Device-like metrology targets
    2.
    发明授权

    公开(公告)号:US11709433B2

    公开(公告)日:2023-07-25

    申请号:US17689934

    申请日:2022-03-08

    IPC分类号: G03F7/20 G03F7/00

    摘要: Metrology targets, production processes and optical systems are provided, which enable metrology of device-like targets. Supplementary structure(s) may be introduced in the target to interact optically with the bottom layer and/or with the top layer of the target and target cells configurations enable deriving measurements of device-characteristic features. For example, supplementary structure(s) may be designed to yield Moiré patterns with one or both layers, and metrology parameters may be derived from these patterns. Device production processes were adapted to enable production of corresponding targets, which may be measured by standard or by provided modified optical systems, configured to enable phase measurements of the Moiré patterns.

    Reduction or elimination of pattern placement error in metrology measurements

    公开(公告)号:US11537043B2

    公开(公告)日:2022-12-27

    申请号:US17161645

    申请日:2021-01-28

    摘要: Metrology methods and targets are provided for reducing or eliminating a difference between a device pattern position and a target pattern position while maintaining target printability, process compatibility and optical contrast—in both imaging and scatterometry metrology. Pattern placement discrepancies may be reduced by using sub-resolved assist features in the mask design which have a same periodicity (fine pitch) as the periodic structure and/or by calibrating the measurement results using PPE (pattern placement error) correction factors derived by applying learning procedures to specific calibration terms, in measurements and/or simulations. Metrology targets are disclosed with multiple periodic structures at the same layer (in addition to regular target structures), e.g., in one or two layers, which are used to calibrate and remove PPE, especially when related to asymmetric effects such as scanner aberrations, off-axis illumination and other error sources.

    Topographic phase control for overlay measurement

    公开(公告)号:US11314173B2

    公开(公告)日:2022-04-26

    申请号:US16672483

    申请日:2019-11-03

    摘要: Metrology tools and methods are provided, which estimate the effect of topographic phases corresponding to different diffraction orders, which result from light scattering on periodic targets, and adjust the measurement conditions to improve measurement accuracy. In imaging, overlay error magnification may be reduced by choosing appropriate measurement conditions based on analysis of contrast function behavior, changing illumination conditions (reducing spectrum width and illumination NA), using polarizing targets and/or optical systems, using multiple defocusing positions etc. On-the-fly calibration of measurement results may be carried out in imaging or scatterometry using additional measurements or additional target cells.

    Off-axis illumination overlay measurement using two-diffracted orders imaging

    公开(公告)号:US11281111B2

    公开(公告)日:2022-03-22

    申请号:US16317603

    申请日:2018-12-14

    IPC分类号: G03F7/20 G01B11/27 G01B11/14

    摘要: Metrology methods and tools are provided, which enhance the accuracy of the measurements and enable simplification of the measurement process as well as improving the correspondence between the metrology targets and the semiconductor devices. Methods comprise illuminating the target in a Littrow configuration to yield a first measurement signal comprising a −1st diffraction order and a 0th diffraction order and a second measurement signal comprising a +1st distraction order and a 0th diffraction order, wherein the −1st diffraction order of the first measurement signal and the +1st diffraction order of the second measurement signal are diffracted at 180° to a direction of the illumination, performing a first measurement of the first measurement signal and a second measurement of the second measurement signal, and deriving metrology metric(s) therefrom. Optionally, a reflected 0th diffraction order may be split to yield components which interact with the −1st and +1st diffraction orders.

    Topographic Phase Control For Overlay Measurement

    公开(公告)号:US20210255551A1

    公开(公告)日:2021-08-19

    申请号:US17241006

    申请日:2021-04-26

    摘要: Metrology tools and methods are provided, which estimate the effect of topographic phases corresponding to different diffraction orders, which result from light scattering on periodic targets, and adjust the measurement conditions to improve measurement accuracy. In imaging, overlay error magnification may be reduced by choosing appropriate measurement conditions based on analysis of contrast function behavior, changing illumination conditions (reducing spectrum width and illumination NA), using polarizing targets and/or optical systems, using multiple defocusing positions etc. On-the-fly calibration of measurement results may be carried out in imaging or scatterometry using additional measurements or additional target cells.

    Determining the impacts of stochastic behavior on overlay metrology data

    公开(公告)号:US10901325B2

    公开(公告)日:2021-01-26

    申请号:US15763662

    申请日:2018-02-27

    摘要: Methods are provided for designing metrology targets and estimating the uncertainty error of metrology metric values with respect to stochastic noise such as line properties (e.g., line edge roughness, LER). Minimal required dimensions of target elements may be derived from analysis of the line properties and uncertainty error of metrology measurements, by either CDSEM (critical dimension scanning electron microscopy) or optical systems, with corresponding targets. The importance of this analysis is emphasized in view of the finding that stochastic noise may have increased importance with when using more localized models such as CPE (correctables per exposure). The uncertainty error estimation may be used for target design, enhancement of overlay estimation and evaluation of measurement reliability in multiple contexts.

    Reticle optimization algorithms and optimal target design

    公开(公告)号:US10754261B2

    公开(公告)日:2020-08-25

    申请号:US15571427

    申请日:2017-06-06

    IPC分类号: G03F7/20 G03F1/44

    摘要: Metrology target designs on the reticle and on the wafer, and target design and processing methods are provided. Target designs comprise coarse pitched periodic structures having fine pitched sub-elements, which vary in sub-element CD and/or height, an orthogonal periodic structure, perpendicular to the measurement direction, with an orthogonal unresolved pitch among periodically recurring bars, which provide a calibration parameter for achieving well-printed targets. Orthogonal periodic structures may be designed on the reticle and be unresolved, or be applied in cut patterns on the process layer, with relatively low sensitivity to the cut layer overlay. Designed targets may be used for overlay metrology as well as for measuring process parameters such as scanner aberrations and pitch walk.

    Systems and methods for metrology with layer-specific illumination spectra

    公开(公告)号:US10444161B2

    公开(公告)日:2019-10-15

    申请号:US15608766

    申请日:2017-05-30

    摘要: A metrology system includes an image device and a controller. The image device includes a spectrally-tunable illumination device and a detector to generate images of a sample having metrology target elements on two or more sample layers based on radiation emanating from the sample in response to illumination from the spectrally-tunable illumination device. The controller determines layer-specific imaging configurations of the imaging device to image the metrology target elements on the two or more sample layers within a selected image quality tolerance in which each layer-specific imaging configuration includes an illumination spectrum from the spectrally-tunable illumination device. The controller further receives one or more images of the metrology target elements on the two or more sample layers generated using the layer-specific imaging configurations. The controller further provides a metrology measurement based on the one or more images of the metrology target elements on the two or more sample layers.

    Near field metrology
    10.
    发明授权

    公开(公告)号:US10261014B2

    公开(公告)日:2019-04-16

    申请号:US14583447

    申请日:2014-12-26

    摘要: Metrology systems and methods are provided herein, which comprise an optical element that is positioned between an objective lens of the system and a target. The optical element is arranged to enhance evanescent modes of radiation reflected by the target. Various configurations are disclosed: the optical element may comprise a solid immersion lens, a combination of Moiré-elements and solid immersion optics, dielectric-metal-dielectric stacks of different designs, and resonating elements to amplify the evanescent modes of illuminating radiation. The metrology systems and methods are configurable to various metrology types, including imaging and scatterometry methods.