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    Display device
    1.
    发明授权
    Display device 有权

    公开(公告)号：US10895792B2

    公开(公告)日：2021-01-19

    申请号：US16711544

    申请日：2019-12-12

    Applicant: Japan Display Inc.

    Inventor： Yohei Yamaguchi ,  Arichika Ishida ,  Hidekazu Miyake ,  Hiroto Miyake ,  Isao Suzumura

    IPC: H01L27/12 ,  H01L29/786 ,  G02F1/1368 ,  G02F1/1362 ,  G02F1/1343 ,  H01L29/423

    Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first metal layer on the insulating substrate, a first insulating layer on the insulating substrate and the first metal layer, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer and the first insulating layer, a second metal layer on the second insulating layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer. The first metal layer overlaps the second metal layer. A third metal layer contacts a top surface of the second metal layer and a top surface of the first metal layer.

    Display device
    5.
    发明授权
    Display device 有权

    公开(公告)号：US11474406B2

    公开(公告)日：2022-10-18

    申请号：US17126112

    申请日：2020-12-18

    Applicant: Japan Display Inc.

    Inventor： Yohei Yamaguchi ,  Arichika Ishida ,  Hidekazu Miyake ,  Hiroto Miyake ,  Isao Suzumura

    IPC: G02F1/1368 ,  G02F1/1362 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1343 ,  H01L29/423

    Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first metal layer on the insulating substrate, a first insulating layer on the insulating substrate and the first metal layer, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer and the first insulating layer, a second metal layer on the second insulating layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer. The first metal layer overlaps the second metal layer. A third metal layer contacts a top surface of the second metal layer and a top surface of the first metal layer.

    Semiconductor device
    7.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10088728B2

    公开(公告)日：2018-10-02

    申请号：US15662385

    申请日：2017-07-28

    Applicant: Japan Display Inc.

    Inventor： Yohei Yamaguchi ,  Arichika Ishida ,  Hidekazu Miyake ,  Hiroto Miyake ,  Isao Suzumura

    IPC: G02F1/1362 ,  H01L29/786 ,  H01L27/12 ,  G02F1/1368 ,  G02F1/1343 ,  H01L29/423

    Abstract: According to one embodiment, a display device includes an insulating substrate, a thin-film transistor including a semiconductor layer formed on a layer above the insulating substrate, a gate electrode which at least partly overlaps the semiconductor layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer, and a light shielding layer formed between the thin-film transistor and the insulating substrate to at least partly overlap the semiconductor layer, the light shielding layer electrically connected to the gate electrode.

    Display device
    8.
    发明授权
    Display device 有权

    公开(公告)号：US09964824B2

    公开(公告)日：2018-05-08

    申请号：US14793106

    申请日：2015-07-07

    Applicant: Japan Display Inc.

    Inventor： Isao Suzumura ,  Arichika Ishida ,  Norihiro Uemura ,  Hidekazu Miyake ,  Hiroto Miyake ,  Yohei Yamaguchi

    IPC: G09G3/36 ,  G02F1/1368 ,  G02F1/1333 ,  G02F1/1362 ,  H01L27/12

    CPC classification number: G02F1/1368 ,  G02F1/133345 ,  G02F1/136227 ,  H01L27/1288

    Abstract: According to one embodiment, a display device includes a TFT on an insulating substrate. The TFT includes a gate electrode, an insulating layer on the gate electrode, a semiconductor layer on the insulating layer, and a source electrode and a drain electrode each provided in contact with at least a part of the semiconductor layer. The source and drain electrodes have a laminated structure including a lower layer, an intermediate layer and an upper layer. The source and drain electrodes include sidewalls each including a first tapered portion on the upper layer side, a second tapered portion on the lower layer side and a sidewall protective film attached to the second tapered portion. The taper angle of the first tapered portion is smaller than that of the second tapered portion.

    Display device
    9.
    发明授权
    Display device 有权

    公开(公告)号：US10539846B2

    公开(公告)日：2020-01-21

    申请号：US16109834

    申请日：2018-08-23

    Applicant: Japan Display Inc.

    Inventor： Yohei Yamaguchi ,  Arichika Ishida ,  Hidekazu Miyake ,  Hiroto Miyake ,  Isao Suzumura

    IPC: G02F1/1368 ,  G02F1/1362 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1343 ,  H01L29/423

    Abstract: According to one embodiment, a display device includes an insulating substrate, a thin-film transistor including a semiconductor layer formed on a layer above the insulating substrate, a gate electrode which at least partly overlaps the semiconductor layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer, and a light shielding layer formed between the thin-film transistor and the insulating substrate to at least partly overlap the semiconductor layer, the light shielding layer electrically connected to the gate electrode.

    DISPLAY DEVICE
    10.
    发明申请
    DISPLAY DEVICE 有权
    显示设备

    公开(公告)号：US20160027921A1

    公开(公告)日：2016-01-28

    申请号：US14804395

    申请日：2015-07-21

    Applicant: Japan Display Inc.

    Inventor： Hidekazu MIYAKE ,  Arichika Ishida ,  Norihiro Uemura ,  Hiroto Miyake ,  Isao Suzumura ,  Yohei Yamaguchi

    IPC: H01L29/786 ,  H01L29/24 ,  G02F1/1368 ,  H01L27/12

    CPC classification number: H01L29/7869 ,  G02F1/1368 ,  G02F2001/13685 ,  G02F2202/104 ,  H01L27/1218 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78696

    Abstract: According to one embodiment, a display device includes thin-film transistor. The thin-film transistor includes a first semiconductor layer, a first insulating film, a gate electrode, a second insulating film, a second semiconductor layer, a first electrode and a second electrode. The gap between the bottom surface of the gate electrode and the upper surface of the first channel region of the first semiconductor layer is larger than the gap between the upper surface of the gate electrode and the bottom surface of the second channel region of the second semiconductor layer.

    Abstract translation: 根据一个实施例，显示装置包括薄膜晶体管。 薄膜晶体管包括第一半导体层，第一绝缘膜，栅电极，第二绝缘膜，第二半导体层，第一电极和第二电极。 栅电极的底表面和第一半导体层的第一沟道区的上表面之间的间隙大于栅电极的上表面和第二半导体的第二沟道区的底表面之间的间隙 层。

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