公开(公告)号：US08859431B2

公开(公告)日：2014-10-14

申请号：US13911200

申请日：2013-06-06

Applicant: Intermolecular Inc.

Inventor： Anh Duong ,  John Foster ,  Olov Karlsson ,  James Mavrinac ,  Usha Raghuram

IPC: H01L21/44 ,  H01L21/28 ,  H01L21/324 ,  H01L21/285 ,  H01L21/67 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L21/324 ,  H01L21/02068 ,  H01L21/28 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/67028 ,  H01L21/67057 ,  H01L29/665

Abstract: The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process. Post silicidation residues of nickel and platinum may not be removed adequately just by an aqua regia solution (comprising a mixture of nitric acid and hydrochloric acid). Therefore, embodiments of the invention provide a multi-step residue cleaning, comprising exposing the substrate to an aqua regia solution, followed by an exposure to a chlorine gas or a solution comprising dissolved chlorine gas, which may further react with remaining platinum residues, rendering it more soluble in aqueous solution and thereby dissolving it from the surface of the substrate.

Abstract translation: 本发明公开了一种在镍铂硅化过程中清除半导体衬底的残留物的方法。 镍和铂的后硅化残留物只能通过王水溶液（包括硝酸和盐酸的混合物）而被充分除去。 因此，本发明的实施方案提供多步残留物清洗，包括将底物暴露于王水溶液，随后暴露于氯气或包含溶解的氯气的溶液中，其可进一步与剩余的铂残基反应，使得 它更可溶于水溶液，从而从基底表面溶解。

公开(公告)号：US20130267091A1

公开(公告)日：2013-10-10

申请号：US13911200

申请日：2013-06-06

Applicant: Intermolecular Inc.

Inventor： Anh Duong ,  John Foster ,  Olov Karlsson ,  James Mavrinac ,  Usha Raghuram

IPC: H01L21/324 ,  H01L21/28

CPC classification number: H01L21/324 ,  H01L21/02068 ,  H01L21/28 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/67028 ,  H01L21/67057 ,  H01L29/665

Abstract: The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process. Post silicidation residues of nickel and platinum may not be removed adequately just by an aqua regia solution (comprising a mixture of nitric acid and hydrochloric acid). Therefore, embodiments of the invention provide a multi-step residue cleaning, comprising exposing the substrate to an aqua regia solution, followed by an exposure to a chlorine gas or a solution comprising dissolved chlorine gas, which may further react with remaining platinum residues, rendering it more soluble in aqueous solution and thereby dissolving it from the surface of the substrate.

Abstract translation: 本发明公开了一种在镍铂硅化过程中清除半导体衬底的残留物的方法。 镍和铂的后硅化残留物只能通过王水溶液（包括硝酸和盐酸的混合物）而被充分除去。 因此，本发明的实施方案提供多步残留物清洗，包括将底物暴露于王水溶液，随后暴露于氯气或包含溶解的氯气的溶液中，其可进一步与剩余的铂残基反应，使得 它更可溶于水溶液，从而从基底表面溶解。

公开(公告)号：US09297775B2

公开(公告)日：2016-03-29

申请号：US14285921

申请日：2014-05-23

Applicant: Intermolecular Inc.

Inventor： Edwin Adhiprakasha ,  Sean Barstow ,  Ashish Bodke ,  Zhendong Hong ,  Usha Raghuram ,  Karthik Ramani ,  Vivian Ryan ,  Jingang Su ,  Xunyuan Zhang

IPC: H01L27/20 ,  G01N27/20 ,  C23C14/34 ,  C23C14/54 ,  C23C14/06 ,  G01N27/04

CPC classification number: G01N27/20 ,  C23C14/06 ,  C23C14/14 ,  C23C14/3464 ,  C23C14/54 ,  C23C14/548 ,  G01N27/041

Abstract: Barrier layers, barrier stacks, and seed layers for small-scale interconnects (e.g., copper) are combinatorially screened using test structures sputtered or co-sputtered through apertures of varying size. Various characteristics (e.g., resistivity, crystalline morphology, surface roughness) related to conductivity, diffusion blocking, and adhesion are measured before and/or after annealing and compared to arrive at materials and process parameters for low diffusion with high conductivity through the interconnect. Example results show that some formulations of tantalum-titanium barriers may replace thicker tantalum/tantalum-nitride stacks, in some cases with a Cu—Mn seed layer between the Ta—Ti and copper.

公开(公告)号：US20150338362A1

公开(公告)日：2015-11-26

申请号：US14285921

申请日：2014-05-23

Applicant: Intermolecular Inc.

Inventor： Edwin Adhiprakasha ,  Sean Barstow ,  Ashish Bodke ,  Zhendong Hong ,  Usha Raghuram ,  Karthik Ramani ,  Vivian Ryan ,  Jingang Su ,  Xunyuan Zhang

IPC: G01N27/20 ,  G01N27/04 ,  C23C14/06 ,  C23C14/34 ,  C23C14/54

CPC classification number: G01N27/20 ,  C23C14/06 ,  C23C14/14 ,  C23C14/3464 ,  C23C14/54 ,  C23C14/548 ,  G01N27/041

Abstract: Barrier layers, barrier stacks, and seed layers for small-scale interconnects (e.g., copper) are combinatorially screened using test structures sputtered or co-sputtered through apertures of varying size. Various characteristics (e.g., resistivity, crystalline morphology, surface roughness) related to conductivity, diffusion blocking, and adhesion are measured before and/or after annealing and compared to arrive at materials and process parameters for low diffusion with high conductivity through the interconnect. Example results show that some formulations of tantalum-titanium barriers may replace thicker tantalum/tantalum-nitride stacks, in some cases with a Cu—Mn seed layer between the Ta—Ti and copper.

Abstract translation: 使用通过不同大小的孔溅射或共溅射的测试结构组合地筛选用于小规模互连（例如铜）的阻挡层，阻挡层和种子层。 在退火之前和/或之后测量与导电性，扩散阻挡和粘附有关的各种特性（例如，电阻率，结晶形态，表面粗糙度）并进行比较以获得材料和工艺参数，以通过互连实现高导电性的低扩散。 示例结果表明，一些钽 - 钛屏障的配方可以替代较厚的钽/氮化钽叠层，在某些情况下可以在Ta-Ti和铜之间具有Cu-Mn种子层。