公开(公告)号：US20250132225A1

公开(公告)日：2025-04-24

申请号：US18834335

申请日：2022-03-02

Applicant: HITACHI ASTEMO, LTD.

Inventor： Yusuke TAKAGI ,  Yujiro KANEKO

IPC: H01L23/40 ,  H01L25/07 ,  H10D80/20 ,  H10D84/80

Abstract: A semiconductor device includes: one or more semiconductor modules arranged in a row; a pair of cooling members disposed so as to sandwich the semiconductor modules and configured to cool the semiconductor modules; a pair of sandwiching members each disposed on an opposite side of the semiconductor module across a corresponding one of the pair of cooling members to oppose the corresponding one of the pair of cooling members; and a coupling portion that couples a pair of sandwiching members to each other and presses each of the pair of sandwiching members against the opposing one of the cooling members, in which at least one of the pair of sandwiching members includes a plurality of support portions disposed to oppose ends of the arranged semiconductor modules and a space between the semiconductor modules, and a spring portion extending from each of the plurality of support portions in an arrangement direction of the semiconductor modules and abutting the cooling member, and the coupling portion couples the support portion provided to the one of the pair of sandwiching members and another sandwiching member.

公开(公告)号：US20230187305A1

公开(公告)日：2023-06-15

申请号：US17925423

申请日：2021-01-22

Applicant: Hitachi Astemo, Ltd.

Inventor： Hiromi SHIMAZU ,  Yujiro KANEKO ,  Yusuke TAKAGI

IPC: H01L23/367 ,  H01L25/07 ,  H01L23/00

CPC classification number: H01L23/3675 ,  H01L25/072 ,  H01L24/32 ,  H01L2224/32245 ,  H01L2924/1011 ,  H01L2924/1611 ,  H01L2924/16196 ,  H01L2924/16251 ,  H01L2924/1815 ,  H01L2924/182 ,  H01L2924/186

Abstract: A power module includes a first conductor plate to which a first power semiconductor element is bonded, a second conductor plate to which a second power semiconductor element is bonded, the second conductor plate being disposed adjacent to the first conductor plate, a first heat-dissipating member disposed counter to the first conductor plate and the second conductor plate, and a first insulating sheet member disposed between the first heat-dissipating member and the first conductor plate. The first power semiconductor element is disposed at a position at which a first length from an end of the first conductor plate, the end being closer to the second conductor plate, to the first power semiconductor element is larger than a second length from an end of the first conductor plate, the end being far from the second conductor plate, to the first power semiconductor element, and the second length is larger than the thickness of the first conductor plate.

公开(公告)号：US20250105110A1

公开(公告)日：2025-03-27

申请号：US18726097

申请日：2022-12-28

Applicant: HITACHI ASTEMO, LTD.

Inventor： Nobutake TSUYUNO ,  Yujiro KANEKO ,  Yusuke TAKAGI

IPC: H01L23/495 ,  H01L23/00 ,  H01L23/31 ,  H01L23/367 ,  H01L25/07

Abstract: A semiconductor device has a conductor plate to which a plurality of semiconductor elements are joined; an insulation sheet which is bonded to the opposite face of the conductor plate from the side facing the semiconductor elements; and a resin member which seals the semiconductor elements, the insulation sheet and the conductor plate. The conductor plate includes element joining regions to which the semiconductor elements are respectively joined, and a connection region which is provided between the element joining regions. The surface of the element joining regions of the conductor plate on the side facing the insulation sheet protrudes beyond the surface of the connection region on the side facing the insulation sheet and is bonded to the insulation sheet. The resin member is filled between the insulation sheet and the surface of the connection region of the conductor plate on the side facing the insulation sheet.

公开(公告)号：US20240243032A1

公开(公告)日：2024-07-18

申请号：US18561923

申请日：2022-03-04

Applicant: Hitachi Astemo, Ltd.

Inventor： Nobutake TSUYUNO ,  Yujiro KANEKO ,  Yusuke TAKAGI

IPC: H01L23/373 ,  H01L23/00 ,  H01L23/367 ,  H01L25/065

CPC classification number: H01L23/3735 ,  H01L23/3675 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0652 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48137 ,  H01L2224/48145 ,  H01L2224/73265 ,  H01L2924/01013 ,  H01L2924/0665 ,  H01L2924/12 ,  H01L2924/1306 ,  H01L2924/182

Abstract: In an electric circuit body, at least one of the cooling members fixed to both surfaces of a first semiconductor module and a second semiconductor module includes a first heat dissipation region that abuts on the first semiconductor module through a heat conduction member, a second heat dissipation region that abuts on the second semiconductor module through the heat conduction member, and a low rigidity portion formed between the first heat dissipation region and the second heat dissipation region to have lower rigidity the first heat dissipation region and the second heat dissipation region; and the fixing member fixes the cooling member to both surfaces of the first semiconductor module and the second semiconductor module in the low rigidity portion of the cooling member.

公开(公告)号：US20240096727A1

公开(公告)日：2024-03-21

申请号：US18274747

申请日：2021-12-24

Applicant: Hitachi Astemo, Ltd.

Inventor： Hiromi SHIMAZU ,  Yujiro KANEKO ,  Yusuke TAKAGI

IPC: H01L23/367 ,  H01L23/00 ,  H01L23/495

CPC classification number: H01L23/367 ,  H01L23/49562 ,  H01L23/49568 ,  H01L24/32 ,  H01L2224/32245

Abstract: A first power semiconductor element and a second power semiconductor element of a power semiconductor device are such that, when heat generated by the first power semiconductor element is larger than heat generated by the second power semiconductor element, a first distance from an end of the first power semiconductor element to an end of the conductor plate is larger than a second distance from an end of the second power semiconductor element to an end, connected to the second power semiconductor element, of a second conductor plate.

公开(公告)号：US20240057302A1

公开(公告)日：2024-02-15

申请号：US18260352

申请日：2021-09-29

Applicant: HITACHI ASTEMO, LTD.

Inventor： Yusuke TAKAGI ,  Yujiro KANEKO

IPC: H05K7/20

CPC classification number: H05K7/20927 ,  H01L23/367

Abstract: A heat exchange device that is formed in a substantially rectangular shape and that cools a power semiconductor element, and a power conversion device comprising the heat exchange device, the heat exchange device including: a fin formation region in which cooling water flows in a transverse direction; and a buffer region formed in a lamination direction and facing the fin formation region, a partition wall being interposed therebetween, wherein an inlet and an outlet for the cooling water are respectively formed at at least one of both ends in a longitudinal direction, a flow path pit connecting the fin formation region and the buffer region is formed at both ends in the transverse direction, and the buffer region has a partition that divides the cooling water flowing in from the inlet and the cooling water flowing toward the outlet, and the inlet and the outlet are respectively connected to the fin formation region via the flow path pit.

公开(公告)号：US20220108940A1

公开(公告)日：2022-04-07

申请号：US17429464

申请日：2020-01-15

Applicant: Hitachi Astemo, Ltd.

Inventor： Yusuke TAKAGI ,  Ryo TERAYAMA ,  Ko HAMAYA ,  Osamu IKEDA

IPC: H01L23/495

Abstract: A power semiconductor module, which is a semiconductor device, includes a semiconductor element 155 and a lead frame 318 that is disposed to face the semiconductor element 155 and connected to the semiconductor element 155 by a solder material 162. The lead frame 318 has the top surface 331 including a surface facing the semiconductor element 155, and the side surface 334 connected to the peripheral edge portion 333 of the top surface 331 at a predetermined angle with respect to the top surface 331. The top surface of the lead frame 318 includes the solder surface 332 that is in contact with the solder material 162 and the solder resistance surface on which the solder material 162 is less wettable than on the solder surface 332. The solder resistance surface is formed to surround the periphery of the solder surface 332. In this manner, when the semiconductor element and the lead frame are solder-joined in the semiconductor device, the region where the solder wet-spreads is appropriately controlled.

公开(公告)号：US20240255233A1

公开(公告)日：2024-08-01

申请号：US18564148

申请日：2021-07-21

Applicant: HITACHI ASTEMO, LTD.

Inventor： Yusuke TAKAGI ,  Yujiro KANEKO

IPC: F28F1/40 ,  F28F3/02 ,  F28F3/12 ,  H02M7/00

CPC classification number: F28F1/40 ,  F28F3/025 ,  F28F3/12 ,  H02M7/003

Abstract: In a heat exchanger, an inner fin having heat transference is disposed in a flat passage, the inner fin is formed by a plurality of fin portions having a convex shape formed by a top surface portion and a side surface portion and having a hollow inside the convex shape; when a direction in which the plurality of fin portions are formed and lined to be continuous via a coupling portion is defined as a first direction and a direction in which slits are formed between the plurality of fin portions and lined is defined as a second direction, the plurality of fin portions are arranged at a predetermined interval in the second direction; and the inner fin is arranged such that the first direction and the second direction respectively forms an acute angle with respect to a flow of a refrigerant flowing in the flat passage.

公开(公告)号：US20240030827A1

公开(公告)日：2024-01-25

申请号：US18041105

申请日：2021-08-11

Applicant: HITACHI ASTEMO, LTD.

Inventor： Yusuke TAKAGI ,  Yujiro KANEKO ,  Masanori MIYAGI ,  Xudong ZHANG

IPC: H02M7/00 ,  H05K7/20 ,  H01L23/473

CPC classification number: H02M7/003 ,  H05K7/20927 ,  H01L23/473

Abstract: A power conversion device including: a semiconductor device; a first water channel and a second water channel stacked in a predetermined stacking direction and installed with the semiconductor device interposed therebetween; and a connecting water channel connecting the first water channel and the second water channel, in which the connecting water channel is formed by joining and fixing a joint member joined to the first water channel and the second water channel and a cover member separate from the joint member to each other, the first water channel and the second water channel are joined to the joint member by a joint formed in a plane parallel to the stacking direction, and the cover member covers the joint and is joined and fixed to the joint member.

公开(公告)号：US20240006271A1

公开(公告)日：2024-01-04

申请号：US18247490

申请日：2021-09-30

Applicant: HITACHI ASTEMO, LTD.

Inventor： Yusuke TAKAGI ,  Yujiro KANEKO

IPC: H01L23/473 ,  H05K7/20

CPC classification number: H01L23/473 ,  H05K7/20927 ,  H01L24/32

Abstract: A heating element cooling structure includes a heating element, a water path member through which a refrigerant flows, and a heat conductive layer covering an outer surface of the water path member, wherein the heat conductive layer is formed of a material having a thermal conductivity higher than a thermal conductivity of the water path member, wherein the heat conductive layer includes a first region formed on the outer surface, of the water path member, close to the heating element, and a second region formed on the outer surface, of the water path member, away from the heating element, and wherein the first region and the second region of the heat conductive layer are continuously formed.