation to an object to be machined such as a ceramic bar elongated in one direction or the like, and may reduce the non-uniformity in machining amount of the object to be machined upon the machining work of the object to be machined, specifically a correcting mechanism for deforming the object to be machined together with a jig holding the object to be machined is provided in a machining apparatus. The correcting mechanism includes a base, a plurality of levers provided at first ends with pins, a shaft fixed to the base for rotatably supporting the levers, and a plurality of correcting drive means coupled to second ends of said levers for pivoting the levers to the shaft to thereby pivoting the pins. The jig includes a plurality of load receiving portions arranged in a holding portion elongated on one direction for holding the object to be machined whereby portions corresponding to the load receiving portion in the holding portion are deformed together with the object to be machined in accordance with pivoting of each pin.
摘要:
To provide an apparatus that may impart a complicated bend deformation to an object to be machined such as a ceramic bar elongated in one direction or the like, and may reduce the non-uniformity in machining amount of the object to be machined upon the machining work of the object to be machined, specifically a correcting mechanism for deforming the object to be machined together with a jig holding the object to be machined is provided in a machining apparatus. The correcting mechanism includes a base, a plurality of levers provided at first ends with pins, a shaft fixed to the base for rotatably supporting the levers, and a plurality of correcting drive means coupled to second ends of said levers for pivoting the levers to the shaft to thereby pivoting the pins. The jig includes a plurality of load receiving portions arranged in a holding portion elongated on one direction for holding the object to be machined whereby portions corresponding to the load receiving portion in the holding portion are deformed together with the object to be machined in accordance with pivoting of each pin.
摘要:
When electric elements are formed on a ceramic bar or the like, the positional displacement of the respective elements occurs due to a division exposing process or the like. An object of the present invention is to provide a device and a method which unify the non-polished portion of the respective elements by conducting polishing while a complicated deformation or the like is given to the ceramic bar. To achieve this object, the ceramic bar or like is held by using a jig, and a plurality of loads are applied to portions of the jig where the ceramic bar or the like is held, to thereby deform the ceramic bar or the like and polish the element in that state. In this situation the load applied points are disposed so as to avoid the boundaries of the division exposure.
摘要:
A ZnO-containing semiconductor layer contains Se added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or a semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted.
摘要:
An apparatus washes/disinfects, at a time, a plurality of endoscopes having a plurality of channels with different diameters, and dewaters the channels at a time. For the dewatering, the apparatus includes plural ports for receiving air supply, and a plurality of tubes for connecting between each of the plurality of ports and each of the plurality of channels in each of the plurality of endoscopes. The apparatus also includes an on-off valve for intermittently supply air to the ports, and a control unit for opening/closing the valve a plurality of times at a predetermined ratio. Water droplets remaining in a large-diameter channel are mainly moved by wind pressure of continuously flowing air while the valve is open, and discharged. Water droplets in a smaller-diameter channel are mainly moved by hammer effect of high-pressure air caused while the valve is closed, and discharged. The valve opening/closing is repeated for complete dewatering.
摘要:
The characteristics of thin-film magnetic heads are evaluated by measuring, in a step and repeat method and apparatus, the magnetic field generated by the respective heads in a bar including multiple heads.
摘要:
A manufacture method for zinc oxide (ZnO) based semiconductor crystal includes providing a substrate having a Zn polarity plane; and reacting at least zinc (Zn) and oxygen (O) on the Zn polarity plane of said substrate to grow ZnO based semiconductor crystal on the Zn polarity plane of said substrate in a Zn rich condition. (a) An n-type ZnO buffer layer is formed on a Zn polarity plane of a substrate. (b) An n-type ZnO layer is formed on the surface of the n-type ZnO buffer layer. (c) An n-type ZnMgO layer is formed on the surface of the n-type ZnO layer. (d) A ZnO/ZnMgO quantum well layer is formed on the surface of the n-type ZnMgO layer, by alternately laminating a ZnO layer and a ZnMgO layer. @(e) A p-type ZnMgO layer is formed on the surface of the ZnO/ZnMgO quantum well layer. (f) A p-type ZnO layer is formed on the surface of the p-type ZnMgO layer. @(g) An electrode is formed on the n-type ZnO layer and p-type ZnO layer. The n-type ZnO layer is formed under a Zn rich condition at the step (b).
摘要:
A growth apparatus and a method for making a nitrogen (N)-doped oxide crystal grow can be configured to set a nitrogen concentration to a desired concentration and to make the concentration of nitrogen uniform in a depth direction. A nitrogen source gun configured to supply ammonia (NH3) gas into an ultrahigh vacuum chamber can be arranged on a side of an ultrahigh vacuum chamber that is approximately opposite to a side that includes an exhaust port. A stage can be located between the nitrogen source gun and the exhaust port so as to form a flow path for ammonia that allows ammonia introduced into the ultrahigh vacuum chamber to be quickly exhausted after reaching a ZnO substrate placed on the stage. As a result, accumulation of ammonia in the ultrahigh vacuum chamber can be minimized, so that the nitrogen concentration in a crystal growth layer on the ZnO substrate can be set at a desired concentration and can be made uniform in the depth direction.