-
公开(公告)号:US20240222483A1
公开(公告)日:2024-07-04
申请号:US18091211
申请日:2022-12-29
Applicant: Intel Corporation
Inventor: Carl H. Naylor , Kirby Maxey , Kevin O’Brien , Chelsey Dorow , Sudarat Lee , Ashish Verma Penumatcha , Uygar Avci , Matthew Metz , Scott B. Clendenning , Chia-Ching Lin , Ande Kitamura , Mahmut Sami Kavrik
IPC: H01L29/76 , H01L21/02 , H01L29/06 , H01L29/24 , H01L29/423 , H01L29/66 , H01L29/775
CPC classification number: H01L29/7606 , H01L21/02568 , H01L21/0257 , H01L21/02603 , H01L21/0262 , H01L21/02645 , H01L29/0673 , H01L29/24 , H01L29/42392 , H01L29/66969 , H01L29/775
Abstract: A transistor structure includes a stack of nanoribbons spanning between terminals of the transistor. Ends of the nanoribbons include silicon, and channel regions between the ends include a transition metal and a chalcogen. A gate structure over the channel regions includes an insulator between the channel regions and a gate electrode material. Contact regions may be formed by modifying portions of the channel regions by adding a dopant to, or altering the crystal structure of, the channel regions. The transistor structure may be in an integrated circuit device.
-
公开(公告)号:US20250113540A1
公开(公告)日:2025-04-03
申请号:US18375055
申请日:2023-09-29
Applicant: Intel Corporation
Inventor: Carl H. Naylor , Rachel Steinhardt , Mahmut Sami Kavrik , Chia-Ching Lin , Andrey Vyatskikh , Kevin O’Brien , Kirby Maxey , Ashish Verma Penumatcha , Uygar Avci , Matthew Metz , Chelsey Dorow
IPC: H01L29/49 , H01L21/02 , H01L29/06 , H01L29/24 , H01L29/423 , H01L29/66 , H01L29/76 , H01L29/775 , H01L29/786
Abstract: Techniques and mechanisms for providing gate dielectric structures of a transistor. In an embodiment, the transistor comprises a thin channel structure which comprises one or more layers of a transition metal dichalcogenide (TMD) material. The channel structure forms two surfaces on opposite respective sides thereof, wherein the surfaces extend to each of two opposing edges of the channel structure. A composite gate dielectric structure comprises first bodies of a first dielectric material, wherein the first bodies each adjoin a different respective one of the two opposing edges, and variously extend to each of the surfaces two surfaces. The composite gate dielectric structure further comprises another body of a second dielectric material other than the first dielectric material. In another embodiment, the other body adjoins one or both of the two surfaces, and extends along one or both of the two surfaces to each of the first bodies.
-