利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

40 条记录 (耗时 0.027 秒)

    Transferred thin film transistor and method for manufacturing the same
    1.
    发明授权
    Transferred thin film transistor and method for manufacturing the same 有权
    转移薄膜晶体管及其制造方法

    公开(公告)号：US08404532B2

    公开(公告)日：2013-03-26

    申请号：US12782303

    申请日：2010-05-18

    申请人： Jae Bon Koo ,  Jong-Hyun Ahn ,  Seung Youl Kang ,  Hasan Musarrat ,  In-Kyu You ,  Kyoung Ik Cho

    发明人： Jae Bon Koo ,  Jong-Hyun Ahn ,  Seung Youl Kang ,  Hasan Musarrat ,  In-Kyu You ,  Kyoung Ik Cho

    IPC分类号： H01L21/336

    CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/78603

    摘要： Provided are a transferred thin film transistor and a method of manufacturing the same. The method includes: forming a source region and a drain region that extend in a first direction in a first substrate and a channel region between the source region and the drain region; forming trenches that extend in a second direction in the first substrate to define an active layer between the trenches, the second direction intersecting the first direction; separating the active layer between the trenches from the first substrate by performing an anisotropic etching process on the first substrate inside the trenches; attaching the active layer on a second substrate; and forming a gate electrode in the first direction on the channel region of the active layer.

    摘要翻译： 提供了一种转移的薄膜晶体管及其制造方法。 该方法包括：形成在第一衬底中沿第一方向延伸的源极区域和漏极区域以及源极区域和漏极区域之间的沟道区域; 形成在所述第一衬底中沿第二方向延伸的沟槽，以在所述沟槽之间限定有源层，所述第二方向与所述第一方向相交; 通过在所述沟槽内的所述第一衬底上进行各向异性蚀刻工艺，从所述第一衬底分离所述沟槽之间的有源层; 将活性层附着在第二基底上; 以及在有源层的沟道区上沿第一方向形成栅电极。

    Method of manufacturing thin film transistor and thin film transistor substrate
    3.
    发明授权
    Method of manufacturing thin film transistor and thin film transistor substrate 有权
    制造薄膜晶体管和薄膜晶体管基板的方法

    公开(公告)号：US08378421B2

    公开(公告)日：2013-02-19

    申请号：US13350037

    申请日：2012-01-13

    申请人： Jae Bon Koo ,  In-Kyu You ,  Seongdeok Ahn ,  Kyoung Ik Cho

    发明人： Jae Bon Koo ,  In-Kyu You ,  Seongdeok Ahn ,  Kyoung Ik Cho

    IPC分类号： H01L27/12

    CPC分类号： H01L29/78603 ,  H01L27/1266 ,  H01L29/66757 ,  H01L29/78618

    摘要： A thin film transistor substrate. The thin film transistor substrate includes a substrate, an adhesive layer on the substrate, and a semiconductor layer having a first doped region, a second doped region and a channel region on the adhesive layer. The thin film transistor substrate further includes a first dielectric layer on the semiconductor layer, a gate electrode overlapping the channel region, a second dielectric layer on the first dielectric layer and the gate electrode, a source electrode disposed on the second insulating layer, and a drain electrode spaced apart from the source electrode on the source electrode. The channel region is disposed between the first doped region and the second doped region, and has a transmittance higher than those of the first doped region and the second doped region.

    摘要翻译： 薄膜晶体管基板。 薄膜晶体管衬底包括衬底，衬底上的粘合剂层，以及在粘合剂层上具有第一掺杂区域，第二掺杂区域和沟道区域的半导体层。 薄膜晶体管基板还包括半导体层上的第一介电层，与沟道区重叠的栅极电极，第一介电层上的第二电介质层和栅极电极，设置在第二绝缘层上的源电极和 漏电极与源电极上的源电极间隔开。 沟道区域设置在第一掺杂区域和第二掺杂区域之间，并且具有高于第一掺杂区域和第二掺杂区域的透射率的透射率。

    Method of manufacturing thin film transistor and thin film transistor substrate
    5.
    发明授权
    Method of manufacturing thin film transistor and thin film transistor substrate 有权
    制造薄膜晶体管和薄膜晶体管基板的方法

    公开(公告)号：US08119463B2

    公开(公告)日：2012-02-21

    申请号：US12507725

    申请日：2009-07-22

    申请人： Jae Bon Koo ,  In-Kyu You ,  Seongdeok Ahn ,  Kyoung Ik Cho

    发明人： Jae Bon Koo ,  In-Kyu You ,  Seongdeok Ahn ,  Kyoung Ik Cho

    IPC分类号： H01L21/00 ,  H01L21/84

    CPC分类号： H01L29/78603 ,  H01L27/1266 ,  H01L29/66757 ,  H01L29/78618

    摘要： Provided is a method of manufacturing a thin film transistor that can improve self-alignment. In this method, a semiconductor layer comprising a first doped region, a second doped region and a channel region is formed on a sacrificial layer on a first substrate. Next, the semiconductor layer is separated from the first substrate and is then coupled on a second substrate. Next, a dielectric layer is formed on the second substrate and the semiconductor layer, and a first photoresist layer is formed on the dielectric layer. Thereafter, the first photoresist layer is exposed to light from a rear surface of the second substrate by using the first doped region and the second doped region as a mask, to form a first mask pattern. Next, a gate electrode overlapping the channel region is formed on the dielectric layer by using the first mask pattern as a mask, and a source electrode and a drain electrode connected to the first doped region and the second doped region, respectively are formed to complete a thin film transistor.

    摘要翻译： 提供了一种可以改善自对准的薄膜晶体管的制造方法。 在该方法中，在第一衬底上的牺牲层上形成包括第一掺杂区域，第二掺杂区域和沟道区域的半导体层。 接下来，半导体层与第一衬底分离，然后耦合在第二衬底上。 接下来，在第二基板和半导体层上形成电介质层，在电介质层上形成第一光致抗蚀剂层。 此后，通过使用第一掺杂区域和第二掺杂区域作为掩模，将第一光致抗蚀剂层从第二基板的后表面曝光，以形成第一掩模图案。 接下来，通过使用第一掩模图案作为掩模在介电层上形成与沟道区重叠的栅电极，分别形成连接到第一掺杂区和第二掺杂区的源电极和漏极，以完成 薄膜晶体管。

    ORGANIC THIN FILM TRANSISTOR AND METHOD OF FORMING THE SAME
    6.
    发明申请
    ORGANIC THIN FILM TRANSISTOR AND METHOD OF FORMING THE SAME 有权
    有机薄膜晶体管及其形成方法

    公开(公告)号：US20110204334A1

    公开(公告)日：2011-08-25

    申请号：US12858868

    申请日：2010-08-18

    申请人： Kang Dae KIM ,  In-Kyu You ,  Jae Bon Koo ,  Yong Suk Yang ,  Seung Youl Kang

    发明人： Kang Dae KIM ,  In-Kyu You ,  Jae Bon Koo ,  Yong Suk Yang ,  Seung Youl Kang

    IPC分类号： H01L51/10 ,  H01L51/40

    CPC分类号： H01L51/0545 ,  H01L51/105

    摘要： Provided are an organic thin film transistor and a method of forming the same. The method comprises forming a gate electrode on a substrate, forming a gate dielectric, which covers the gate electrode and includes a recess region at an upper portion, on the substrate, forming a source electrode and a drain electrode in the recess region, and forming an organic semiconductor layer between the source electrode and the drain electrode in the recess region.

    摘要翻译： 提供一种有机薄膜晶体管及其形成方法。 该方法包括在衬底上形成栅电极，形成覆盖栅电极并在衬底上包括上部的凹陷区的栅极电介质，在凹陷区域中形成源电极和漏电极，并形成 在凹陷区域中的源电极和漏电极之间的有机半导体层。

    Organic thin film transistor and method of forming the same
    7.
    发明授权
    Organic thin film transistor and method of forming the same 有权
    有机薄膜晶体管及其形成方法

    公开(公告)号：US08344366B2

    公开(公告)日：2013-01-01

    申请号：US12858868

    申请日：2010-08-18

    申请人： Kang Dae Kim ,  In-Kyu You ,  Jae Bon Koo ,  Yong Suk Yang ,  Seung Youl Kang

    发明人： Kang Dae Kim ,  In-Kyu You ,  Jae Bon Koo ,  Yong Suk Yang ,  Seung Youl Kang

    IPC分类号： H01L51/10

    CPC分类号： H01L51/0545 ,  H01L51/105

    摘要： Provided are an organic thin film transistor and a method of forming the same. The method comprises forming a gate electrode on a substrate, forming a gate dielectric, which covers the gate electrode and includes a recess region at an upper portion, on the substrate, forming a source electrode and a drain electrode in the recess region, and forming an organic semiconductor layer between the source electrode and the drain electrode in the recess region.

    摘要翻译： 提供一种有机薄膜晶体管及其形成方法。 该方法包括在衬底上形成栅电极，形成覆盖栅电极并在衬底上包括上部的凹陷区的栅极电介质，在凹陷区域中形成源电极和漏电极，并形成 在凹陷区域中的源电极和漏电极之间的有机半导体层。

    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    9.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
    半导体器件的制造方法

    公开(公告)号：US20110092032A1

    公开(公告)日：2011-04-21

    申请号：US12766958

    申请日：2010-04-26

    申请人： Jae Bon Koo ,  Seung Youl Kang

    发明人： Jae Bon Koo ,  Seung Youl Kang

    IPC分类号： H01L21/336

    CPC分类号： H01L29/78603 ,  H01L21/84

    摘要： Provided is a manufacturing methods of a semiconductor device. The methods includes: forming an active layer on a first substrate; bonding a top surface of the active layer with a second substrate and separating the active layer from the first substrate; forming conductive impurity regions corresponding to source and drain regions of the active layer bonded on the second substrate; bonding a third substrate on a bottom surface of the active layer and removing the second substrate; and forming a gate electrode on a top between the conductive impurity regions of the active layer bonded on the third substrate and forming source and drain electrodes on the conductive impurity regions.

    摘要翻译： 提供半导体器件的制造方法。 所述方法包括：在第一基板上形成有源层; 将有源层的顶表面与第二衬底结合并将有源层与第一衬底分离; 形成对应于结合在所述第二基板上的所述有源层的源区和漏区的导电杂质区; 将第三衬底接合在有源层的底表面上并移除第二衬底; 以及在结合在第三基板上的有源层的导电杂质区之间的顶部上形成栅电极，并在导电杂质区上形成源电极和漏电极。