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    Semiconductor fin structure and method of fabricating the same
    2.
    发明授权
    Semiconductor fin structure and method of fabricating the same 有权

    公开(公告)号：US11387350B2

    公开(公告)日：2022-07-12

    申请号：US16719852

    申请日：2019-12-18

    Applicant: IMEC vzw

    Inventor： Geert Eneman ,  Bartlomiej Pawlak ,  Liesbeth Witters ,  Geoffrey Pourtois

    IPC: H01L29/66 ,  H01L21/8234 ,  H01L21/84 ,  H01L29/161 ,  H01L29/78

    Abstract: According to one aspect, a method of fabricating a semiconductor structure includes cutting a semiconductor fin extending along a substrate. Cutting the semiconductor fin can comprise forming a fin cut mask. The fin cut mask can define a number of masked regions and a number of cut regions. The method can include cutting the fin into a number of fin parts by etching the fin in the cut regions. The method can further comprise forming an epitaxial semiconductor capping layer on the fin prior to forming the fin cut mask or on the fin parts subsequent to cutting the fin. A capping layer material and a fin material can be lattice mismatched. According to another aspect, a corresponding semiconductor structure comprises fin parts.

    Spin torque majority gate device
    4.
    发明授权
    Spin torque majority gate device 有权

    公开(公告)号：US09979402B2

    公开(公告)日：2018-05-22

    申请号：US15586165

    申请日：2017-05-03

    Applicant: IMEC VZW ,  Katholieke Universiteit Leuven

    Inventor： Adrien Vaysset ,  Iuliana Radu ,  Geoffrey Pourtois

    IPC: H03K19/23 ,  H03K19/18 ,  H01L43/08

    CPC classification number: H03K19/23 ,  H01L43/08 ,  H03K19/18

    Abstract: The disclosed technology generally relates to magnetic devices and more particularly to spin torque majority gate devices, and to methods of operating such devices. In one aspect, a majority gate device comprises a free ferromagnetic layer comprising 3N input zones and an output zone. The output zone has a polygon shape having 3N sides, where each input zone adjoins the output zone. The input zones are arranged around the output zone according to a 3N-fold rotational symmetry, where N is a positive integer greater than 0. The input zones are spaced apart from one another by the output zone. The majority gate device additionally comprises a plurality of input controls, where each of the input zones is magnetically coupled to a corresponding one of the plurality of input controls, where each of the input controls is configured to control the magnetization state of the corresponding input zone. The majority gate device further comprises an output sensor magnetically coupled to the output zone, where the output sensor is adapted for sensing the magnetization state of the output zone. Each input zones adjoins the output zone at one of the 3N sides.

    SPIN TORQUE MAJORITY GATE DEVICE
    5.
    发明申请
    SPIN TORQUE MAJORITY GATE DEVICE 有权

    公开(公告)号：US20170302280A1

    公开(公告)日：2017-10-19

    申请号：US15586165

    申请日：2017-05-03

    Applicant: IMEC VZW ,  Katholieke Universiteit Leuven

    Inventor： Adrien Vaysset ,  luliana Radu ,  Geoffrey Pourtois

    IPC: H03K19/23 ,  H03K19/18 ,  H01L43/08

    CPC classification number: H03K19/23 ,  H01L43/08 ,  H03K19/18

    Abstract: The disclosed technology generally relates to magnetic devices and more particularly to spin torque majority gate devices, and to methods of operating such devices. In one aspect, a majority gate device comprises a free ferromagnetic layer comprising 3N input zones and an output zone. The output zone has a polygon shape having 3N sides, where each input zone adjoins the output zone. The input zones are arranged around the output zone according to a 3N-fold rotational symmetry, where N is a positive integer greater than 0. The input zones are spaced apart from one another by the output zone. The majority gate device additionally comprises a plurality of input controls, where each of the input zones is magnetically coupled to a corresponding one of the plurality of input controls, where each of the input controls is configured to control the magnetization state of the corresponding input zone. The majority gate device further comprises an output sensor magnetically coupled to the output zone, where the output sensor is adapted for sensing the magnetization state of the output zone. Each input zones adjoins the output zone at one of the 3N sides.

    METHOD FOR TRANSFERING A GRAPHENE LAYER
    6.
    发明申请
    METHOD FOR TRANSFERING A GRAPHENE LAYER 有权
    转移石墨层的方法

    公开(公告)号：US20150079399A1

    公开(公告)日：2015-03-19

    申请号：US14486678

    申请日：2014-09-15

    Applicant: IMEC VZW

    Inventor： Cedric Huyghebaert ,  Philippe M. Vereecken ,  Geoffrey Pourtois

    IPC: C01B31/04 ,  B32B38/00 ,  B32B37/00

    CPC classification number: C25F5/00 ,  B32B37/025 ,  B32B38/0008 ,  C01B32/19 ,  C01B32/194 ,  H01L21/187 ,  Y10T428/30

    Abstract: A method for transferring a graphene layer from a metal substrate to a second substrate is provided comprising: providing a graphene layer on the metal substrate, adsorbing hydrogen atoms on the metal substrate by passing protons through the graphene layer, treating the metal substrate having adsorbed hydrogen atoms thereon in such a way as to form hydrogen gas from the adsorbed hydrogen atoms, thereby detaching the graphene layer from the metal substrate, transferring the graphene layer to the second substrate, and optionally reusing the metal substrate by repeating the aforementioned steps.

    Abstract translation: 提供一种将石墨烯层从金属基板转移到第二基板的方法，包括：在金属基板上提供石墨烯层，通过使质子通过石墨烯层吸附金属基板上的氢原子，处理具有吸附氢的金属基板 从而从吸附的氢原子形成氢气，从而从石墨烯衬底分离石墨烯层，将石墨烯层转移到第二衬底，以及通过重复上述步骤任选重新使用金属衬底。

    MIXED METAL OXIDE
    7.
    发明申请
    MIXED METAL OXIDE 有权

    公开(公告)号：US20230010899A1

    公开(公告)日：2023-01-12

    申请号：US17810548

    申请日：2022-07-01

    Applicant: IMEC VZW

    Inventor： Michiel Jan van Setten ,  Hendrik F.W Dekkers ,  Karl Opsomer ,  Geoffrey Pourtois ,  Gouri Sankar Kar

    IPC: H01L29/24 ,  C01G9/00 ,  C01G15/00 ,  H01L29/786 ,  H01L21/02

    Abstract: In an aspect, a mixed metal oxide comprises or consists essentially of: a mixture comprises or consisting essentially of 0.30 to 0.69 parts by mole Mg, 0.20 to 0.69 parts by mole Zn, 0.01 to 0.30 parts by mole of a third element selected from Al and Ga, and, either, when the third element is Al, 0.00 to 0.31 parts by mole of other elements selected from metals and metalloids, or, when the third element is Ga, 0.00 to 0.15 parts by mole of other elements selected from metals and metalloids, wherein the sum of all parts by mole of Mg, Zn, the third element, and the other elements amounts to 1.00, wherein the amount in parts by mole of the other elements is lower than the amount in parts by mole of Mg and is lower than the amount in parts by mole of Zn; oxygen; and less than 0.01 parts by mole of non-metallic and non-metalloid impurities.

    MIXED METAL OXIDES
    10.
    发明公开
    MIXED METAL OXIDES 审中-公开

    公开(公告)号：US20230382758A1

    公开(公告)日：2023-11-30

    申请号：US18325823

    申请日：2023-05-30

    Applicant: IMEC VZW

    Inventor： Michiel Jan van Setten ,  Geoffrey Pourtois ,  Hendrik F.W. Dekkers ,  Gouri Sankar Kar

    IPC: C01G30/00 ,  H01L29/786

    CPC classification number: C01G30/005 ,  H01L29/78693 ,  C01P2002/02

    Abstract: Mixed metal oxides and methods for making the mixed metal oxides are disclosed. A mixed metal oxide includes metal or metalloid elements including 0.50 to 0.90 parts by mole Mg, 0.05 to 0.30 parts by mole Al, 0.01 to 0.20 parts by mole Sb, and 0.00 to 0.31 parts by mole of other elements selected from metals and metalloids. The sum of all parts by mole of Mg, Al, Sb, and the other elements selected from metals and metalloids may amount to about 1.00. The mixed metal oxide additionally includes oxygen, and less than 0.01 parts by mole of non-metallic and non-metalloid impurities.

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