-
公开(公告)号：US11537043B2
公开(公告)日：2022-12-27
申请号：US17161645
申请日：2021-01-28
Applicant: KLA-TENCOR CORPORATION
Inventor： Yoel Feler , Vladimir Levinski , Roel Gronheid , Sharon Aharon , Evgeni Gurevich , Anna Golotsvan , Mark Ghinovker
Abstract: Metrology methods and targets are provided for reducing or eliminating a difference between a device pattern position and a target pattern position while maintaining target printability, process compatibility and optical contrast—in both imaging and scatterometry metrology. Pattern placement discrepancies may be reduced by using sub-resolved assist features in the mask design which have a same periodicity (fine pitch) as the periodic structure and/or by calibrating the measurement results using PPE (pattern placement error) correction factors derived by applying learning procedures to specific calibration terms, in measurements and/or simulations. Metrology targets are disclosed with multiple periodic structures at the same layer (in addition to regular target structures), e.g., in one or two layers, which are used to calibrate and remove PPE, especially when related to asymmetric effects such as scanner aberrations, off-axis illumination and other error sources.
-
公开(公告)号：US20170336198A1
公开(公告)日：2017-11-23
申请号：US15613119
申请日：2017-06-02
Applicant: KLA-Tencor Corporation
Inventor： Michael Adel , Walter D. Mieher , Mark Ghinovker
CPC classification number: G01B11/272 , G01N21/4785 , G01N21/9501 , G03F7/70633 , H01L21/68 , H01L21/682 , H01L23/544 , Y10S438/975
Abstract: Disclosed is a method for determining an overlay error between at least two layers in a multiple layer sample. An imaging optical system is used to measure multiple measured optical signals from multiple periodic targets on the sample, and the targets each have a first structure in a first layer and a second structure in a second layer. There are predefined offsets between the first and second structures A scatterometry overlay technique is used to analyze the measured optical signals of the periodic targets and the predefined offsets of the first and second structures of the periodic targets to thereby determine an overlay error between the first and second structures of the periodic targets. The scatterometry overlay technique is a phase based technique, and the imaging optical system is configured to have an illumination and/or collection numerical aperture (NA) and/or spectral band selected so that a specific diffraction order is collected and measured for the plurality of measured optical signals. In one aspect, the number of periodic targets equals half the number of unknown parameters.
-
公开(公告)号：US09784987B2
公开(公告)日：2017-10-10
申请号：US14799132
申请日：2015-07-14
Applicant: KLA-Tencor Corporation
Inventor： Andrew V. Hill , Amnon Manassen , Barak Bringoltz , Ohad Bachar , Mark Ghinovker , Zeev Bomzon , Daniel Kandel
CPC classification number: G02B27/58 , G01B11/00 , G01N21/47 , G01N21/55 , G01N2201/06113 , G01N2201/068 , G03F7/70625 , G03F7/70633
Abstract: The disclosure is directed to various apodization schemes for pupil imaging scatterometry. In some embodiments, the system includes an apodizer disposed within a pupil plane of the illumination path. In some embodiments, the system further includes an illumination scanner configured to scan a surface of the sample with at least a portion of apodized illumination. In some embodiments, the system includes an apodized pupil configured to provide a quadrupole illumination function. In some embodiments, the system further includes an apodized collection field stop. The various embodiments described herein may be combined to achieve certain advantages.
-
4.发明申请公开(公告)号：US20160047744A1
公开(公告)日：2016-02-18
申请号：US14873120
申请日：2015-10-01
Applicant: KLA-Tencor Corporation
Inventor： Michael Adel , Walter D. Mieher , Mark Ghinovker
CPC classification number: G01B11/272 , G01N21/4785 , G01N21/9501 , G03F7/70633 , H01L21/68 , H01L21/682 , H01L23/544 , Y10S438/975
Abstract: Disclosed is a scatterometry mark for determining an overlay error, critical dimension, or profile of the mark. The mark includes a first plurality of periodic structures on a first layer, a second plurality of periodic structures on a second layer, and a third plurality of periodic structures on a third layer that is underneath the first and second layer. The third periodic structures are perpendicular to the first and second structures, and the third periodic structures have one or more characteristics so as to result in a plurality of lower structures beneath the third periodic structures being screened from significantly affecting at least part of a spectrum of a plurality of scattered signals detected from the first and second periodic structures for determining an overlay error, critical dimension, or profile of the first and second periodic structures or at least one of such detected scattered signals.
Abstract translation: 公开了用于确定标记的重叠误差，临界尺寸或轮廓的散射测量标记。 标记包括第一层上的第一多个周期性结构，第二层上的第二多个周期性结构以及位于第一和第二层下面的第三层上的第三多个周期性结构。 第三周期性结构垂直于第一和第二结构，并且第三周期结构具有一个或多个特性，以便导致第三周期结构下方的多个下部结构被屏蔽，从而显着影响至少部分频谱 从第一和第二周期结构检测的多个散射信号，用于确定第一和第二周期结构的重叠误差，临界尺寸或轮廓，或这些检测到的散射信号中的至少一个。
-
公开(公告)号：US20150316783A1
公开(公告)日：2015-11-05
申请号：US14799132
申请日：2015-07-14
Applicant: KLA-Tencor Corporation
Inventor： Andrew V. Hill , Amnon Manassen , Barak Bringoltz , Ohad Bachar , Mark Ghinovker , Zeev Bomzon , Daniel Kandel
CPC classification number: G02B27/58 , G01B11/00 , G01N21/47 , G01N21/55 , G01N2201/06113 , G01N2201/068 , G03F7/70625 , G03F7/70633
Abstract: The disclosure is directed to various apodization schemes for pupil imaging scatterometry. In some embodiments, the system includes an apodizer disposed within a pupil plane of the illumination path. In some embodiments, the system further includes an illumination scanner configured to scan a surface of the sample with at least a portion of apodized illumination. In some embodiments, the system includes an apodized pupil configured to provide a quadrupole illumination function. In some embodiments, the system further includes an apodized collection field stop. The various embodiments described herein may be combined to achieve certain advantages.
Abstract translation: 本公开涉及用于瞳孔成像散射测量的各种变迹方案。 在一些实施例中，该系统包括设置在照明路径的光瞳平面内的变迹器。 在一些实施例中，系统还包括照明扫描器，其构造成用至少一部分变迹照明来扫描样品的表面。 在一些实施例中，系统包括配置成提供四极照明功能的变迹瞳孔。 在一些实施例中，系统还包括变迹集合区域停止。 可以组合这里描述的各种实施例以实现某些优点。
-
Patent Agency Ranking
公开(公告)号：US20230099105A1
公开(公告)日：2023-03-30
申请号：US18076375
申请日：2022-12-06
Applicant: KLA-TENCOR CORPORATION
Inventor： Yoel Feler , Vladimir Levinski , Roel Gronheid , Sharon Aharon , Evgeni Gurevich , Anna Golotsvan , Mark Ghinovker
Abstract: Metrology methods and targets are provided for reducing or eliminating a difference between a device pattern position and a target pattern position while maintaining target printability, process compatibility and optical contrast—in both imaging and scatterometry metrology. Pattern placement discrepancies may be reduced by using sub-resolved assist features in the mask design which have a same periodicity (fine pitch) as the periodic structure and/or by calibrating the measurement results using PPE (pattern placement error) correction factors derived by applying learning procedures to specific calibration terms, in measurements and/or simulations. Metrology targets are disclosed with multiple periodic structures at the same layer (in addition to regular target structures), e.g., in one or two layers, which are used to calibrate and remove PPE, especially when related to asymmetric effects such as scanner aberrations, off-axis illumination and other error sources.
-
公开(公告)号：US11137692B2
公开(公告)日：2021-10-05
申请号：US16313972
申请日：2018-11-29
Applicant: KLA-TENCOR CORPORATION
Inventor： Yoel Feler , Mark Ghinovker , Alexander Svizher , Vladimir Levinski , Inna Tarshish-Shapir
Abstract: Metrology targets, design methods and measurement methods thereof are provided with periodic structure(s) which are oblique with respect to orthogonal production axes X and Y of the lithography tool—enabling more accurate overlay measurements of devices having diagonal (oblique, tilted) elements such as DRAM devices. One or more oblique periodic structure(s) may be used to provide one- or two-dimensional signals, with respect to one or more layers, possibly providing overlay measurements for multiple steps applied to one layer. The oblique periodic structure(s) may be used to modify current metrology target designs (e.g., imaging targets and/or scatterometry targets) or to design new targets, and measurement algorithms may be adjusted respectively to derive signals from the oblique periodic structure(s) and/or to provide pre-processed images thereof. The disclosed targets are process compatible and reflect more accurately the device overlays with respect to various process steps.
-
公开(公告)号：US10705434B2
公开(公告)日：2020-07-07
申请号：US15351995
申请日：2016-11-15
Applicant: KLA-Tencor Corporation
Inventor： Michael E. Adel , Inna Tarshish-Shapir , Jeremy (Shi-Ming) Wei , Mark Ghinovker
Abstract: Metrology target design methods and verification targets are provided. Methods include using OCD data related to designed metrology target(s) as an estimation of a discrepancy between a target model and a corresponding actual target on a wafer, and adjusting a metrology target design model to compensate for the estimated discrepancy. The dedicated verification targets may include overlay target features and be size optimized to be measurable by an OCD sensor, to enable compensation for inaccuracies resulting from production process variation. Methods also include modifications to workflows between manufacturers and metrology vendors which provide enabled higher fidelity metrology target design models and ultimately higher accuracy of metrology measurements.
-
公开(公告)号：US20190250504A1
公开(公告)日：2019-08-15
申请号：US15776588
申请日：2018-04-16
Applicant: KLA-TENCOR CORPORATION
Inventor： Yoel Feler , Vladimir Levinski , Roel Gronheid , Sharon Aharon , Evgeni Gurevich , Anna Golotsvan , Mark Ghinovker
CPC classification number: G03F1/84 , G01N21/00 , G03F1/26 , G03F1/44 , G03F7/70283 , G03F7/70633 , G03F7/70683 , G06F17/5068
Abstract: Metrology methods and targets are provided for reducing or eliminating a difference between a device pattern position and a target pattern position while maintaining target printability, process compatibility and optical contrast—in both imaging and scatterometry metrology. Pattern placement discrepancies may be reduced by using sub-resolved assist features in the mask design which have a same periodicity (fine pitch) as the periodic structure and/or by calibrating the measurement results using PPE (pattern placement error) correction factors derived by applying learning procedures to specific calibration terms, in measurements and/or simulations. Metrology targets are disclosed with multiple periodic structures at the same layer (in addition to regular target structures), e.g., in one or two layers, which are used to calibrate and remove PPE, especially when related to asymmetric effects such as scanner aberrations, off-axis illumination and other error sources.
-
公开(公告)号：US20190122357A1
公开(公告)日：2019-04-25
申请号：US15739381
申请日：2017-10-22
Applicant: KLA-Tencor Corporation
Inventor： Tzahi Grunzweig , Nadav Gutman , David Gready , Mark Ghinovker , Vladimir Levinski , Claire E. Staniunas , Nimrod Shuall , Yuri Paskover
Abstract: Systems and methods are provided, which calculate overlay misregistration error estimations from analyzed measurements of each ROI (region of interest) in at least one metrology imaging target, and incorporate the calculated overlay misregistration error estimations in a corresponding estimation of overlay misregistration. Disclosed embodiments provide a graduated and weighted analysis of target quality which may be integrated in a continuous manner into the metrology measurement processes, and moreover evaluates target quality in terms of overlay misregistration, which forms a common basis for evaluation of errors from different sources, such as characteristics of production steps, measurement parameters and target characteristics. Such common basis then enables any of combining various error sources to give a single number associated with measurement fidelity, analyzing various errors at wafer, lot and process levels, and/or to trade-off the resulting accuracy for throughput by reducing the number of measurements, in a controlled manner.
-
-
-
-
-
-
-
-
-
Search Results
35
records
(took 0.023 seconds)
