摘要:
A automated teller machine (ATM) verifies the authenticity of the cheque based on image information acquired by a CIS unit and magnetic character information acquired by a MICR unit. The ATM further includes a plural cheque leaves determining unit for determining the presence of plural cheque leaves using the image information, the magnetic character information, and thickness information of the cheque.
摘要:
Disclosed is an LDMOS device, which is configured to reduce an electric field concentrated to a gate oxide film and lower an ON-resistance produced when the device conducts a forward action, and a method for manufacturing the same. More specifically, when an n-drift region is formed on a P-type substrate, a p-body is formed on the n-drift region through an epitaxial process, and then the p-body region is partially etched to form a plurality of p-epitaxial layers, so that when the device executes an action for blocking a reverse voltage, depletion layers are formed between the junction surfaces of the p-epitaxial layers and the n-drift region including the junction surfaces between the n-drift region and the p-body.
摘要:
The present invention provides a silicon carbide Schottky-barrier diode device and a method for manufacturing the same. The silicon carbide Schottky bather diode device includes a primary n− epitaxial layer, an n+ epitaxial region, and a Schottky metal layer. The primary n− epitaxial layer is deposited on an n+ substrate joined with an ohmic metal layer at an undersurface thereof. The n+ epitaxial region is formed by implanting n+ ions into a central region of the primary n− epitaxial layer. The Schottky metal layer is deposited on the n+ epitaxial layer.
摘要:
Disclosed is an LDMOS device, which is configured to reduce an electric field concentrated to a gate oxide film and lower an ON-resistance produced when the device conducts a forward action, and a method for manufacturing the same. More specifically, when an n-drift region is formed on a P-type substrate, a p-body is formed on the n-drift region through an epitaxial process, and then the p-body region is partially etched to form a plurality of p-epitaxial layers, so that when the device executes an action for blocking a reverse voltage, depletion layers are formed between the junction surfaces of the p-epitaxial layers and the n-drift region including the junction surfaces between the n-drift region and the p-body.
摘要:
The present invention provides a method for manufacturing a silicon carbide Schottky barrier diode. In the method, an n− epitaxial layer is deposited on an n+ substrate. A sacrificial oxide film is formed on the n− epitaxial layer by heat treatment, and then a portion where a composite oxide film is to be formed is exposed by etching. Nitrogen is implanted into the n− epitaxial layer and the sacrificial oxide film using nitrogen plasma. A silicon nitride is deposited on the n− epitaxial layer and the sacrificial oxide film. The silicon nitride is thermally oxidized to form a composite oxide film. An oxide film in a portion where a Schottky metal is to be deposited is etched, and then the Schottky metal is deposited, thereby forming a silicon carbide Schottky barrier diode.
摘要:
The present invention provides a silicon carbide Schottky-barrier diode device and a method for manufacturing the same. The silicon carbide Schottky bather diode device includes a primary n− epitaxial layer, an n+ epitaxial region, and a Schottky metal layer. The primary n− epitaxial layer is deposited on an n+ substrate joined with an ohmic metal layer at an undersurface thereof. The n+ epitaxial region is formed by implanting n+ ions into a central region of the primary n− epitaxial layer. The Schottky metal layer is deposited on the n+ epitaxial layer.
摘要:
The present invention provides a method for manufacturing a silicon carbide Schottky barrier diode. In the method, an n− epitaxial layer is deposited on an n+ substrate. A sacrificial oxide film is formed on the n− epitaxial layer by heat treatment, and then a portion where a composite oxide film is to be formed is exposed by etching. Nitrogen is implanted into the n− epitaxial layer and the sacrificial oxide film using nitrogen plasma. A silicon nitride is deposited on the n− epitaxial layer and the sacrificial oxide film. The silicon nitride is thermally oxidized to form a composite oxide film. An oxide film in a portion where a Schottky metal is to be deposited is etched, and then the Schottky metal is deposited, thereby forming a silicon carbide Schottky barrier diode.
摘要:
The present invention relates to an automated dialing method for mobile telephones. According to the method, a user enters a telephone number via the keypad of the mobile phone, followed by speaking a corresponding codeword into the handset. The voice signal is encoded using the CODEC and vocoder already on board the mobile phone. The speech is divided into frames and each frame analyzed to ascertain its primary spectral features. These features are stored in memory as associated with the numeric keypad sequence. In recognition mode, the user speaks the codeword into the handset, which is analyzed in a like fashion as in training mode. The primary spectral features are compared with those stored in memory. When a match is declared according to preset criteria, the telephone number is automatically dialed by the mobile phone. Time warping techniques may be applied in the analysis to reduce timing variations.
摘要:
The present invention relates to an LED lighting device in a heat radiating, waterproof and moisture-proof structure using a fluid, wherein light from an LED element is concentrated to a lens such that the light with high intensity of illumination reaches a long distance and a frame is filled with a fluid such that heat radiation is expedited and water and moisture penetration phenomenon is prevented, thereby being used both under water and on the ground.The LED lighting device according to the present invention comprises: a front frame in which a fluid space is formed at its back side, through-holes are formed, at regular intervals, at its front side and a fluid inlet is formed; a back frame in a flat shape to be connected to the back side of the front frame to complete a frame and to close the fluid space; a PCB with LEDs installed at regular intervals, at its front side, to emit light through the through-holes of the front frame; and a fluid which is a high molecular compound extracted from mineral oil, to fill the fluid space of the front frame.