Field plated Schottky diode
    3.
    发明授权
    Field plated Schottky diode 有权
    场镀肖特基二极管

    公开(公告)号:US06690037B1

    公开(公告)日:2004-02-10

    申请号:US09653616

    申请日:2000-08-31

    IPC分类号: H01L2974

    CPC分类号: H01L29/402 H01L29/872

    摘要: A Schottky diode is fabricated by a sequence of fabrication by a sequence of fabrication steps. An active region of a semiconductor substrate is defined in which a Schottky diode is fabricated. At least first and second layers of insulating material are applied over the active area. A first layer of insulating material, having a first etching rate, is applied over the active area. A second layer of insulating material having a second, greater, etch rate is applied over the first layer of insulating material to a thickness that is about twice the thickness of the first layer of insulating material. The insulating material is patterned and a window is etched through the layers of insulating material to the semiconductor substrate. Metal is applied and unwanted metal is etched away leaving metal in the window forming a Schottky contact therein. One or more barrier layers may be employed.

    摘要翻译: 通过一系列制造步骤制造肖特基二极管。 定义半导体衬底的有源区,其中制造肖特基二极管。 至少第一和第二层绝缘材料施加在有效区域上。 在有源区域上施加具有第一蚀刻速率的第一绝缘材料层。 具有第二,更大蚀刻速率的第二层绝缘材料施加在绝缘材料的第一层上,其厚度约为第一绝缘材料层厚度的两倍。 对绝缘材料进行图案化,并且通过绝缘材料层蚀刻窗口到半导体衬底。 金属被施加并且不需要的金属被蚀刻掉,留下窗口中的金属在其中形成肖特基接触。 可以采用一个或多个阻挡层。