公开(公告)号：US20240332285A1

公开(公告)日：2024-10-03

申请号：US18129702

申请日：2023-03-31

Applicant: Intel Corporation

Inventor： Sukru Yemenicioglu ,  Abhishek Anil Sharma ,  Sudipto Naskar ,  Kalyan C. Kolluru ,  Chu-Hsin Liang ,  Bashir Uddin Mahmud ,  Van Le

IPC: H01L27/02 ,  H01L21/84 ,  H01L29/66 ,  H01L29/786 ,  H01L29/872 ,  H02H9/04

CPC classification number: H01L27/0266 ,  H01L21/84 ,  H01L27/0255 ,  H01L27/0296 ,  H01L29/6603 ,  H01L29/66143 ,  H01L29/66212 ,  H01L29/66522 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78696 ,  H01L29/872 ,  H02H9/046

Abstract: An integrated circuit device comprising a resistor formed on a non-crystalline substrate, the resistor comprising a gate electrode; a gate dielectric in contact with the gate electrode; a source electrode and a drain electrode; and a thin film transistor TFT channel material coupled between the source electrode and the drain electrode.

公开(公告)号：US20240088132A1

公开(公告)日：2024-03-14

申请号：US17943819

申请日：2022-09-13

Applicant: Intel Corporation

Inventor： Nicholas A. Thomson ,  Kalyan C. Kolluru ,  Ayan Kar ,  Chu-Hsin Liang ,  Benjamin Orr ,  Biswajeet Guha ,  Brian Greene ,  Chung-Hsun Lin ,  Sabih U. Omar ,  Sameer Jayanta Joglekar

IPC: H01L27/02 ,  H01L29/06 ,  H01L29/861

CPC classification number: H01L27/0255 ,  H01L29/0673 ,  H01L29/8611

Abstract: An integrated circuit structure includes a sub-fin having (i) a first portion including a p-type dopant and (ii) a second portion including an n-type dopant. A first body of semiconductor material is above the first portion of the sub-fin, and a second body of semiconductor material is above the second portion of the sub-fin. In an example, the first portion of the sub-fin and the second portion of the sub-fin are in contact with each other, to form a PN junction of a diode. For example, the first portion of the sub-fin is part of an anode of the diode, and wherein the second portion of the sub-fin is part of a cathode of the diode.