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公开(公告)号：US20140254234A1
公开(公告)日：2014-09-11
申请号：US13788028
申请日：2013-03-07
申请人： Jason G. Sandri , Horaira Abu , Charles A. Peterson , Matthew B. Pedersen , Brian Harris , Ian S. Walker , Monib Ahmed
发明人： Jason G. Sandri , Horaira Abu , Charles A. Peterson , Matthew B. Pedersen , Brian Harris , Ian S. Walker , Monib Ahmed
IPC分类号： G11C17/16
CPC分类号： G11C17/16 , G06F11/10 , G06F12/1408 , G06F21/64 , G06F21/75 , G06F21/755 , G06F21/76 , G06F21/78 , G06F21/79 , G11C7/24 , G11C8/06 , G11C17/18 , G11C2029/4402
摘要： In accordance with some embodiments, the way in which the fuses are sensed and, particularly, their order may be made more random so that it is much more difficult to simply exercise the device and determine all the values of the storage elements within the fuse array. One result is a more secure storage device.
摘要翻译： 根据一些实施例，感测熔丝的方式，特别是其顺序可以更随机，使得简单地锻炼设备并且确定熔丝阵列内的存储元件的所有值更加困难 。 一个结果是更安全的存储设备。
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公开(公告)号：US20120248546A1
公开(公告)日：2012-10-04
申请号：US13077681
申请日：2011-03-31
申请人： Xianghong Tong , Zhanping Chen , Walid M. Hafez , Zhiyong Ma , Sarvesh H. Kulkarni , Kevin X. Zhang , Matthew B. Pedersen , Kevin D. Johnson
发明人： Xianghong Tong , Zhanping Chen , Walid M. Hafez , Zhiyong Ma , Sarvesh H. Kulkarni , Kevin X. Zhang , Matthew B. Pedersen , Kevin D. Johnson
IPC分类号： H01L23/525 , H01L21/44
CPC分类号： H01L23/5252 , H01L21/44 , H01L27/0207 , H01L27/0629 , H01L27/11206 , H01L29/861 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming and using a microelectronic structure are described. Embodiments include forming a diode between a metal fuse gate and a PMOS device, wherein the diode is disposed between a contact of the metal fuse gate and a contact of the PMOS device, and wherein the diode couples the contact of the metal fuse gate to the contact of the PMOS device.
摘要翻译： 描述了形成和使用微电子结构的方法。 实施例包括在金属熔丝栅极和PMOS器件之间形成二极管，其中二极管设置在金属熔丝栅极的触点和PMOS器件的触点之间，并且其中二极管将金属熔丝栅极的触点耦合到 PMOS器件的接触。
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公开(公告)号：US08618613B2
公开(公告)日：2013-12-31
申请号：US13077681
申请日：2011-03-31
申请人： Xianghong Tong , Zhanping Chen , Walid M. Hafez , Zhiyong Ma , Sarvesh H. Kulkarni , Kevin X. Zhang , Matthew B. Pedersen , Kevin D. Johnson
发明人： Xianghong Tong , Zhanping Chen , Walid M. Hafez , Zhiyong Ma , Sarvesh H. Kulkarni , Kevin X. Zhang , Matthew B. Pedersen , Kevin D. Johnson
CPC分类号： H01L23/5252 , H01L21/44 , H01L27/0207 , H01L27/0629 , H01L27/11206 , H01L29/861 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming and using a microelectronic structure are described. Embodiments include forming a diode between a metal fuse gate and a PMOS device, wherein the diode is disposed between a contact of the metal fuse gate and a contact of the PMOS device, and wherein the diode couples the contact of the metal fuse gate to the contact of the PMOS device.
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公开(公告)号：US20140103448A1
公开(公告)日：2014-04-17
申请号：US14134097
申请日：2013-12-19
申请人： Xianghong Tong , Zhanping Chen , Walid M. Hafez , Zhiyong Ma , Sarvesh H. Kulkarni , Kevin X. Zhang , Matthew B. Pedersen , Kevin D. Johnson
发明人： Xianghong Tong , Zhanping Chen , Walid M. Hafez , Zhiyong Ma , Sarvesh H. Kulkarni , Kevin X. Zhang , Matthew B. Pedersen , Kevin D. Johnson
IPC分类号： H01L23/525 , H01L21/44
CPC分类号： H01L23/5252 , H01L21/44 , H01L27/0207 , H01L27/0629 , H01L27/11206 , H01L29/861 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming and using a microelectronic structure are described. Embodiments include forming a diode between a metal fuse gate and a PMOS device, wherein the diode is disposed between a contact of the metal fuse gate and a contact of the PMOS device, and wherein the diode couples the contact of the metal fuse gate to the contact of the PMOS device.
摘要翻译： 描述了形成和使用微电子结构的方法。 实施例包括在金属熔丝栅极和PMOS器件之间形成二极管，其中二极管设置在金属熔丝栅极的触点和PMOS器件的触点之间，并且其中二极管将金属熔丝栅极的触点耦合到 PMOS器件的接触。
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