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    Inexpensive electrode materials to facilitate rutile phase titanium oxide
    2.
    发明申请
    Inexpensive electrode materials to facilitate rutile phase titanium oxide 审中-公开

    公开(公告)号：US20130037913A1

    公开(公告)日：2013-02-14

    申请号：US13655653

    申请日：2012-10-19

    Applicant: INTERMOLECULAR INC.

    Inventor： Hanhong Chen ,  Toshiyuki Hirota ,  Pragati KUMAR ,  Xiangxin Rui ,  Sunil Shanker

    IPC: H01L29/02

    CPC classification number: H01L28/60 ,  C23C16/405 ,  H01L27/10852 ,  H01L28/40

    Abstract: This disclosure provides a method of fabricating a semiconductor stack and associated device, such as a capacitor and DRAM cell. In particular, a bottom electrode has a material selected for lattice matching characteristics. This material may be created from a relatively inexpensive metal oxide which is processed to adopt a conductive, but difficult-to-produce oxide state, with specific crystalline form; to provide one example, specific materials are disclosed that are compatible with the growth of rutile phase titanium dioxide (TiO2) for use as a dielectric, thereby leading to predictable and reproducible higher dielectric constant and lower effective oxide thickness and, thus, greater part density at lower cost.

    Inexpensive Electrode Materials to Facilitate Rutile Phase Titanium Oxide
    3.
    发明申请
    Inexpensive Electrode Materials to Facilitate Rutile Phase Titanium Oxide 有权
    廉价的电极材料促进金红石相氧化钛

    公开(公告)号：US20130072015A1

    公开(公告)日：2013-03-21

    申请号：US13675852

    申请日：2012-11-13

    Applicant: Intermolecular, Inc.

    Inventor： Hanhong Chen ,  Toshiyuki Hirota ,  Pragati Kumar ,  Xiangxin Rui ,  Sunil Shanker

    IPC: H01L21/285

    CPC classification number: H01L28/60 ,  C23C16/405 ,  H01L27/10852 ,  H01L28/40

    Abstract: This disclosure provides a method of fabricating a semiconductor stack and associated device, such as a capacitor and DRAM cell. In particular, a bottom electrode has a material selected for lattice matching characteristics. This material may be created from a relatively inexpensive metal oxide which is processed to adopt a conductive, but difficult-to-produce oxide state, with specific crystalline form; to provide one example, specific materials are disclosed that are compatible with the growth of rutile phase titanium dioxide (TiO2) for use as a dielectric, thereby leading to predictable and reproducible higher dielectric constant and lower effective oxide thickness and, thus, greater part density at lower cost.

    Abstract translation: 本公开提供了制造半导体堆叠和相关设备（诸如电容器和DRAM单元）的方法。 特别地，底部电极具有选择用于晶格匹配特性的材料。 该材料可以由相对廉价的金属氧化物制成，其被处理成具有特定结晶形式的导电但难以产生的氧化物状态; 为了提供一个实例，公开了与用作电介质的金红石相二氧化钛（TiO 2）的生长相容的具体材料，从而导致可预测和可再现的较高介电常数和较低的有效氧化物厚度，因此更大的部分密度 以较低的成本。

    Inexpensive electrode materials to facilitate rutile phase titanium oxide
    4.
    发明授权
    Inexpensive electrode materials to facilitate rutile phase titanium oxide 有权
    廉价的电极材料，以促进金红石相氧化钛

    公开(公告)号：US08980744B2

    公开(公告)日：2015-03-17

    申请号：US13675852

    申请日：2012-11-13

    Applicant: Intermolecular, Inc.

    Inventor： Hanhong Chen ,  Toshiyuki Hirota ,  Pragati Kumar ,  Xiangxin Rui ,  Sunil Shanker

    IPC: H01L27/108 ,  H01L49/02 ,  C23C16/40

    CPC classification number: H01L28/60 ,  C23C16/405 ,  H01L27/10852 ,  H01L28/40

    Abstract: This disclosure provides a method of fabricating a semiconductor stack and associated device, such as a capacitor and DRAM cell. In particular, a bottom electrode has a material selected for lattice matching characteristics. This material may be created from a relatively inexpensive metal oxide which is processed to adopt a conductive, but difficult-to-produce oxide state, with specific crystalline form; to provide one example, specific materials are disclosed that are compatible with the growth of rutile phase titanium dioxide (TiO2) for use as a dielectric, thereby leading to predictable and reproducible higher dielectric constant and lower effective oxide thickness and, thus, greater part density at lower cost.

    Abstract translation: 本公开提供了制造半导体堆叠和相关设备（诸如电容器和DRAM单元）的方法。 特别地，底部电极具有选择用于晶格匹配特性的材料。 该材料可以由相对廉价的金属氧化物制成，其被处理成具有特定结晶形式的导电但难以产生的氧化物状态; 为了提供一个实例，公开了与用作电介质的金红石相二氧化钛（TiO 2）的生长相容的具体材料，从而导致可预测和可再现的较高介电常数和较低的有效氧化物厚度，因此更大的部分密度 以较低的成本。

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