公开(公告)号：US20240215467A1

公开(公告)日：2024-06-27

申请号：US18476635

申请日：2023-09-28

Applicant: Kioxia Corporation

Inventor： Hiroki KAWAI ,  Takeshi IWASAKI ,  Katsuyoshi KOMATSU ,  Rina NOMOTO ,  Zhu QI ,  Takayuki SASAKI

IPC: H10N70/00 ,  G11C5/06 ,  H10B63/00

CPC classification number: H10N70/8828 ,  G11C5/06 ,  H10B63/80 ,  H10N70/883

Abstract: A memory device of embodiments includes a memory cell including: a first conductive layer; a second conductive layer; a third conductive layer provided between the first conductive layer and the second conductive layer; a variable resistance layer provided between the first conductive layer and the third conductive layer; and a switching layer provided between the third conductive layer and the second conductive layer. The switching layer contains antimony (Sb), a second element, adn an oxide of a first element. The first element is at least one element selected from a group consisting of zirconium (Zr), hafnium (Hf), yttrium (Y), tantalum (Ta), lanthanum (La), cerium (Ce), magnesium (Mg), and titanium (Ti). The second element is at least one element selected from a group consisting of aluminum (Al), zinc (Zn), and gallium (Ga).

公开(公告)号：US20230093157A1

公开(公告)日：2023-03-23

申请号：US17684331

申请日：2022-03-01

Applicant: KIOXIA CORPORATION

Inventor： Shigeyuki HIRAYAMA ,  Takayuki SASAKI ,  Yukihiro NOMURA ,  Tsunehiro INO

IPC: H01L45/00 ,  H01L27/24

Abstract: A storage device includes a first electrode, a second electrode, and a resistance change storage layer between the first and second electrodes. The storage layer is either in a first resistance state or in a second resistance state having a resistance higher than the first resistance state and contains at least two elements selected from a group consisting of germanium, antimony, and tellurium. The storage device further includes an interface layer between the first electrode and the resistance change storage layer. The interface layer contains at least one of the elements of the resistance change storage layer and includes a conductive region and an insulating region.

公开(公告)号：US20220310918A1

公开(公告)日：2022-09-29

申请号：US17410771

申请日：2021-08-24

Applicant: KIOXIA CORPORATION

Inventor： Takayuki SASAKI ,  Yukihiro NOMURA

IPC: H01L45/00 ,  H01L27/24 ,  G11C13/00

Abstract: A storage device includes a resistance change memory element including a first electrode, a second electrode, a resistance change layer between the first and second electrodes, including at least two elements selected from a group consisting of germanium (Ge), antimony (Sb), and tellurium (Te), and having a crystal structure with a c-axis oriented in a first direction from the first electrode toward the second electrode, and a first layer between the first electrode and the resistance change layer and including nitrogen (N) and at least one of silicon (Si) or germanium (Ge).