公开(公告)号：US09275926B2

公开(公告)日：2016-03-01

申请号：US13886284

申请日：2013-05-03

Applicant: Infineon Technologies AG

Inventor： Wolfram Hable ,  Andreas Grassmann ,  Frank Winter ,  Ottmar Geitner ,  Alexander Schwarz ,  Alexander Herbrandt ,  Lothar Koenig ,  Andre Uhlemann

IPC: H01L23/34 ,  H01L21/50 ,  H01L23/00 ,  H01L23/373 ,  H01L23/433 ,  H01L23/467 ,  H01L23/473 ,  H01L25/07

CPC classification number: H01L23/34 ,  H01L21/50 ,  H01L23/3735 ,  H01L23/4334 ,  H01L23/467 ,  H01L23/473 ,  H01L24/33 ,  H01L24/36 ,  H01L24/40 ,  H01L25/072 ,  H01L2224/40137 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/37099 ,  H01L2224/37599

Abstract: According to an exemplary embodiment, a power module is provided which comprises a semiconductor chip, a bonding substrate comprising an electrically conductive sheet and an electric insulator sheet which is directly attached to the electrically conductive sheet and which is thermally coupled to the semiconductor chip, and an array of cooling structures directly attached to the electrically conductive sheet and configured for removing heat from the semiconductor chip when interacting with cooling fluid.

Abstract translation: 根据示例性实施例，提供了一种功率模块，其包括半导体芯片，包括导电片的接合衬底和直接附接到导电片并且热耦合到半导体芯片的电绝缘片，以及 直接连接到导电片的冷却结构的阵列，并被配置为当与冷却流体相互作用时从半导体芯片移除热量。

公开(公告)号：US20200183056A1

公开(公告)日：2020-06-11

申请号：US16704873

申请日：2019-12-05

Applicant: Infineon Technologies AG

Inventor： Ivan Nikitin ,  Dirk Ahlers ,  Andreas Grassmann ,  Andre Uhlemann

IPC: G02B1/118 ,  H05K3/40

Abstract: A power semiconductor module includes a first substrate, wherein the first substrate includes aluminum, a first aluminum oxide layer arranged on the first substrate, a conductive layer arranged on the first aluminum oxide layer, a first semiconductor chip, wherein the first semiconductor chip is arranged on the conductive layer and is electrically connected thereto, and an electrical insulation material enclosing the first semiconductor chip, wherein the first aluminum oxide layer is configured to electrically insulate the first semiconductor chip from the first substrate.

公开(公告)号：US09731370B2

公开(公告)日：2017-08-15

申请号：US13873599

申请日：2013-04-30

Applicant: Infineon Technologies AG

Inventor： Andre Uhlemann ,  Alexander Herbrandt

IPC: H01L23/367 ,  H01L23/00 ,  B23K9/04 ,  H01L23/373 ,  H01L23/433 ,  H01L23/473 ,  H01L21/48 ,  B23K101/40

CPC classification number: B23K9/042 ,  B23K2101/40 ,  H01L21/4871 ,  H01L23/3677 ,  H01L23/3735 ,  H01L23/4334 ,  H01L23/473 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/29101 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/00 ,  H01L2924/014

Abstract: A semiconductor module includes a substrate having a metallized first side and a metallized second side opposing the metallized first side. A semiconductor die is attached to the metallized first side of the substrate. A plurality of cooling structures are welded to the metallized second side of the substrate. Each of the cooling structures includes a plurality of distinct weld beads disposed in a stacked arrangement extending away from the substrate. The substrate can be electrically conductive or insulating. Corresponding methods of manufacturing such semiconductor modules and substrates with such welded cooling structures are also provided.

公开(公告)号：US20140327127A1

公开(公告)日：2014-11-06

申请号：US13886284

申请日：2013-05-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Wolfram HABLE ,  Andreas Grassmann ,  Frank Winter ,  Ottmar Geitner ,  Alexander Schwarz ,  Alexander Herbrandt ,  Lothar Koenig ,  Andre Uhlemann

IPC: H01L23/34 ,  H01L21/50

CPC classification number: H01L23/34 ,  H01L21/50 ,  H01L23/3735 ,  H01L23/4334 ,  H01L23/467 ,  H01L23/473 ,  H01L24/33 ,  H01L24/36 ,  H01L24/40 ,  H01L25/072 ,  H01L2224/40137 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/37099 ,  H01L2224/37599

Abstract: According to an exemplary embodiment, a power module is provided which comprises a semiconductor chip, a bonding substrate comprising an electrically conductive sheet and an electric insulator sheet which is directly attached to the electrically conductive sheet and which is thermally coupled to the semiconductor chip, and an array of cooling structures directly attached to the electrically conductive sheet and configured for removing heat from the semiconductor chip when interacting with cooling fluid.

Abstract translation: 根据示例性实施例，提供了一种功率模块，其包括半导体芯片，包括导电片的接合衬底和直接附接到导电片并且热耦合到半导体芯片的电绝缘片，以及 直接连接到导电片的冷却结构的阵列，并被配置为当与冷却流体相互作用时从半导体芯片移除热量。

公开(公告)号：US20220278070A1

公开(公告)日：2022-09-01

申请号：US17676350

申请日：2022-02-21

Applicant: Infineon Technologies AG

Inventor： Andre Uhlemann ,  Christoph Koch

IPC: H01L23/00

Abstract: An external contact element for a power semiconductor module includes a bonded blank strip, the bonded blank strip being formed such that the external contact element includes: a first contact portion configured to be coupled to the power semiconductor module by a first solder joint, a second contact portion spaced from the first contact portion in a thickness direction out of the plane of the first contact portion, the second contact portion being configured to be coupled to an external appliance, and a spring portion connecting the first and second contact portions to each other and configured to compensate a movement along the thickness direction. The bonded blank strip includes a first sheet of a first metal or first metal alloy and a second sheet of a different second metal or second metal alloy. The second sheet is omitted from at least a substantial part of the first contact portion.

公开(公告)号：US20210006062A1

公开(公告)日：2021-01-07

申请号：US16919518

申请日：2020-07-02

Applicant: Infineon Technologies AG

Inventor： Michael Schlueter ,  Andre Uhlemann

IPC: H02H9/00 ,  H03K17/16 ,  H03K17/0814

Abstract: A snubber circuit includes a snubber substrate including an electrically insulating carrier and an electrically conducting structured layer applied thereon, the electrically conducting structured layer including two segments. The snubber circuit fuither includes two electrically resistive layers, each resistive layer being applied onto the two segments of the electrically conducting structured layer of the snubber substrate, and a capacitor disposed on the electrically resistive layers and having two terminals, each terminal being electrically connected to one of the electrically resistive layers. Further, a power semiconductor module having such a snubber circuit is disclosed.

公开(公告)号：US09578789B2

公开(公告)日：2017-02-21

申请号：US14282556

申请日：2014-05-20

Applicant: Infineon Technologies AG

Inventor： Andre Uhlemann ,  Thorsten Fath

IPC: H05K7/20 ,  H01L23/367 ,  H02M7/00 ,  H01L23/473

CPC classification number: H05K7/20927 ,  H01L23/3672 ,  H01L23/473 ,  H01L2924/0002 ,  H02M7/003 ,  Y10T29/41 ,  H01L2924/00

Abstract: A power semiconductor module includes a substrate and a two-part cooling system arranged under the substrate. The cooling system has upper and lower pieces. The upper piece forms a flow channel with the substrate for a cooling liquid. The upper piece has a first inflow and an outflow, through which the cooling liquid can be introduced into the flow channel and removed. The upper piece also has at least one second inflow, which is spaced apart from the first inflow in a longitudinal direction. The lower piece has an inlet and an outlet, the outlet being connected to the outflow and the inlet being connected to the first inflow. The lower piece also has a channel branching off from the inlet, which includes at least one bypass channel, which is connected to the second inflow, so part of the cooling liquid passes through the bypass channel into the flow channel.

Abstract translation: 功率半导体模块包括基板和布置在基板下方的两部分冷却系统。 冷却系统具有上下部件。 上部件与用于冷却液体的基板形成流动通道。 上部件具有第一流入和流出，冷却液可通过该第一流入和流出流入流动通道并被移除。 上部件还具有至少一个第二流入件，其沿着纵向方向与第一流入物间隔开。 下部件具有入口和出口，出口连接到流出口，入口连接到第一流入口。 下部件还具有从入口分支的通道，该通道包括至少一个旁通通道，其连接到第二流入口，因此部分冷却液体通过旁路通道进入流动通道。

公开(公告)号：US20230317560A1

公开(公告)日：2023-10-05

申请号：US18122817

申请日：2023-03-17

Applicant: Infineon Technologies AG

Inventor： Andre Uhlemann

IPC: H01L23/473 ,  H01L23/049 ,  H01L23/31 ,  H01L23/373 ,  H01L25/065

CPC classification number: H01L23/473 ,  H01L23/049 ,  H01L23/315 ,  H01L23/3735 ,  H01L25/0655

Abstract: A power semiconductor module includes a carrier comprising a first side and an opposite second side, a power semiconductor die arranged at the first side of the carrier, and a housing arranged at least partially on the second side of the carrier and forming a joining site for a cooler on the second side. The joining site completely surrounds an inner portion of the second side of the carrier. The inner portion is configured to be in direct contact with a cooling fluid within the cooler.

公开(公告)号：US11631974B2

公开(公告)日：2023-04-18

申请号：US16919518

申请日：2020-07-02

Applicant: Infineon Technologies AG

Inventor： Michael Schlueter ,  Andre Uhlemann

IPC: H02H9/00 ,  H03K17/0814 ,  H03K17/16 ,  H05K1/16 ,  H03K19/0185 ,  H01L29/16

Abstract: A snubber circuit includes a snubber substrate including an electrically insulating carrier and an electrically conducting structured layer applied thereon, the electrically conducting structured layer including two segments. The snubber circuit further includes two electrically resistive layers, each resistive layer being applied onto the two segments of the electrically conducting structured layer of the snubber substrate, and a capacitor disposed on the electrically resistive layers and having two terminals, each terminal being electrically connected to one of the electrically resistive layers. Further, a power semiconductor module having such a snubber circuit is disclosed.

公开(公告)号：US20170304922A1

公开(公告)日：2017-10-26

申请号：US15646127

申请日：2017-07-11

Applicant: Infineon Technologies AG

Inventor： Andre Uhlemann ,  Alexander Herbrandt

IPC: B23K9/04 ,  H01L23/367 ,  H01L23/373 ,  H01L23/433 ,  H01L21/48 ,  H01L23/473 ,  B23K101/40 ,  H01L23/00

CPC classification number: B23K9/042 ,  B23K2101/40 ,  H01L21/4871 ,  H01L23/3677 ,  H01L23/3735 ,  H01L23/4334 ,  H01L23/473 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/29101 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/00 ,  H01L2924/014

Abstract: A semiconductor module includes a substrate having a metallized first side and a metallized second side opposing the metallized first side. A semiconductor die is attached to the metallized first side of the substrate. A plurality of cooling structures are welded to the metallized second side of the substrate. Each of the cooling structures includes a plurality of distinct weld beads disposed in a stacked arrangement extending away from the substrate. The substrate can be electrically conductive or insulating. Corresponding methods of manufacturing such semiconductor modules and substrates with such welded cooling structures are also provided.