公开(公告)号：US20240222482A1

公开(公告)日：2024-07-04

申请号：US18091192

申请日：2022-12-29

Applicant: Intel Corporation

Inventor： Kevin P. O'Brien ,  Rachel Steinhardt ,  Chelsey Dorow ,  Carl H. Naylor ,  Kirby Maxey ,  Sudarat Lee ,  Ashish Verma Penumatcha ,  Uygar Avci ,  Scott Clendenning ,  Tristan Tronic ,  Mahmut Sami Kavrik ,  Ande Kitamura

IPC: H01L29/76 ,  H01L21/02 ,  H01L29/06 ,  H01L29/24 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

CPC classification number: H01L29/7606 ,  H01L21/02568 ,  H01L21/02603 ,  H01L29/0673 ,  H01L29/24 ,  H01L29/42392 ,  H01L29/66969 ,  H01L29/775

Abstract: Devices, transistor structures, systems, and techniques are described herein related to field effect transistors having a doping layer on metal chalcogenide nanoribbons outside of the channel region. The doping layer is a metal oxide that shifts the electrical characteristics of the nanoribbons and is formed by depositing a metal and oxidizing the metal by exposure to ozone and ultraviolet light.

公开(公告)号：US20250113540A1

公开(公告)日：2025-04-03

申请号：US18375055

申请日：2023-09-29

Applicant: Intel Corporation

Inventor： Carl H. Naylor ,  Rachel Steinhardt ,  Mahmut Sami Kavrik ,  Chia-Ching Lin ,  Andrey Vyatskikh ,  Kevin O’Brien ,  Kirby Maxey ,  Ashish Verma Penumatcha ,  Uygar Avci ,  Matthew Metz ,  Chelsey Dorow

IPC: H01L29/49 ,  H01L21/02 ,  H01L29/06 ,  H01L29/24 ,  H01L29/423 ,  H01L29/66 ,  H01L29/76 ,  H01L29/775 ,  H01L29/786

Abstract: Techniques and mechanisms for providing gate dielectric structures of a transistor. In an embodiment, the transistor comprises a thin channel structure which comprises one or more layers of a transition metal dichalcogenide (TMD) material. The channel structure forms two surfaces on opposite respective sides thereof, wherein the surfaces extend to each of two opposing edges of the channel structure. A composite gate dielectric structure comprises first bodies of a first dielectric material, wherein the first bodies each adjoin a different respective one of the two opposing edges, and variously extend to each of the surfaces two surfaces. The composite gate dielectric structure further comprises another body of a second dielectric material other than the first dielectric material. In another embodiment, the other body adjoins one or both of the two surfaces, and extends along one or both of the two surfaces to each of the first bodies.