公开(公告)号：US20190067564A1

公开(公告)日：2019-02-28

申请号：US16102522

申请日：2018-08-13

Applicant: IMEC vzw

Inventor： Johan Swerts ,  Kiroubanand Sankaran ,  Tsann Lin ,  Geoffrey Pourtois

IPC: H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  G11C11/16 ,  H01L27/22

Abstract: The disclosed technology generally relates to magnetic memory devices, and more particularly to spin transfer torque magnetic random access memory (STT-MRAM) devices having a magnetic tunnel junction (MTJ), and further relates to methods of fabricating the STT-MRAM devices. In an aspect, a magnetoresistive random access memory (MRAM) device has a magnetic tunnel junction (MTJ). The MTJ includes a magnetic reference layer comprising CoFeB, a magnetic free layer comprising CoFeB, and a barrier layer comprising MgO. The barrier layer is interposed between the magnetic reference layer and the magnetic free layer. The barrier layer has a thickness adapted to tunnel electrons between the magnetic reference layer and the magnetic free layer sufficient to cause a change in the magnetization direction of the variable magnetization under a bias. The MTJ further comprises a buffer layer comprising one or more of Co, Fe, CoFe and CoFeB, where the buffer layer is doped with one or both of C and N.

公开(公告)号：US20190189915A1

公开(公告)日：2019-06-20

申请号：US16206855

申请日：2018-11-30

Applicant: IMEC vzw

Inventor： Tsann Lin ,  Johan Swerts

IPC: H01L43/12 ,  H01L43/10 ,  H01L43/08 ,  H01L43/02

CPC classification number: H01L43/12 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H03K19/18 ,  H03K19/23

Abstract: The disclosed technology generally relates semiconductor devices, and relates more particularly to a spin transfer torque device, a method of operating the spin-transfer torque device and a method of fabricating the spin-transfer torque device. According to one aspect, a spin-transfer torque device includes a magnetic flux guide layer and a set of magnetic tunnel junction (MTJ) pillars arranged above the magnetic flux guide layer. Each one of the pillars includes a separate free layer, a separate tunnel barrier layer and a separate reference layer. A coupling layer is arranged between the magnetic flux guide layer and the MTJ pillars, wherein a magnetization of the separate free layer of each of the each of the MTJ pillars is coupled, parallel or antiparallel, to a magnetization of the magnetic flux guide layer through the coupling layer.

公开(公告)号：US11177433B2

公开(公告)日：2021-11-16

申请号：US16206855

申请日：2018-11-30

Applicant: IMEC vzw

Inventor： Tsann Lin ,  Johan Swerts

IPC: H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L43/02 ,  H03K19/23 ,  H03K19/18

Abstract: The disclosed technology generally relates semiconductor devices, and relates more particularly to a spin transfer torque device, a method of operating the spin-transfer torque device and a method of fabricating the spin-transfer torque device. According to one aspect, a spin-transfer torque device includes a magnetic flux guide layer and a set of magnetic tunnel junction (MTJ) pillars arranged above the magnetic flux guide layer. Each one of the pillars includes a separate free layer, a separate tunnel barrier layer and a separate reference layer. A coupling layer is arranged between the magnetic flux guide layer and the MTJ pillars, wherein a magnetization of the separate free layer of each of the each of the MTJ pillars is coupled, parallel or antiparallel, to a magnetization of the magnetic flux guide layer through the coupling layer.

公开(公告)号：US10050192B2

公开(公告)日：2018-08-14

申请号：US15373342

申请日：2016-12-08

Applicant: IMEC VZW

Inventor： Johan Swerts ,  Kiroubanand Sankaran ,  Tsann Lin ,  Geoffrey Pourtois

IPC: H01L43/08 ,  H01L27/22 ,  G11C11/16 ,  H01L43/10 ,  H01L43/12

Abstract: The disclosed technology generally relates to magnetic memory devices, and more particularly to spin transfer torque magnetic random access memory (STT-MRAM) devices having a magnetic tunnel junction (MTJ), and further relates to methods of fabricating the STT-MRAM devices. In an aspect, a magnetoresistive random access memory (MRAM) device has a magnetic tunnel junction (MTJ). The MTJ includes a magnetic reference layer including CoFeB, a magnetic free layer comprising CoFeB, and a barrier layer including MgO. The barrier layer is interposed between the magnetic reference layer and the magnetic free layer. The barrier layer has a thickness adapted to tunnel electrons between the magnetic reference layer and the magnetic free layer sufficient to cause a change in the magnetization direction of the variable magnetization under a bias. The MTJ further comprises a buffer layer comprising one or more of Co, Fe, CoFe and CoFeB, where the buffer layer is doped with one or both of C and N.

公开(公告)号：US20170170390A1

公开(公告)日：2017-06-15

申请号：US15373342

申请日：2016-12-08

Applicant: IMEC VZW

Inventor： Johan Swerts ,  Kiroubanand Sankaran ,  Tsann Lin ,  Geoffrey Pourtois

IPC: H01L43/08 ,  H01L27/22

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C2211/5615 ,  H01L27/222 ,  H01L43/10 ,  H01L43/12

Abstract: The disclosed technology generally relates to magnetic memory devices, and more particularly to spin transfer torque magnetic random access memory (STT-MRAM) devices having a magnetic tunnel junction (MTJ), and further relates to methods of fabricating the STT-MRAM devices. In an aspect, a magnetoresistive random access memory (MRAM) device has a magnetic tunnel junction (MTJ). The MTJ includes a magnetic reference layer comprising CoFeB, a magnetic free layer comprising CoFeB, and a barrier layer comprising MgO. The barrier layer is interposed between the magnetic reference layer and the magnetic free layer. The barrier layer has a thickness adapted to tunnel electrons between the magnetic reference layer and the magnetic free layer sufficient to cause a change in the magnetization direction of the variable magnetization under a bias. The MTJ further comprises a buffer layer comprising one or more of Co, Fe, CoFe and CoFeB, where the buffer layer is doped with one or both of C and N.