Micro pick and bond assembly
    1.
    发明授权

    公开(公告)号:US10242892B2

    公开(公告)日:2019-03-26

    申请号:US15512342

    申请日:2014-10-17

    Abstract: Micro pick-and-bond heads, assembly methods, and device assemblies. In, embodiments, micro pick-and-bond heads transfer micro device elements, such as (micro) LEDs, en masse from a source substrate to a target substrate, such as a LED display substrate. Anchor and release structures on the source substrate enable device elements to be separated from a source substrate, while pressure sensitive adhesive (PSA) enables device elements to be temporarily affixed to pedestals of a micro pick-and-bond head. Once the device elements are permanently affixed to a target substrate, the PSA interface may be defeated through peeling and/or thermal decomposition of an interface layer.

    Micro pick and bond assembly
    2.
    发明授权

    公开(公告)号:US10204808B2

    公开(公告)日:2019-02-12

    申请号:US15512342

    申请日:2014-10-17

    Abstract: Micro pick-and-bond heads, assembly methods, and device assemblies. In, embodiments, micro pick-and-bond heads transfer micro device elements, such as (micro) LEDs, en masse from a source substrate to a target substrate, such as a LED display substrate. Anchor and release structures on the source substrate enable device elements to be separated from a source substrate, while pressure sensitive adhesive (PSA) enables device elements to be temporarily affixed to pedestals of a micro pick-and-bond head. Once the device elements are permanently affixed to a target substrate, the PSA interface may be defeated through peeling and/or thermal decomposition of an interface layer.

    METAL-INSULATOR-METAL CAPACITOR FORMATION TECHNIQUES
    3.
    发明申请
    METAL-INSULATOR-METAL CAPACITOR FORMATION TECHNIQUES 审中-公开
    金属绝缘体 - 金属电容器形成技术

    公开(公告)号:US20150155349A1

    公开(公告)日:2015-06-04

    申请号:US14622157

    申请日:2015-02-13

    CPC classification number: H01L28/60 H01L21/0337 H01L27/224 H01L28/82

    Abstract: Techniques and structure are disclosed for providing a MIM capacitor having a generally corrugated profile. The corrugated topography is provisioned using sacrificial, self-organizing materials that effectively create a pattern in response to treatment (heat or other suitable stimulus), which is transferred to a dielectric material in which the MIM capacitor is formed. The self-organizing material may be, for example, a layer of directed self-assembly material that segregates into two alternating phases in response to heat or other stimulus, wherein one of the phases then can be selectively etched with respect to the other phase to provide the desired pattern. In another example case, the self-organizing material is a layer of material that coalesces into isolated islands when heated. As will be appreciated in light of this disclosure, the disclosed techniques can be used, for example, to increase capacitance per unit area, which can be scaled by etching deeper capacitor trenches/holes.

    Abstract translation: 公开了用于提供具有大体波形轮廓的MIM电容器的技术和结构。 使用牺牲性自组织材料提供波纹形状,其有效地产生响应于被形成MIM电容器的介电材料的处理(热或其它合适的刺激)的图案。 自组织材料可以是例如响应于热或其它刺激而分离成两个交替相的定向自组装材料层,其中相中的一个相可以相对于另一相被选择性地蚀刻到 提供所需的图案。 在另一个例子中,自组织材料是在加热时聚结成孤岛的材料层。 根据本公开将会理解,所公开的技术可以用于例如增加每单位面积的电容,其可以通过蚀刻更深的电容器沟槽/孔来缩放。

    MICRO PICK AND BOND ASSEMBLY
    5.
    发明申请

    公开(公告)号:US20190148188A1

    公开(公告)日:2019-05-16

    申请号:US16224550

    申请日:2018-12-18

    Abstract: Micro pick-and-bond heads, assembly methods, and device assemblies. In, embodiments, micro pick-and-bond heads transfer micro device elements, such as (micro) LEDs, en masse from a source substrate to a target substrate, such as a LED display substrate. Anchor and release structures on the source substrate enable device elements to be separated from a source substrate, while pressure sensitive adhesive (PSA) enables device elements to be temporarily affixed to pedestals of a micro pick-and bond head. Once the device elements are permanently affixed to a target substrate, the PSA interface may be defeated through peeling and/or thermal decomposition of an interface layer.

    Metal-insulator-metal capacitor formation techniques

    公开(公告)号:US09443922B2

    公开(公告)日:2016-09-13

    申请号:US14622157

    申请日:2015-02-13

    CPC classification number: H01L28/60 H01L21/0337 H01L27/224 H01L28/82

    Abstract: Techniques and structure are disclosed for providing a MIM capacitor having a generally corrugated profile. The corrugated topography is provisioned using sacrificial, self-organizing materials that effectively create a pattern in response to treatment (heat or other suitable stimulus), which is transferred to a dielectric material in which the MIM capacitor is formed. The self-organizing material may be, for example, a layer of directed self-assembly material that segregates into two alternating phases in response to heat or other stimulus, wherein one of the phases then can be selectively etched with respect to the other phase to provide the desired pattern. In another example case, the self-organizing material is a layer of material that coalesces into isolated islands when heated. As will be appreciated in light of this disclosure, the disclosed techniques can be used, for example, to increase capacitance per unit area, which can be scaled by etching deeper capacitor trenches/holes.

    Transparent holographic display with dynamic image control
    7.
    发明授权
    Transparent holographic display with dynamic image control 有权
    具有动态图像控制的透明全息显示

    公开(公告)号:US09304491B2

    公开(公告)日:2016-04-05

    申请号:US13685401

    申请日:2012-11-26

    CPC classification number: G03H1/2294 G03H2001/2234 G03H2210/30

    Abstract: Generally, this disclosure provides systems and methods for generating three dimensional holographic images on a transparent display screen with dynamic image control. The system may include a transparent display screen that includes an array of pixels; a driver circuit configured to control each of the pixels in the array of pixels such that the transparent display screen displays an interference fringe pattern, the interference fringe pattern associated with a hologram; and a coherent light source configured to illuminate the transparent display screen with coherent light, wherein transformation of the coherent light by the interference fringe pattern generates a three dimensional holographic image.

    Abstract translation: 通常,本公开提供了用于在具有动态图像控制的透明显示屏上产生三维全息图像的系统和方法。 该系统可以包括包括像素阵列的透明显示屏幕; 驱动器电路,被配置为控制像素阵列中的每个像素,使得透明显示屏幕显示干涉条纹图案,与全息图相关联的干涉条纹图案; 以及被配置为用相干光照亮透明显示屏的相干光源,其中通过干涉条纹图案的相干光的变换产生三维全息图像。

    Metal-insulator-metal capacitor formation techniques
    8.
    发明授权
    Metal-insulator-metal capacitor formation techniques 有权
    金属 - 绝缘体 - 金属电容器形成技术

    公开(公告)号:US08993404B2

    公开(公告)日:2015-03-31

    申请号:US13748277

    申请日:2013-01-23

    CPC classification number: H01L28/60 H01L21/0337 H01L27/224 H01L28/82

    Abstract: Techniques and structure are disclosed for providing a MIM capacitor having a generally corrugated profile. The corrugated topography is provisioned using sacrificial, self-organizing materials that effectively create a pattern in response to treatment (heat or other suitable stimulus), which is transferred to a dielectric material in which the MIM capacitor is formed. The self-organizing material may be, for example, a layer of directed self-assembly material that segregates into two alternating phases in response to heat or other stimulus, wherein one of the phases then can be selectively etched with respect to the other phase to provide the desired pattern. In another example case, the self-organizing material is a layer of material that coalesces into isolated islands when heated. As will be appreciated in light of this disclosure, the disclosed techniques can be used, for example, to increase capacitance per unit area, which can be scaled by etching deeper capacitor trenches/holes.

    Abstract translation: 公开了用于提供具有大体波形轮廓的MIM电容器的技术和结构。 使用牺牲性自组织材料提供波纹形状,其有效地产生响应于被形成MIM电容器的介电材料的处理(热或其它合适的刺激)的图案。 自组织材料可以是例如响应于热或其它刺激而分离成两个交替相的定向自组装材料层,其中相中的一个相可以相对于另一相被选择性地蚀刻到 提供所需的图案。 在另一个例子中,自组织材料是在加热时聚结成孤岛的材料层。 根据本公开将会理解,所公开的技术可以用于例如增加每单位面积的电容,其可以通过蚀刻更深的电容器沟槽/孔来缩放。

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