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公开(公告)号：US11537043B2
公开(公告)日：2022-12-27
申请号：US17161645
申请日：2021-01-28
Applicant: KLA-TENCOR CORPORATION
Inventor： Yoel Feler , Vladimir Levinski , Roel Gronheid , Sharon Aharon , Evgeni Gurevich , Anna Golotsvan , Mark Ghinovker
Abstract: Metrology methods and targets are provided for reducing or eliminating a difference between a device pattern position and a target pattern position while maintaining target printability, process compatibility and optical contrast—in both imaging and scatterometry metrology. Pattern placement discrepancies may be reduced by using sub-resolved assist features in the mask design which have a same periodicity (fine pitch) as the periodic structure and/or by calibrating the measurement results using PPE (pattern placement error) correction factors derived by applying learning procedures to specific calibration terms, in measurements and/or simulations. Metrology targets are disclosed with multiple periodic structures at the same layer (in addition to regular target structures), e.g., in one or two layers, which are used to calibrate and remove PPE, especially when related to asymmetric effects such as scanner aberrations, off-axis illumination and other error sources.
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Patent Agency Ranking
公开(公告)号：US10901325B2
公开(公告)日：2021-01-26
申请号：US15763662
申请日：2018-02-27
Applicant: KLA-TENCOR CORPORATION
Inventor： Evgeni Gurevich , Michael E. Adel , Roel Gronheid , Yoel Feler , Vladimir Levinski , Dana Klein , Sharon Aharon
Abstract: Methods are provided for designing metrology targets and estimating the uncertainty error of metrology metric values with respect to stochastic noise such as line properties (e.g., line edge roughness, LER). Minimal required dimensions of target elements may be derived from analysis of the line properties and uncertainty error of metrology measurements, by either CDSEM (critical dimension scanning electron microscopy) or optical systems, with corresponding targets. The importance of this analysis is emphasized in view of the finding that stochastic noise may have increased importance with when using more localized models such as CPE (correctables per exposure). The uncertainty error estimation may be used for target design, enhancement of overlay estimation and evaluation of measurement reliability in multiple contexts.
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公开(公告)号：US12013634B2
公开(公告)日：2024-06-18
申请号：US18076375
申请日：2022-12-06
Applicant: KLA-TENCOR CORPORATION
Inventor： Yoel Feler , Vladimir Levinski , Roel Gronheid , Sharon Aharon , Evgeni Gurevich , Anna Golotsvan , Mark Ghinovker
CPC classification number: G03F1/84 , G01N21/00 , G03F1/26 , G03F1/44 , G03F7/70283 , G03F7/70633 , G03F7/70683 , G06F30/39
Abstract: Metrology methods and targets are provided for reducing or eliminating a difference between a device pattern position and a target pattern position while maintaining target printability, process compatibility and optical contrast—in both imaging and scatterometry metrology. Pattern placement discrepancies may be reduced by using sub-resolved assist features in the mask design which have a same periodicity (fine pitch) as the periodic structure and/or by calibrating the measurement results using PPE (pattern placement error) correction factors derived by applying learning procedures to specific calibration terms, in measurements and/or simulations. Metrology targets are disclosed with multiple periodic structures at the same layer (in addition to regular target structures), e.g., in one or two layers, which are used to calibrate and remove PPE, especially when related to asymmetric effects such as scanner aberrations, off-axis illumination and other error sources.
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公开(公告)号：US20210149296A1
公开(公告)日：2021-05-20
申请号：US17161645
申请日：2021-01-28
Applicant: KLA-TENCOR CORPORATION
Inventor： Yoel Feler , Vladimir Levinski , Roel Gronheid , Sharon Aharon , Evgeni Gurevich , Anna Golotsvan , Mark Ghinovker
Abstract: Metrology methods and targets are provided for reducing or eliminating a difference between a device pattern position and a target pattern position while maintaining target printability, process compatibility and optical contrast—in both imaging and scatterometry metrology. Pattern placement discrepancies may be reduced by using sub-resolved assist features in the mask design which have a same periodicity (fine pitch) as the periodic structure and/or by calibrating the measurement results using PPE (pattern placement error) correction factors derived by applying learning procedures to specific calibration terms, in measurements and/or simulations. Metrology targets are disclosed with multiple periodic structures at the same layer (in addition to regular target structures), e.g., in one or two layers, which are used to calibrate and remove PPE, especially when related to asymmetric effects such as scanner aberrations, off-axis illumination and other error sources.
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公开(公告)号：US20230099105A1
公开(公告)日：2023-03-30
申请号：US18076375
申请日：2022-12-06
Applicant: KLA-TENCOR CORPORATION
Inventor： Yoel Feler , Vladimir Levinski , Roel Gronheid , Sharon Aharon , Evgeni Gurevich , Anna Golotsvan , Mark Ghinovker
Abstract: Metrology methods and targets are provided for reducing or eliminating a difference between a device pattern position and a target pattern position while maintaining target printability, process compatibility and optical contrast—in both imaging and scatterometry metrology. Pattern placement discrepancies may be reduced by using sub-resolved assist features in the mask design which have a same periodicity (fine pitch) as the periodic structure and/or by calibrating the measurement results using PPE (pattern placement error) correction factors derived by applying learning procedures to specific calibration terms, in measurements and/or simulations. Metrology targets are disclosed with multiple periodic structures at the same layer (in addition to regular target structures), e.g., in one or two layers, which are used to calibrate and remove PPE, especially when related to asymmetric effects such as scanner aberrations, off-axis illumination and other error sources.
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公开(公告)号：US20190250504A1
公开(公告)日：2019-08-15
申请号：US15776588
申请日：2018-04-16
Applicant: KLA-TENCOR CORPORATION
Inventor： Yoel Feler , Vladimir Levinski , Roel Gronheid , Sharon Aharon , Evgeni Gurevich , Anna Golotsvan , Mark Ghinovker
CPC classification number: G03F1/84 , G01N21/00 , G03F1/26 , G03F1/44 , G03F7/70283 , G03F7/70633 , G03F7/70683 , G06F17/5068
Abstract: Metrology methods and targets are provided for reducing or eliminating a difference between a device pattern position and a target pattern position while maintaining target printability, process compatibility and optical contrast—in both imaging and scatterometry metrology. Pattern placement discrepancies may be reduced by using sub-resolved assist features in the mask design which have a same periodicity (fine pitch) as the periodic structure and/or by calibrating the measurement results using PPE (pattern placement error) correction factors derived by applying learning procedures to specific calibration terms, in measurements and/or simulations. Metrology targets are disclosed with multiple periodic structures at the same layer (in addition to regular target structures), e.g., in one or two layers, which are used to calibrate and remove PPE, especially when related to asymmetric effects such as scanner aberrations, off-axis illumination and other error sources.
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