公开(公告)号：US07637422B2

公开(公告)日：2009-12-29

申请号：US11475138

申请日：2006-06-27

申请人： Jae Hoon Kwak ,  Woo Ho Lee ,  Hee Chang Lee ,  Jae Hun Yi ,  In Gyu Roh ,  Jong Seok Lee

发明人： Jae Hoon Kwak ,  Woo Ho Lee ,  Hee Chang Lee ,  Jae Hun Yi ,  In Gyu Roh ,  Jong Seok Lee

IPC分类号： G06F17/60

CPC分类号： G07F19/202 ,  G07F19/20

摘要： A automated teller machine (ATM) verifies the authenticity of the cheque based on image information acquired by a CIS unit and magnetic character information acquired by a MICR unit. The ATM further includes a plural cheque leaves determining unit for determining the presence of plural cheque leaves using the image information, the magnetic character information, and thickness information of the cheque.

摘要翻译： 自动取款机（ATM）基于由CIS单元获取的图像信息和由MICR单元获取的磁性字符信息来验证支票的真实性。 ATM还包括多个检查叶决定单元，用于使用图像信息，磁性字符信息和检查的厚度信息来确定多个检查叶的存在。

公开(公告)号：US20130126969A1

公开(公告)日：2013-05-23

申请号：US13406726

申请日：2012-02-28

申请人： Jong Seok Lee ,  Kyoung Kook Hong

发明人： Jong Seok Lee ,  Kyoung Kook Hong

IPC分类号： H01L29/78

CPC分类号： H01L29/0657 ,  H01L29/0634 ,  H01L29/1608 ,  H01L29/42368 ,  H01L29/66068 ,  H01L29/7825

摘要： Disclosed is an LDMOS device, which is configured to reduce an electric field concentrated to a gate oxide film and lower an ON-resistance produced when the device conducts a forward action, and a method for manufacturing the same. More specifically, when an n-drift region is formed on a P-type substrate, a p-body is formed on the n-drift region through an epitaxial process, and then the p-body region is partially etched to form a plurality of p-epitaxial layers, so that when the device executes an action for blocking a reverse voltage, depletion layers are formed between the junction surfaces of the p-epitaxial layers and the n-drift region including the junction surfaces between the n-drift region and the p-body.

摘要翻译： 公开了一种LDMOS器件，其被配置为减少集中到栅极氧化物膜的电场并降低当器件进行正向动作时产生的导通电阻及其制造方法。 更具体地，当在P型衬底上形成n漂移区时，通过外延工艺在n漂移区上形成p体，然后部分蚀刻p体区以形成多个 使得当器件执行用于阻止反向电压的动作时，在p-外延层的连接表面和n漂移区之间形成耗尽层，该n-漂移区域包括n-漂移区和 p体。

公开(公告)号：US20130112991A1

公开(公告)日：2013-05-09

申请号：US13371702

申请日：2012-02-13

申请人： Kyoung Kook Hong ,  Jong Seok Lee

发明人： Kyoung Kook Hong ,  Jong Seok Lee

IPC分类号： H01L29/872 ,  H01L21/329

CPC分类号： H01L29/872 ,  H01L21/02529 ,  H01L21/26506 ,  H01L29/1608 ,  H01L29/36 ,  H01L29/66143

摘要： The present invention provides a silicon carbide Schottky-barrier diode device and a method for manufacturing the same. The silicon carbide Schottky bather diode device includes a primary n− epitaxial layer, an n+ epitaxial region, and a Schottky metal layer. The primary n− epitaxial layer is deposited on an n+ substrate joined with an ohmic metal layer at an undersurface thereof. The n+ epitaxial region is formed by implanting n+ ions into a central region of the primary n− epitaxial layer. The Schottky metal layer is deposited on the n+ epitaxial layer.

摘要翻译： 本发明提供一种碳化硅肖特基势垒二极管器件及其制造方法。 碳化硅肖特基二极体装置包括初级n外延层，n +外延区和肖特基金属层。 主n外延层沉积在与欧姆金属层的下表面连接的n +衬底上。 通过将n +离子注入初级n外延层的中心区域来形成n +外延区域。 肖特基金属层沉积在n +外延层上。

公开(公告)号：US08674436B2

公开(公告)日：2014-03-18

申请号：US13406726

申请日：2012-02-28

申请人： Jong Seok Lee ,  Kyoung Kook Hong

发明人： Jong Seok Lee ,  Kyoung Kook Hong

IPC分类号： H01L29/78 ,  H01L29/06

CPC分类号： H01L29/0657 ,  H01L29/0634 ,  H01L29/1608 ,  H01L29/42368 ,  H01L29/66068 ,  H01L29/7825

摘要： Disclosed is an LDMOS device, which is configured to reduce an electric field concentrated to a gate oxide film and lower an ON-resistance produced when the device conducts a forward action, and a method for manufacturing the same. More specifically, when an n-drift region is formed on a P-type substrate, a p-body is formed on the n-drift region through an epitaxial process, and then the p-body region is partially etched to form a plurality of p-epitaxial layers, so that when the device executes an action for blocking a reverse voltage, depletion layers are formed between the junction surfaces of the p-epitaxial layers and the n-drift region including the junction surfaces between the n-drift region and the p-body.

摘要翻译： 公开了一种LDMOS器件，其被配置为减少集中到栅极氧化物膜的电场并降低当器件进行正向动作时产生的导通电阻及其制造方法。 更具体地，当在P型衬底上形成n漂移区时，通过外延工艺在n漂移区上形成p体，然后部分蚀刻p体区以形成多个 使得当器件执行用于阻止反向电压的动作时，在p-外延层的连接表面和n漂移区之间形成耗尽层，该n-漂移区域包括n-漂移区和 p体。

公开(公告)号：US08980732B2

公开(公告)日：2015-03-17

申请号：US13372931

申请日：2012-02-14

申请人： Kyoung Kook Hong ,  Jong Seok Lee

发明人： Kyoung Kook Hong ,  Jong Seok Lee

IPC分类号： H01L21/02 ,  H01L27/082 ,  H01L29/872 ,  H01L29/66 ,  H01L21/04 ,  H01L29/16

CPC分类号： H01L29/872 ,  H01L21/046 ,  H01L21/0495 ,  H01L29/1608 ,  H01L29/6606

摘要： The present invention provides a method for manufacturing a silicon carbide Schottky barrier diode. In the method, an n− epitaxial layer is deposited on an n+ substrate. A sacrificial oxide film is formed on the n− epitaxial layer by heat treatment, and then a portion where a composite oxide film is to be formed is exposed by etching. Nitrogen is implanted into the n− epitaxial layer and the sacrificial oxide film using nitrogen plasma. A silicon nitride is deposited on the n− epitaxial layer and the sacrificial oxide film. The silicon nitride is thermally oxidized to form a composite oxide film. An oxide film in a portion where a Schottky metal is to be deposited is etched, and then the Schottky metal is deposited, thereby forming a silicon carbide Schottky barrier diode.

摘要翻译： 本发明提供一种制造碳化硅肖特基势垒二极管的方法。 在该方法中，在n +衬底上沉积n-外延层。 通过热处理在n外延层上形成牺牲氧化膜，然后通过蚀刻暴露要形成复合氧化物膜的部分。 使用氮等离子体将氮注入到n外延层和牺牲氧化膜中。 氮化硅沉积在n外延层和牺牲氧化膜上。 氮化硅被热氧化以形成复合氧化膜。 对要沉积肖特金属的部分中的氧化膜进行蚀刻，然后沉积肖特基金属，从而形成碳化硅肖特基势垒二极管。

公开(公告)号：US08779439B2

公开(公告)日：2014-07-15

申请号：US13371702

申请日：2012-02-13

申请人： Kyoung Kook Hong ,  Jong Seok Lee

发明人： Kyoung Kook Hong ,  Jong Seok Lee

IPC分类号： H01L29/872

CPC分类号： H01L29/872 ,  H01L21/02529 ,  H01L21/26506 ,  H01L29/1608 ,  H01L29/36 ,  H01L29/66143

摘要： The present invention provides a silicon carbide Schottky-barrier diode device and a method for manufacturing the same. The silicon carbide Schottky bather diode device includes a primary n− epitaxial layer, an n+ epitaxial region, and a Schottky metal layer. The primary n− epitaxial layer is deposited on an n+ substrate joined with an ohmic metal layer at an undersurface thereof. The n+ epitaxial region is formed by implanting n+ ions into a central region of the primary n− epitaxial layer. The Schottky metal layer is deposited on the n+ epitaxial layer.

摘要翻译： 本发明提供一种碳化硅肖特基势垒二极管器件及其制造方法。 碳化硅肖特基二极体装置包括初级n外延层，n +外延区和肖特基金属层。 主n外延层沉积在与欧姆金属层的下表面连接的n +衬底上。 通过将n +离子注入初级n外延层的中心区域来形成n +外延区域。 肖特基金属层沉积在n +外延层上。

公开(公告)号：US20130115758A1

公开(公告)日：2013-05-09

申请号：US13372931

申请日：2012-02-14

申请人： Kyoung Kook Hong ,  Jong Seok Lee

发明人： Kyoung Kook Hong ,  Jong Seok Lee

IPC分类号： H01L21/20

CPC分类号： H01L29/872 ,  H01L21/046 ,  H01L21/0495 ,  H01L29/1608 ,  H01L29/6606

摘要： The present invention provides a method for manufacturing a silicon carbide Schottky barrier diode. In the method, an n− epitaxial layer is deposited on an n+ substrate. A sacrificial oxide film is formed on the n− epitaxial layer by heat treatment, and then a portion where a composite oxide film is to be formed is exposed by etching. Nitrogen is implanted into the n− epitaxial layer and the sacrificial oxide film using nitrogen plasma. A silicon nitride is deposited on the n− epitaxial layer and the sacrificial oxide film. The silicon nitride is thermally oxidized to form a composite oxide film. An oxide film in a portion where a Schottky metal is to be deposited is etched, and then the Schottky metal is deposited, thereby forming a silicon carbide Schottky barrier diode.

摘要翻译： 本发明提供一种制造碳化硅肖特基势垒二极管的方法。 在该方法中，在n +衬底上沉积n-外延层。 通过热处理在n外延层上形成牺牲氧化膜，然后通过蚀刻暴露要形成复合氧化物膜的部分。 使用氮等离子体将氮注入到n外延层和牺牲氧化膜中。 氮化硅沉积在n外延层和牺牲氧化膜上。 氮化硅被热氧化以形成复合氧化膜。 对要沉积肖特金属的部分中的氧化膜进行蚀刻，然后沉积肖特基金属，从而形成碳化硅肖特基势垒二极管。

公开(公告)号：US06321195B1

公开(公告)日：2001-11-20

申请号：US09295523

申请日：1999-04-21

申请人： Yun Keun Lee ,  Jong Seok Lee ,  Gi Bak Kim ,  Byoung Soo Lee

发明人： Yun Keun Lee ,  Jong Seok Lee ,  Gi Bak Kim ,  Byoung Soo Lee

IPC分类号： G10L1902

CPC分类号： G10L15/10 ,  G10L15/12 ,  G10L2015/223 ,  H04M1/271

摘要： The present invention relates to an automated dialing method for mobile telephones. According to the method, a user enters a telephone number via the keypad of the mobile phone, followed by speaking a corresponding codeword into the handset. The voice signal is encoded using the CODEC and vocoder already on board the mobile phone. The speech is divided into frames and each frame analyzed to ascertain its primary spectral features. These features are stored in memory as associated with the numeric keypad sequence. In recognition mode, the user speaks the codeword into the handset, which is analyzed in a like fashion as in training mode. The primary spectral features are compared with those stored in memory. When a match is declared according to preset criteria, the telephone number is automatically dialed by the mobile phone. Time warping techniques may be applied in the analysis to reduce timing variations.

摘要翻译： 本发明涉及移动电话的自动拨号方法。 根据该方法，用户经由移动电话的小键盘输入电话号码，然后将对应的码字说明到手机中。 语音信号使用已经在手机上的CODEC和声码器进行编码。 语音分为帧，每帧分析以确定其主要的频谱特征。 这些功能与数字键盘序列相关联地存储在存储器中。 在识别模式中，用户将手机中的码字说出，以与训练模式相似的方式进行分析。 将主要光谱特征与存储在存储器中的那些进行比较。 当根据预设条件声明比赛时，手机自动拨打电话号码。 时间扭曲技术可用于分析以减少时间变化。

公开(公告)号：US20150233565A1

公开(公告)日：2015-08-20

申请号：US14402315

申请日：2013-11-01

申请人： Jong Seok LEE ,  Myung Hee KIM ,  VIB. CO., LTD

发明人： Jong Seok Lee

IPC分类号： F21V29/56 ,  F21V8/00 ,  F21V31/04 ,  F21K99/00

CPC分类号： F21V29/56 ,  F21K9/60 ,  F21V29/58 ,  F21V31/005 ,  F21V31/04 ,  F21Y2101/00 ,  F21Y2115/10 ,  G02B6/0096

摘要： The present invention relates to an LED lighting device in a heat radiating, waterproof and moisture-proof structure using a fluid, wherein light from an LED element is concentrated to a lens such that the light with high intensity of illumination reaches a long distance and a frame is filled with a fluid such that heat radiation is expedited and water and moisture penetration phenomenon is prevented, thereby being used both under water and on the ground.The LED lighting device according to the present invention comprises: a front frame in which a fluid space is formed at its back side, through-holes are formed, at regular intervals, at its front side and a fluid inlet is formed; a back frame in a flat shape to be connected to the back side of the front frame to complete a frame and to close the fluid space; a PCB with LEDs installed at regular intervals, at its front side, to emit light through the through-holes of the front frame; and a fluid which is a high molecular compound extracted from mineral oil, to fill the fluid space of the front frame.

摘要翻译： 本发明涉及一种使用流体的散热，防水和防湿结构中的LED照明装置，其中来自LED元件的光集中到透镜，使得具有高照明强度的光达到较长距离，并且 框架充满流体，使得加热辐射，防止水分和水分渗透现象，从而在水和地面下使用。 根据本发明的LED照明装置包括：在其后侧形成有流体空间的前框架，其前侧以规则的间隔形成有通孔，并形成流体入口; 平面形状的后框架，连接到前框架的后侧以完成框架并关闭流体空间; 具有以规则间隔安装在其前侧的LED的PCB，以通过前框架的通孔发光; 以及从矿物油中提取的高分子化合物的流体，以填充前框架的流体空间。