公开(公告)号：US20110204441A1

公开(公告)日：2011-08-25

申请号：US13100449

申请日：2011-05-04

申请人： Hsueh-I Huang ,  Chien-Wen Chu ,  Cheng-Chi Lin ,  Shih-Chin Lien ,  Chin-Pen Yeh ,  Shyi-Yuan Wu

发明人： Hsueh-I Huang ,  Chien-Wen Chu ,  Cheng-Chi Lin ,  Shih-Chin Lien ,  Chin-Pen Yeh ,  Shyi-Yuan Wu

IPC分类号： H01L29/78

CPC分类号： H01L29/0847 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/7835

摘要： A lateral-double diffused MOS device is provided. The device includes: a first well having a first conductive type and a second well having a second conductive type disposed in a substrate and adjacent to each other; a drain and a source regions having the first conductive type disposed in the first and the second wells, respectively; a field oxide layer (FOX) disposed on the first well between the source and the drain regions; a gate conductive layer disposed over the second well between the source and the drain regions extending to the FOX; a gate dielectric layer between the substrate and the gate conductive layer; a doped region having the first conductive type in the first well below a portion of the gate conductive layer and the FOX connecting to the drain region. A channel region is defined in the second well between the doped region and the source region.

摘要翻译： 提供了横向双扩散MOS器件。 该装置包括：具有第一导电类型的第一阱和具有布置在衬底中并且彼此相邻的第二导电类型的第二阱; 漏极和分别设置在第一和第二阱中的具有第一导电类型的源极区域; 设置在源极和漏极区域之间的第一阱上的场氧化物层（FOX）; 设置在延伸到FOX的源极和漏极区域之间的第二阱上的栅极导电层; 在所述基板和所述栅极导电层之间的栅极介电层; 在栅极导电层的一部分下方的第一阱中具有第一导电类型的掺杂区域和连接到漏极区域的FOX。 在掺杂区域和源极区域之间的第二阱中限定沟道区域。

公开(公告)号：US08362558B2

公开(公告)日：2013-01-29

申请号：US13100449

申请日：2011-05-04

申请人： Hsueh-I Huang ,  Chien-Wen Chu ,  Cheng-Chi Lin ,  Shih-Chin Lien ,  Chin-Pen Yeh ,  Shyi-Yuan Wu

发明人： Hsueh-I Huang ,  Chien-Wen Chu ,  Cheng-Chi Lin ,  Shih-Chin Lien ,  Chin-Pen Yeh ,  Shyi-Yuan Wu

IPC分类号： H01L29/02

CPC分类号： H01L29/0847 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/7835

摘要： A lateral-double diffused MOS device is provided. The device includes: a first well having a first conductive type and a second well having a second conductive type disposed in a substrate and adjacent to each other; a drain and a source regions having the first conductive type disposed in the first and the second wells, respectively; a field oxide layer (FOX) disposed on the first well between the source and the drain regions; a gate conductive layer disposed over the second well between the source and the drain regions extending to the FOX; a gate dielectric layer between the substrate and the gate conductive layer; a doped region having the first conductive type in the first well below a portion of the gate conductive layer and the FOX connecting to the drain region. A channel region is defined in the second well between the doped region and the source region.

摘要翻译： 提供了横向双扩散MOS器件。 该装置包括：具有第一导电类型的第一阱和具有布置在衬底中并且彼此相邻的第二导电类型的第二阱; 漏极和分别设置在第一和第二阱中的具有第一导电类型的源极区域; 设置在源极和漏极区域之间的第一阱上的场氧化物层（FOX）; 设置在延伸到FOX的源极和漏极区域之间的第二阱上的栅极导电层; 在所述基板和所述栅极导电层之间的栅极介电层; 在栅极导电层的一部分下方的第一阱中具有第一导电类型的掺杂区域和连接到漏极区域的FOX。 在掺杂区域和源极区域之间的第二阱中限定沟道区域。

公开(公告)号：US08125031B2

公开(公告)日：2012-02-28

申请号：US13100449

申请日：2011-05-04

申请人： Hsueh-I Huang ,  Chien-Wen Chu ,  Cheng-Chi Lin ,  Shih-Chin Lien ,  Chin-Pen Yeh ,  Shyi-Yuan Wu

发明人： Hsueh-I Huang ,  Chien-Wen Chu ,  Cheng-Chi Lin ,  Shih-Chin Lien ,  Chin-Pen Yeh ,  Shyi-Yuan Wu

IPC分类号： H01L29/02

摘要： A lateral-double diffused MOS device is provided. The device includes: a first well having a first conductive type and a second well having a second conductive type disposed in a substrate and adjacent to each other; a drain and a source regions having the first conductive type disposed in the first and the second wells, respectively; a field oxide layer (FOX) disposed on the first well between the source and the drain regions; a gate conductive layer disposed over the second well between the source and the drain regions extending to the FOX; a gate dielectric layer between the substrate and the gate conductive layer; a doped region having the first conductive type in the first well below a portion of the gate conductive layer and the FOX connecting to the drain region. A channel region is defined in the second well between the doped region and the source region.

公开(公告)号：US08017486B2

公开(公告)日：2011-09-13

申请号：US11767205

申请日：2007-06-22

申请人： Hsueh-I Huang ,  Chien-Wen Chu ,  Cheng-Chi Lin ,  Shih-Chin Lien ,  Chin-Pen Yeh ,  Shyi-Yuan Wu

发明人： Hsueh-I Huang ,  Chien-Wen Chu ,  Cheng-Chi Lin ,  Shih-Chin Lien ,  Chin-Pen Yeh ,  Shyi-Yuan Wu

IPC分类号： H01L21/336

CPC分类号： H01L29/0847 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/7835

摘要： A lateral-double diffused MOS device is provided. The device includes: a first well having a first conductive type and a second well having a second conductive type disposed in a substrate and adjacent to each other; a drain and a source regions having the first conductive type disposed in the first and the second wells, respectively; a field oxide layer (FOX) disposed on the first well between the source and the drain regions; a gate conductive layer disposed over the second well between the source and the drain regions extending to the FOX; a gate dielectric layer between the substrate and the gate conductive layer; a doped region having the first conductive type in the first well below a portion of the gate conductive layer and the FOX connecting to the drain region. A channel region is defined in the second well between the doped region and the source region.

摘要翻译： 提供了横向双扩散MOS器件。 该装置包括：具有第一导电类型的第一阱和具有布置在衬底中并且彼此相邻的第二导电类型的第二阱; 漏极和分别设置在第一和第二阱中的具有第一导电类型的源极区域; 设置在源极和漏极区域之间的第一阱上的场氧化物层（FOX）; 设置在延伸到FOX的源极和漏极区域之间的第二阱上的栅极导电层; 在所述基板和所述栅极导电层之间的栅极介电层; 在栅极导电层的一部分下方的第一阱中具有第一导电类型的掺杂区域和连接到漏极区域的FOX。 在掺杂区域和源极区域之间的第二阱中限定沟道区域。

公开(公告)号：US20080315308A1

公开(公告)日：2008-12-25

申请号：US11767205

申请日：2007-06-22

申请人： Hsueh-I Huang ,  Chien-Wen Chu ,  Cheng-Chi Lin ,  Shih-Chin Lien ,  Chin-Pen Yeh ,  Shyi-Yuan Wu

发明人： Hsueh-I Huang ,  Chien-Wen Chu ,  Cheng-Chi Lin ,  Shih-Chin Lien ,  Chin-Pen Yeh ,  Shyi-Yuan Wu

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/0847 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/7835

摘要： A lateral-double diffused MOS device is provided. The device includes: a first well having a first conductive type and a second well having a second conductive type disposed in a substrate and adjacent to each other; a drain and a source regions having the first conductive type disposed in the first and the second wells, respectively; a field oxide layer (FOX) disposed on the first well between the source and the drain regions; a gate conductive layer disposed over the second well between the source and the drain regions extending to the FOX; a gate dielectric layer between the substrate and the gate conductive layer; a doped region having the first conductive type in the first well below a portion of the gate conductive layer and the FOX connecting to the drain region. A channel region is defined in the second well between the doped region and the source region.

摘要翻译： 提供了横向双扩散MOS器件。 该装置包括：具有第一导电类型的第一阱和具有布置在衬底中并且彼此相邻的第二导电类型的第二阱; 漏极和分别设置在第一和第二阱中的具有第一导电类型的源极区域; 设置在源极和漏极区域之间的第一阱上的场氧化物层（FOX）; 设置在延伸到FOX的源极和漏极区域之间的第二阱上的栅极导电层; 在所述基板和所述栅极导电层之间的栅极介电层; 在栅极导电层的一部分下方的第一阱中具有第一导电类型的掺杂区域和连接到漏极区域的FOX。 在掺杂区域和源极区域之间的第二阱中限定沟道区域。

公开(公告)号：US20070108520A1

公开(公告)日：2007-05-17

申请号：US11399427

申请日：2006-04-07

申请人： Cheng-Chi Lin ,  Shin Su ,  Chien-Wen Chu ,  Shih-Chin Lien ,  Chin-Pen Yeh

发明人： Cheng-Chi Lin ,  Shin Su ,  Chien-Wen Chu ,  Shih-Chin Lien ,  Chin-Pen Yeh

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/00

CPC分类号： H01L29/0847 ,  H01L29/086 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/4933 ,  H01L29/66659 ,  H01L29/7816 ,  H01L29/7835

摘要： The present invention discloses a laterally double-diffused metal oxide semiconductor transistor (LDMOS) and a method for fabricating the same. The LDMOS includes a substrate, a first well, a drain, a second well and a source. The substrate includes a first conductive dopant. The first well includes a second conductive dopant and formed in a part of the substrate, and the drain is located in the first well. The second well includes the first conductive dopant and formed in another part of the substrate, and the source located in the second well. The source includes a lightly doped region and a heavily doped region extending downwardly from a top surface of the substrate. The depth of the lightly doped region is more than the depth of the heavily doped region.

摘要翻译： 本发明公开了一种横向双扩散金属氧化物半导体晶体管（LDMOS）及其制造方法。 LDMOS包括衬底，第一阱，漏极，第二阱和源极。 衬底包括第一导电掺杂剂。 第一阱包括第二导电掺杂剂并形成在衬底的一部分中，并且漏极位于第一阱中。 第二阱包括第一导电掺杂剂并且形成在衬底的另一部分中，并且源位于第二阱中。 源包括从衬底的顶表面向下延伸的轻掺杂区域和重掺杂区域。 轻掺杂区域的深度大于重掺杂区域的深度。

公开(公告)号：US07829408B2

公开(公告)日：2010-11-09

申请号：US12429951

申请日：2009-04-24

申请人： Cheng-Chi Lin ,  Shin Su ,  Chien-Wen Chu ,  Shih-Chin Lien ,  Chin-Pen Yeh

发明人： Cheng-Chi Lin ,  Shin Su ,  Chien-Wen Chu ,  Shih-Chin Lien ,  Chin-Pen Yeh

IPC分类号： H01L21/8238

CPC分类号： H01L29/0847 ,  H01L29/086 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/4933 ,  H01L29/66659 ,  H01L29/7816 ,  H01L29/7835

摘要： The present invention discloses a laterally double-diffused metal oxide semiconductor transistor (LDMOS) and a method for fabricating the same. The LDMOS includes a substrate, a first well, a drain, a second well and a source. The substrate includes a first conductive dopant. The first well includes a second conductive dopant and formed in a part of the substrate, and the drain is located in the first well. The second well includes the first conductive dopant and formed in another part of the substrate, and the source located in the second well. The source includes a lightly doped region and a heavily doped region extending downwardly from a top surface of the substrate. The depth of the lightly doped region is more than the depth of the heavily doped region.

摘要翻译： 本发明公开了一种横向双扩散金属氧化物半导体晶体管（LDMOS）及其制造方法。 LDMOS包括衬底，第一阱，漏极，第二阱和源极。 衬底包括第一导电掺杂剂。 第一阱包括第二导电掺杂剂并形成在衬底的一部分中，并且漏极位于第一阱中。 第二阱包括第一导电掺杂剂并且形成在衬底的另一部分中，并且源位于第二阱中。 源包括从衬底的顶表面向下延伸的轻掺杂区域和重掺杂区域。 轻掺杂区域的深度大于重掺杂区域的深度。

公开(公告)号：US07525153B2

公开(公告)日：2009-04-28

申请号：US11399427

申请日：2006-04-07

申请人： Cheng-Chi Lin ,  Shin Su ,  Chien-Wen Chu ,  Shih-Chin Lien ,  Chin-Pen Yeh

发明人： Cheng-Chi Lin ,  Shin Su ,  Chien-Wen Chu ,  Shih-Chin Lien ,  Chin-Pen Yeh

IPC分类号： H01L29/94

CPC分类号： H01L29/0847 ,  H01L29/086 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/4933 ,  H01L29/66659 ,  H01L29/7816 ,  H01L29/7835

摘要： The present invention discloses a laterally double-diffused metal oxide semiconductor transistor (LDMOS) and a method for fabricating the same. The LDMOS includes a substrate, a first well, a drain, a second well and a source. The substrate includes a first conductive dopant. The first well includes a second conductive dopant and formed in a part of the substrate, and the drain is located in the first well. The second well includes the first conductive dopant and formed in another part of the substrate, and the source located in the second well. The source includes a lightly doped region and a heavily doped region extending downwardly from a top surface of the substrate. The depth of the lightly doped region is more than the depth of the heavily doped region.

摘要翻译： 本发明公开了一种横向双扩散金属氧化物半导体晶体管（LDMOS）及其制造方法。 LDMOS包括衬底，第一阱，漏极，第二阱和源极。 衬底包括第一导电掺杂剂。 第一阱包括第二导电掺杂剂并形成在衬底的一部分中，并且漏极位于第一阱中。 第二阱包括第一导电掺杂剂并且形成在衬底的另一部分中，并且源位于第二阱中。 源包括从衬底的顶表面向下延伸的轻掺杂区域和重掺杂区域。 轻掺杂区域的深度大于重掺杂区域的深度。

公开(公告)号：US08482066B2

公开(公告)日：2013-07-09

申请号：US13225189

申请日：2011-09-02

申请人： Chien-Wen Chu ,  Wing-Chor Chan ,  Shyi-Yuan Wu

发明人： Chien-Wen Chu ,  Wing-Chor Chan ,  Shyi-Yuan Wu

IPC分类号： H01L31/119

CPC分类号： H01L29/7816 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1087 ,  H01L29/42368 ,  H01L29/7393 ,  H01L29/7394 ,  H01L29/7824

摘要： A semiconductor device and a manufacturing method for the same are provided. The semiconductor device comprises a first doped region, a second doped region, a dielectric structure and a gate structure. The first doped region has a first type conductivity. The second doped region has a second type conductivity opposite to the first type conductivity and is adjacent to the first doped region. The dielectric structure comprises a first dielectric portion and a second dielectric portion separated from each other. The dielectric structure is formed on the first doped region. The gate structure is on a part of the first doped region or second doped region adjacent to the first dielectric portion.

摘要翻译： 提供了一种半导体器件及其制造方法。 半导体器件包括第一掺杂区，第二掺杂区，电介质结构和栅极结构。 第一掺杂区域具有第一类型的导电性。 第二掺杂区域具有与第一类型导电性相反的第二类型导电性，并且与第一掺杂区域相邻。 电介质结构包括彼此分离的第一电介质部分和第二电介质部分。 电介质结构形成在第一掺杂区域上。 栅极结构位于与第一电介质部分相邻的第一掺杂区域或第二掺杂区域的一部分上。

公开(公告)号：US09029950B2

公开(公告)日：2015-05-12

申请号：US13425221

申请日：2012-03-20

申请人： Chien-Wen Chu ,  Wing-Chor Chan ,  Shyi-Yuan Wu

发明人： Chien-Wen Chu ,  Wing-Chor Chan ,  Shyi-Yuan Wu

IPC分类号： H01L21/84 ,  H01L27/12 ,  H01L29/78

CPC分类号： H01L29/7816

摘要： A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises a substrate, a first source/drain region, a second source/drain region, a first stack structure and a second stack structure. The first source/drain region is formed in the substrate. The second source/drain region is formed in the substrate. The first stack structure is on the substrate between the first source/drain region and the second source/drain region. The first stack structure comprises a first dielectric layer and a first conductive layer on the first dielectric layer. The second stack structure is on the first stack structure. The second stack structure comprises a second dielectric layer and a second conductive layer on the second dielectric layer.

摘要翻译： 提供半导体结构及其形成方法。 半导体结构包括衬底，第一源极/漏极区域，第二源极/漏极区域，第一堆叠结构和第二堆叠结构。 第一源极/漏极区域形成在衬底中。 第二源极/漏极区域形成在衬底中。 第一堆叠结构在第一源极/漏极区域和第二源极/漏极区域之间的衬底上。 第一堆叠结构包括第一介电层和第一介电层上的第一导电层。 第二个堆栈结构是第一个堆叠结构。 第二堆叠结构包括第二电介质层和第二电介质层上的第二导电层。