PLASMA PROCESSING APPARATUS
    2.
    发明申请
    PLASMA PROCESSING APPARATUS 审中-公开
    等离子体加工设备

    公开(公告)号:US20160064189A1

    公开(公告)日:2016-03-03

    申请号:US14626952

    申请日:2015-02-20

    IPC分类号: H01J37/32

    摘要: A sample stage includes plural pushup pins that move a sample up/down above the stage, a recessed and protruding dielectric film on which the sample is loaded, a feeding port disposed on the film and through which gas is fed to a gap between the sample and the film, and openings of through-holes in which the pushup pins are housed, and the stage is connected to a feeding/evacuation conduit including a feeding-path that communicates with the port and through which gas fed to the gap flows, an evacuation-path that communicates with the opening and through which gas fed to the gap is discharged, and a connection-path through which the feeding-path and the evacuation-path communicate. With communication between the feeding-path and the evacuation-path via the connection-path interrupted, gas from the feeding-path is fed to the gap and into the through-hole via the gap.

    摘要翻译: 样品台包括在样品台上方向上/向下移动样品的多个上推销,其上加载有样品的凹入和突出的介电膜,设置在膜上的进料口,并且气体被供给到样品之间的间隙 薄膜以及其中容纳有上推销的通孔的开口,并且该台连接到包括与端口连通并且供给到间隙的气体流动的供给路径的进料/排出导管, 与开口连通并且供给到间隙的气体排出的排出路径和馈送路径与排气路径连通的连接路径。 通过中断的连通路径的进给路径和排气路径之间的连通,来自进给路径的气体经由间隙被供给到间隙并进入通孔。

    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
    3.
    发明申请
    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
    等离子体加工设备和等离子体处理方法

    公开(公告)号:US20140283534A1

    公开(公告)日:2014-09-25

    申请号:US14183559

    申请日:2014-02-19

    IPC分类号: H01L21/02

    摘要: A plasma processing apparatus includes: a refrigerating cycle including a refrigerant passage, a compressor, and a condenser, all of which are coupled in this order, and through which a refrigerant flows in this order, the refrigerant passage being disposed inside a sample stage and through which the refrigerant flows to serve as an evaporator; first and second expansion valves which are interposed between the condenser and the refrigerant passage and between the refrigerant passage and the compressor respectively in the refrigerating cycle; a vaporizer that is interposed between the second expansion valve and the compressor in the refrigerating cycle and which heats and vaporizes the refrigerant; and a controller which regulates opening and closing of the first and second expansion valves and regulates a refrigerant heat exchange amount of the condenser or vaporizer based on a refrigerant temperature between the condenser and the second expansion valve.

    摘要翻译: 等离子体处理装置包括:制冷循环,包括制冷剂通道,压缩机和冷凝器,所有制冷剂通道,压缩机和冷凝器均按顺序联接,制冷剂依次流动,制冷剂通道设置在样品台的内部, 制冷剂通过其流动以用作蒸发器; 在冷冻循环中分别介于冷凝器和制冷剂通道之间以及制冷剂通道和压缩机之间的第一和第二膨胀阀; 蒸发器,其在所述制冷循环中介于所述第二膨胀阀和所述压缩机之间,并且对所述制冷剂进行加热和蒸发; 以及控制器,其调节第一和第二膨胀阀的打开和关闭,并且基于冷凝器和第二膨胀阀之间的制冷剂温度来调节冷凝器或蒸发器的制冷剂热交换量。

    Plasma processing apparatus with gas feed and evacuation conduit

    公开(公告)号:US10103007B2

    公开(公告)日:2018-10-16

    申请号:US14626952

    申请日:2015-02-20

    IPC分类号: H01L21/683 H01J37/32

    摘要: A sample stage includes plural pushup pins that move a sample up/down above the stage, a recessed and protruding dielectric film on which the sample is loaded, a feeding port disposed on the film and through which gas is fed to a gap between the sample and the film, and openings of through-holes in which the pushup pins are housed, and the stage is connected to a feeding and evacuation conduit including a feeding path that communicates with the port and through which gas fed to the gap flows, an evacuation path that communicates with the opening and through which gas fed to the gap is discharged, and a connection path through which the feeding path and the evacuation path communicate. With communication between the feeding path and the evacuation path via the connection path interrupted, gas from the feeding path is fed to the gap and into the through-hole via the gap.

    PLASMA PROCESSING APPARATUS
    5.
    发明申请

    公开(公告)号:US20190244795A1

    公开(公告)日:2019-08-08

    申请号:US16110525

    申请日:2018-08-23

    摘要: A plasma processing apparatus including: a processing chamber; a sample stage; a vacuum exhaust unit; and a plasma generation unit, the sample stage includes: a first metallic base material having a refrigerant flow path formed therein; a second metallic base material disposed above the first metallic base material and has a lower thermal conductivity than the first metallic base material; and a plurality of lift pins vertically moving the object to be processed with respect to the sample stage. A plurality of through-holes through which the plurality of the lift pins passes is formed in the first and the second metallic base material, and a boss, which electrically insulates the lift pin from the first and the second metallic base material and is formed using an insulating member having a higher thermal conductivity than the second metallic base material, is inserted into each of the plurality of through-holes.

    Plasma processing apparatus
    6.
    发明授权

    公开(公告)号:US10217613B2

    公开(公告)日:2019-02-26

    申请号:US15273812

    申请日:2016-09-23

    摘要: A plasma processor, including a first gas supplier to supply first gas to the inside of a vacuum vessel, a stage on which a wafer is placed, an electromagnetic wave supplier to supply electromagnetic waves for generating first plasma, a susceptor provided to an outer peripheral portion of the stage, a second high frequency power source connected to the susceptor, and a second gas supplier to supply second gas to the inside of the susceptor. The inside of the susceptor is provided with a high frequency electrode connected to the second high frequency power source and a first earth electrode disposed opposite to the high frequency electrode. The second high frequency power source supplies high frequency power while the second gas supplier supplies the second gas, thereby generating second plasma inside the susceptor.

    Plasma processing apparatus and plasma processing method

    公开(公告)号:US10128141B2

    公开(公告)日:2018-11-13

    申请号:US14183559

    申请日:2014-02-19

    IPC分类号: H01L21/683 H01J37/32

    摘要: A plasma processing apparatus includes: a refrigerating cycle including a refrigerant passage, a compressor, and a condenser, all of which are coupled in this order, and through which a refrigerant flows in this order, the refrigerant passage being disposed inside a sample stage and through which the refrigerant flows to serve as an evaporator; first and second expansion valves which are interposed between the condenser and the refrigerant passage and between the refrigerant passage and the compressor respectively in the refrigerating cycle; a vaporizer that is interposed between the second expansion valve and the compressor in the refrigerating cycle and which heats and vaporizes the refrigerant; and a controller which regulates opening and closing of the first and second expansion valves and regulates a refrigerant heat exchange amount of the condenser or vaporizer based on a refrigerant temperature between the condenser and the second expansion valve.