SELF-ASSEMBLED NANOPARTICLES-NANOTUBE STRUCTURES BASED ON ANTENNA CHEMISTRY OF CONDUCTIVE NANORODS
    1.
    发明申请
    SELF-ASSEMBLED NANOPARTICLES-NANOTUBE STRUCTURES BASED ON ANTENNA CHEMISTRY OF CONDUCTIVE NANORODS 审中-公开
    基于导电纳米级天线化学的自组装纳米粒子纳米管结构

    公开(公告)号:US20100139946A1

    公开(公告)日:2010-06-10

    申请号:US12520627

    申请日:2007-12-20

    IPC分类号: H01B5/00 B05D5/12

    CPC分类号: B82B3/00 B82Y30/00 B82Y40/00

    摘要: The present invention relates in general to nanostructured materials and processes for making same. More particularly, the present inventions relates to a nanoscale composite structure and methods for making same involving a conductive nanorod comprising a tip at each of the nanorod extrema; and a material deposited on at the least the tips, wherein the material comprises a reduced form of a redox species, wherein the redox species is adapted for electrochemical reaction with the conductive nanorod when the conductive nanorod is stimulated as an antenna by an electric field.

    摘要翻译: 本发明一般涉及纳米结构材料及其制造方法。 更具体地说,本发明涉及一种纳米尺度复合结构及其制造方法,涉及包括在每个纳米棒极值处的尖端的导电纳米棒; 以及沉积在至少尖端上的材料,其中所述材料包含还原形式的氧化还原物质,其中当所述导电纳米棒通过电场作为天线被刺激时,所述氧化还原物质适于与所述导电纳米棒的电化学反应。

    FLOW DIELECTROPHORETIC SEPARATION OF SINGLE WALL CARBON NANOTUBES
    3.
    发明申请
    FLOW DIELECTROPHORETIC SEPARATION OF SINGLE WALL CARBON NANOTUBES 有权
    单壁碳纳米管的流动电介质分离

    公开(公告)号:US20090283405A1

    公开(公告)日:2009-11-19

    申请号:US12281444

    申请日:2007-03-02

    IPC分类号: C02F1/469

    摘要: According to some embodiments, a method for separating a first fraction of a single wall carbon nanotubes and a second fraction of single wall carbon nanotubes includes, but is not limited to: flowing a solution comprising the nanotubes into a dielectrophoresis chamber; applying a DC voltage, in combination with an AC voltage, to the dielectrophoresis chamber; and collecting a first eluent from the dielectrophoresis chamber, wherein the first eluent comprises the first fraction and is depleted of the second fraction, wherein the first and second fractions differ by at least one of conductivity, diameter, length, and combinations thereof.

    摘要翻译: 根据一些实施方案,用于分离单壁碳纳米管和第二部分单壁碳纳米管的第一部分的方法包括但不限于:将包含纳米管的溶液流动到介电电泳室中; 将DC电压与AC电压组合施加到介电电泳室; 以及从所述介电电泳腔室收集第一洗脱液,其中所述第一洗脱液包含所述第一馏分并且耗尽所述第二馏分,其中所述第一和第二馏分通过传导率,直径,长度及其组合中的至少一个而不同。

    Flow dielectrophoretic separation of single wall carbon nanotubes
    5.
    发明授权
    Flow dielectrophoretic separation of single wall carbon nanotubes 有权
    单壁碳纳米管的流动介电泳分离

    公开(公告)号:US08097141B2

    公开(公告)日:2012-01-17

    申请号:US12281444

    申请日:2007-03-02

    IPC分类号: B03C5/02

    摘要: According to some embodiments, a method for separating a first fraction of a single wall carbon nanotubes and a second fraction of single wall carbon nanotubes includes, but is not limited to: flowing a solution comprising the nanotubes into a dielectrophoresis chamber; applying a DC voltage, in combination with an AC voltage, to the dielectrophoresis chamber; and collecting a first eluent from the dielectrophoresis chamber, wherein the first eluent comprises the first fraction and is depleted of the second fraction, wherein the first and second fractions differ by at least one of conductivity, diameter, length, and combinations thereof.

    摘要翻译: 根据一些实施方案,用于分离单壁碳纳米管和第二部分单壁碳纳米管的第一部分的方法包括但不限于:将包含纳米管的溶液流动到介电电泳室中; 将DC电压与AC电压组合施加到介电电泳室; 以及从所述介电电泳腔室收集第一洗脱液,其中所述第一洗脱液包含所述第一馏分并且耗尽所述第二馏分,其中所述第一和第二馏分通过传导率,直径,长度及其组合中的至少一个而不同。

    EMBEDDED ARRAYS OF VERTICALLY ALIGNED CARBON NANOTUBE CARPETS AND METHODS FOR MAKING THEM
    7.
    发明申请
    EMBEDDED ARRAYS OF VERTICALLY ALIGNED CARBON NANOTUBE CARPETS AND METHODS FOR MAKING THEM 有权
    垂直对准碳纳米管地毯的嵌入阵列及其制备方法

    公开(公告)号:US20120107597A1

    公开(公告)日:2012-05-03

    申请号:US12297115

    申请日:2007-04-23

    摘要: According to some embodiments, the present invention provides a system and method for supporting a carbon nanotube array that involve an entangled carbon nanotube mat integral with the array, where the mat is embedded in an embedding material. The embedding material may be depositable on a carbon nanotube. A depositable material may be metallic or nonmetallic. The embedding material may be an adhesive material. The adhesive material may optionally be mixed with a metal powder. The embedding material may be supported by a substrate or self-supportive. The embedding material may be conductive or nonconductive. The system and method provide superior mechanical and, when applicable, electrical, contact between the carbon nanotubes in the array and the embedding material. The optional use of a conductive material for the embedding material provides a mechanism useful for integration of carbon nanotube arrays into electronic devices.

    摘要翻译: 根据一些实施方案,本发明提供了一种用于支撑碳纳米管阵列的系统和方法,所述碳纳米管阵列涉及与所述阵列整合的缠结碳纳米管垫,其中所述垫嵌入嵌入材料中。 嵌入材料可以沉积在碳纳米管上。 可存放材料可以是金属或非金属的。 嵌入材料可以是粘合剂材料。 粘合剂材料可以任选地与金属粉末混合。 嵌入材料可以由衬底支撑或自支撑。 嵌入材料可以是导电的或非导电的。 该系统和方法在阵列中的碳纳米管和嵌入材料之间提供优异的机械性能,并且在适用时提供电气接触。 可选地使用用于嵌入材料的导电材料提供了用于将碳纳米管阵列集成到电子器件中的机制。

    ELECTRICAL DEVICE FABRICATION FROM NANOTUBE FORMATIONS
    9.
    发明申请
    ELECTRICAL DEVICE FABRICATION FROM NANOTUBE FORMATIONS 失效
    电子设备制造从NANOTUBE FORMATIONS

    公开(公告)号:US20100140591A1

    公开(公告)日:2010-06-10

    申请号:US11910522

    申请日:2007-02-02

    IPC分类号: H01L51/10 H01L51/40

    摘要: A method for forming nanotube electrical devices, arrays of nanotube electrical devices, and device structures and arrays of device structures formed by the methods. Various methods of the present invention allow creation of semiconducting and/or conducting devices from readily grown SWNT carpets rather than requiring the preparation of a patterned growth channel and takes advantage of the self-controlling nature of these carpet heights to ensure a known and controlled channel length for reliable electronic properties as compared to the prior methods.

    摘要翻译: 用于形成纳米管电子器件的方法,纳米管电子器件的阵列,以及通过该方法形成的器件结构和器件结构的阵列。 本发明的各种方法允许从容易生长的SWNT地毯制造半导体和/或导电装置,而不需要制备图案化的生长通道,并利用这些毯子高度的自我控制性质来确保已知和受控的通道 与现有方法相比可靠的电子性能。

    In situ low energy ion doping of materials grown by CVD
    10.
    发明授权
    In situ low energy ion doping of materials grown by CVD 失效
    通过CVD生长的材料的原位低能离子掺杂

    公开(公告)号:US5354584A

    公开(公告)日:1994-10-11

    申请号:US59245

    申请日:1993-05-07

    申请人: Howard K. Schmidt

    发明人: Howard K. Schmidt

    摘要: A material growing by deposition is exposed to a low energy beam of ionized dopant. The ion beam energy is sufficient to implant the dopant in the growing surface of the material. This doping method will work well for any dopant that is substantially immobile in the material at the temperature necessary for deposition growth.

    摘要翻译: 通过沉积生长的材料暴露于电离掺杂剂的低能量束。 离子束能量足以将掺杂剂注入材料的生长表面。 该掺杂方法对于在沉积生长所需的温度下在材料中基本上不可移动的任何掺杂剂都将很好地工作。