公开(公告)号：US20150179918A1

公开(公告)日：2015-06-25

申请号：US14138672

申请日：2013-12-23

Applicant: Intermolecular Inc.

Inventor： Frank Greer ,  Andy Steinbach

IPC: H01L39/24

CPC classification number: H01L39/2493

Abstract: In a “window-junction” formation process for Josephson junction fabrication, a spacer dielectric is formed over the first superconducting electrode layer, then an opening (the “window” is formed to expose the part of the electrode layer to be used for the junction. In an atomic layer deposition (ALD) chamber (or multi-chamber sealed system) equipped with direct or remote plasma capability, the exposed part of the electrode is sputter-etched with Ar, H2, or a combination to remove native oxides, etch residues, and other contaminants. Optionally, an O2 or O3 pre-clean may precede the sputter etch. When the electrode is clean, the tunnel barrier layer is deposited by ALD in-situ without further oxidant exposure.

Abstract translation: 在用于约瑟夫逊结制造的“窗口”形成工艺中，在第一超导电极层上形成间隔电介质，然后形成开口（“窗口”形成以露出用于结的电极层的部分 在具有直接或远程等离子体能力的原子层沉积（ALD）腔室（或多室密封系统）中，用Ar，H2或组合对暴露的电极部分进行溅射蚀刻，以去除天然氧化物，蚀刻 残留物和其他污染物，任选地，可以在溅射蚀刻之前进行O 2或O 3预清洁。当电极清洁时，隧道势垒层由原位沉积而不进一步氧化剂暴露。

公开(公告)号：US20150179436A1

公开(公告)日：2015-06-25

申请号：US14139222

申请日：2013-12-23

Applicant: Intermolecular Inc.

Inventor： Frank Greer ,  Andy Steinbach ,  Wenxian Zhu

IPC: H01L21/02

CPC classification number: H01L27/18 ,  H01L39/2493

Abstract: Defects in hydrogenated amorphous silicon are reduced by low-energy ion treatments and optional annealing. The treatments leave strongly-bonded hydrogen and other passivants in place, but increase the mobility of loosely-bonded and interstitially trapped hydrogen that would otherwise form unwanted two-level systems (TLS). The mobilized hydrogen atoms may be attracted to unused passivation sites or recombined into H2 gas and diffuse out of the deposited layer. The treatments also increase the density of the material. The optional anneal may partially crystallize the layer, further densify the layer, or both. The reduced number of defects and the increased crystallinity reduce the loss tangent of amorphous silicon dielectrics for superconducting microwave devices.

公开(公告)号：US09425376B2

公开(公告)日：2016-08-23

申请号：US14138672

申请日：2013-12-23

Applicant: Intermolecular Inc.

Inventor： Frank Greer ,  Andy Steinbach

IPC: H01L39/24

CPC classification number: H01L39/2493

Abstract: In a “window-junction” formation process for Josephson junction fabrication, a spacer dielectric is formed over the first superconducting electrode layer, then an opening (the “window” is formed to expose the part of the electrode layer to be used for the junction. In an atomic layer deposition (ALD) chamber (or multi-chamber sealed system) equipped with direct or remote plasma capability, the exposed part of the electrode is sputter-etched with Ar, H2, or a combination to remove native oxides, etch residues, and other contaminants. Optionally, an O2 or O3 pre-clean may precede the sputter etch. When the electrode is clean, the tunnel barrier layer is deposited by ALD in-situ without further oxidant exposure.

公开(公告)号：US09281463B2

公开(公告)日：2016-03-08

申请号：US14138656

申请日：2013-12-23

Applicant: Intermolecular Inc.

Inventor： Frank Greer ,  Andy Steinbach

IPC: H01L39/24

CPC classification number: H01L39/2493

Abstract: Metal oxide tunnel barrier layers for superconducting tunnel junctions are formed by atomic layer deposition. Both precursors include a metal (which may be the same metal or may be different). The first precursor is a metal alkoxide with oxygen bonded to the metal, and the second precursor is an oxygen-free metal precursor with an alkyl-reactive ligand such as a halogen or methyl group. The alkyl-reactive ligand reacts with the alkyl group of the alkoxide, forming a detached by-product and leaving a metal oxide monolayer. The temperature is selected to promote the reaction without causing the metal alkoxide to self-decompose. The oxygen in the alkoxide precursor is bonded to a metal before entering the chamber and remains bonded throughout the reaction that forms the monolayer. Therefore, the oxygen used in this process has no opportunity to oxidize the underlying superconducting electrode.

公开(公告)号：US09224783B2

公开(公告)日：2015-12-29

申请号：US14139222

申请日：2013-12-23

Applicant: Intermolecular Inc.

Inventor： Frank Greer ,  Andy Steinbach ,  Wenxian Zhu

IPC: H01L21/31 ,  H01L21/469 ,  H01L27/18 ,  H01L39/24

CPC classification number: H01L27/18 ,  H01L39/2493

Abstract: Defects in hydrogenated amorphous silicon are reduced by low-energy ion treatments and optional annealing. The treatments leave strongly-bonded hydrogen and other passivants in place, but increase the mobility of loosely-bonded and interstitially trapped hydrogen that would otherwise form unwanted two-level systems (TLS). The mobilized hydrogen atoms may be attracted to unused passivation sites or recombined into H2 gas and diffuse out of the deposited layer. The treatments also increase the density of the material. The optional anneal may partially crystallize the layer, further densify the layer, or both. The reduced number of defects and the increased crystallinity reduce the loss tangent of amorphous silicon dielectrics for superconducting microwave devices.

Abstract translation: 通过低能离子处理和任选的退火，氢化非晶硅中的缺陷被减少。 这些处理方法使氢键和其他钝化剂存在一定的位置，但会增加松散键合和间隙捕获的氢气的流动性，否则其将形成不需要的两级系统（TLS）。 活化的氢原子可以被吸引到未使用的钝化位点或重新组合成H 2气体并扩散出沉积层。 治疗也增加了材料的密度。 可选择的退火可以部分地使层结晶，进一步使该层致密，或者两者都致密。 减少的缺陷数量和增加的结晶度降低了用于超导微波器件的非晶硅电介质的损耗角正切。

公开(公告)号：US20150179917A1

公开(公告)日：2015-06-25

申请号：US14138656

申请日：2013-12-23

Applicant: Intermolecular Inc.

Inventor： Frank Greer ,  Andy Steinbach

IPC: H01L39/24

CPC classification number: H01L39/2493

Abstract: Metal oxide tunnel barrier layers for superconducting tunnel junctions are formed by atomic layer deposition. Both precursors include a metal (which may be the same metal or may be different). The first precursor is a metal alkoxide with oxygen bonded to the metal, and the second precursor is an oxygen-free metal precursor with an alkyl-reactive ligand such as a halogen or methyl group. The alkyl-reactive ligand reacts with the alkyl group of the alkoxide, forming a detached by-product and leaving a metal oxide monolayer. The temperature is selected to promote the reaction without causing the metal alkoxide to self-decompose. The oxygen in the alkoxide precursor is bonded to a metal before entering the chamber and remains bonded throughout the reaction that forms the monolayer. Therefore, the oxygen used in this process has no opportunity to oxidize the underlying superconducting electrode.

Abstract translation: 用于超导隧道结的金属氧化物隧道势垒层通过原子层沉积形成。 两种前体包括金属（其可以是相同的金属或可以是不同的）。 第一种前体是具有与金属键合的金属醇盐，第二种前体是具有烷基反应性配体如卤素或甲基的无氧金属前体。 烷基反应性配体与醇盐的烷基反应，形成分离的副产物并留下金属氧化物单层。 选择温度以促进反应而不导致金属醇盐自分解。 在进入室之前，醇盐前体中的氧被结合到金属上，并且在形成单层的整个反应中保持结合。 因此，该方法中使用的氧气没有氧化下面的超导电极的机会。

公开(公告)号：US20150179914A1

公开(公告)日：2015-06-25

申请号：US14138692

申请日：2013-12-23

Applicant: Intermolecular Inc.

Inventor： Frank Greer ,  Andy Steinbach ,  Wenxian Zhu

IPC: H01L39/24 ,  H01L39/02

CPC classification number: H01L23/53285 ,  H01L21/02123 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02356 ,  H01L21/3105 ,  H01L21/76807 ,  H01L21/76828 ,  H01L21/76891 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A interconnect structure for superconducting devices uses a material with a high melting point for the superconductive wiring; examples include refractory metals such as niobium. Because the wiring is tolerant of high temperatures, the interlayer dielectric (e.g., amorphous silicon with or without small amounts of passivants such as hydrogen or fluorine) may be subjected to rapid thermal annealing to reduce defects by driving off excess hydrogen, and optionally partially crystallizing the material.

Abstract translation: 用于超导装置的互连结构使用具有高熔点的材料用于超导布线; 实例包括难熔金属如铌。 由于布线耐高温，所以层间电介质（例如，具有或不含少量钝化剂如氢或氟的非晶硅）可以进行快速热退火，以通过排除多余的氢来降低缺陷，并且可选地部分结晶 材料。