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34 条记录 (耗时 0.039 秒)

    Lapping carrier for use in fabricating sliders
    5.
    发明授权
    Lapping carrier for use in fabricating sliders 失效
    用于制造滑块的研磨载体

    公开(公告)号：US06736704B2

    公开(公告)日：2004-05-18

    申请号：US10414913

    申请日：2003-04-16

    申请人： Leo E. Kennedy ,  Oh-Hun Kwon ,  Matthew A. Simpson ,  Stanley C. Smith

    发明人： Leo E. Kennedy ,  Oh-Hun Kwon ,  Matthew A. Simpson ,  Stanley C. Smith

    IPC分类号： B24B100

    CPC分类号： B24B37/30 ,  B24B37/048 ,  C04B35/488

    摘要： A lapping carrier for machining a row of magneto-resistive elements is disclosed. The lapping carrier includes a plurality of movable elements, the movable elements terminating at an outer surface to form a generally planar mounting surface for a row of magneto-resistive elements. The lapping carrier is formed of a ceramic material. A method for lapping or machining a row of magneto-resistive elements is also disclosed.

    摘要翻译： 公开了用于加工一排磁阻元件的研磨载体。 研磨载体包括多个可移动元件，可移动元件终止于外表面以形成用于一排磁阻元件的大致平面的安装表面。 研磨载体由陶瓷材料形成。 还公开了一种用于研磨或加工一排磁阻元件的方法。

    Electrostatic chuck and method of forming
    7.
    发明授权
    Electrostatic chuck and method of forming 有权
    静电吸盘及成型方法

    公开(公告)号：US07983017B2

    公开(公告)日：2011-07-19

    申请号：US11960344

    申请日：2007-12-19

    申请人： Matthew A. Simpson

    发明人： Matthew A. Simpson

    IPC分类号： H01L21/31 ,  H02N13/00

    CPC分类号： H01L21/6833 ,  H02N13/00 ,  Y10T29/49117 ,  Y10T279/23

    摘要： A Coulombic electrostatic chuck is disclosed which includes a substrate, a conductive layer overlying the substrate, and an arc elimination layer overlying the conductive layer. The electrostatic chuck further includes a high-k dielectric layer overlying the arc elimination layer, wherein the high-k dielectric layer has a dielectric constant of not less than about 10 and a resistivity of not less than about 1011 Ohm-cm.

    摘要翻译： 公开了一种库仑静电卡盘，其包括基板，覆盖基板的导电层和覆盖导电层的消弧层。 静电卡盘还包括覆盖消弧层的高k电介质层，其中高k电介质层的介电常数不小于约10，电阻率不小于约1011欧姆 - 厘米。

    SEALED PLASMA COATINGS
    8.
    发明申请
    SEALED PLASMA COATINGS 审中-公开
    密封等离子体涂料

    公开(公告)号：US20100323124A1

    公开(公告)日：2010-12-23

    申请号：US12814107

    申请日：2010-06-11

    申请人： Ara Vartabedian ,  Marc Abouaf ,  Stephen W. Into ,  Matthew A. Simpson

    发明人： Ara Vartabedian ,  Marc Abouaf ,  Stephen W. Into ,  Matthew A. Simpson

    IPC分类号： C23C16/458 ,  H01L21/683 ,  C23C16/00

    CPC分类号： C23C4/18 ,  C23C28/042 ,  C23C28/321 ,  C23C28/322 ,  C23C28/345 ,  C23C28/3455 ,  H01J37/321 ,  H01J37/32495 ,  H01L21/6833

    摘要： A processing device includes a plurality of walls defining an interior space configured to be exposed to plasma and a surface coating on the interior surface of at least one of the plurality of walls. The surface coating includes pores forming interconnected porosity. The processing device further includes a sealant residing in at least a portion of the pores of the surface coating. In an embodiment, the sealant can be a thermally cured sealant having a cure temperature not greater than about 100° C. In another embodiment, the sealant can be an epoxy sealant having a viscosity of not greater than 500 cP in liquid precursor form. In yet another embodiment, the sealant can be a low shrinkage sealant characterized by a solidification shrinkage of not greater than 8%.

    摘要翻译： 处理装置包括限定被配置为暴露于等离子体的内部空间的多个壁和多个壁中的至少一个的内表面上的表面涂层。 表面涂层包括形成互连孔隙的孔。 处理装置还包括位于表面涂层的孔的至少一部分中的密封剂。 在一个实施方案中，密封剂可以是固化温度不大于约100℃的热固化密封剂。在另一个实施方案中，密封剂可以是液体前体形式的粘度不大于500cP的环氧密封剂。 在另一个实施方案中，密封剂可以是低收缩密封剂，其特征在于凝固收缩率不大于8％。

    ELECTROSTATIC CHUCK AND METHOD OF FORMING
    9.
    发明申请
    ELECTROSTATIC CHUCK AND METHOD OF FORMING 审中-公开
    静电切割和成型方法

    公开(公告)号：US20080151466A1

    公开(公告)日：2008-06-26

    申请号：US11960340

    申请日：2007-12-19

    申请人： Matthew A. Simpson

    发明人： Matthew A. Simpson

    IPC分类号： H01L21/683 ,  H01R43/00

    CPC分类号： H01L21/6833 ,  H01L21/68 ,  Y10T29/49117

    摘要： An electrostatic chuck is disclosed which includes a substrate, a patterned conductive layer overlying the substrate, such that the patterned conductive layer is defining electrode pathways separated by gaps. The electrostatic chuck also includes a resistive layer overlying the patterned conductive layer and a low-k dielectric layer overlying the substrate and disposed in the gaps between the electrode pathways. The low-k dielectric layer includes a material having a different phase than the material of the substrate.

    摘要翻译： 公开了一种静电卡盘，其包括衬底，覆盖衬底的图案化导电层，使得图案化导电层限定由间隙分开的电极路径。 静电卡盘还包括覆盖图案化导电层的电阻层和覆盖衬底并设置在电极通路之间的间隙中的低k电介质层。 低k电介质层包括具有与衬底材料不同的相位的材料。