公开(公告)号：US20200083445A1

公开(公告)日：2020-03-12

申请号：US16201295

申请日：2018-11-27

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Young Min JHON ,  Yong Tae KIM ,  Chun Keun KIM ,  Young-Hwan KIM ,  Minho CHOI ,  Sehyun KWON

IPC: H01L45/00 ,  H01L27/24

Abstract: The present invention provides a chalcogenide phase-change material represented by the following Chemical Formula 1, and a memory device including the same. Ma(AxSbyTe(1-x-y))b  [Chemical Formula 1] In Chemical Formula 1, M denotes an element having a doping formation energy ΔEf in a range of −3 eV/atom to 0.5 eV/atom, A denotes indium (In) or germanium (Ge), a and b are each positive numbers and selected to satisfy a+b=1, x ranges from 0.15 to 0.3, and y ranges from 0.05 to 0.25.

公开(公告)号：US20220154339A1

公开(公告)日：2022-05-19

申请号：US16952530

申请日：2020-11-19

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： In Soo KIM ,  Chun Keun KIM ,  KWAN IL LEE ,  Gumin KANG ,  Joon Hyun KANG ,  Jin Gu KANG ,  Wonsuk LEE

IPC: C23C16/52 ,  C23C16/455 ,  G01N21/65 ,  C23C16/44 ,  G01J3/44 ,  G01J3/02

Abstract: A thin film deposition apparatus mounted with a Raman analysis system is discussed. The thin film deposition apparatus includes a reaction chamber providing an inner space for forming a thin film. An opening is formed on the thin film deposition apparatus to be connected to the reaction chamber, and the opening is closed by a window through which light can be transmitted.

公开(公告)号：US20190333779A1

公开(公告)日：2019-10-31

申请号：US16270594

申请日：2019-02-08

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Gumin KANG ,  Il Ki HAN ,  S. Joon KWON ,  Young-Hwan KIM ,  Hyungduk KO ,  Chun Keun KIM

IPC: H01L21/321 ,  H01L21/66 ,  H01L21/306 ,  H01L21/3105

Abstract: A method for surface planarization of an object using a light source of a specific wavelength according to an embodiment includes: providing an object in a main chamber; injecting an etching gas into the main chamber; inputting the light source of a specific wavelength onto a surface of the object; and controlling a temperature of the object. According to the method, it is possible to minimize the side effects such as scratches or contamination of the sample that occur in a conventional chemical-mechanical planarization process. In addition, it is possible to allow precise planarization in nanometers (nm) and simultaneously perform planarization to a side surface of a device as well as a large-sized surface, thereby reducing cost and time required for the planarization process. Moreover, since the surface roughness and the electrical conductivity are improved, it is possible to increase the efficiency and output of the LED device.

公开(公告)号：US20130214411A1

公开(公告)日：2013-08-22

申请号：US13659345

申请日：2012-10-24

Applicant: Korea Institute of Science and Technology

Inventor： Young Hwan KIM ,  Yong Tae KIM ,  Seong Il KIM ,  Chun Keun KIM

IPC: H01L23/48 ,  H01L21/768

CPC classification number: H01L23/53238 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/7684 ,  H01L21/76843 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a method of manufacturing a metal interconnect of a semiconductor device including: forming a interconnect hole by patterning an interlayer insulating film formed on a substrate; performing a nitriding treatment on a surface of the interlayer insulating film by injecting a gas including nitrogen into a deposition apparatus in which the substrate is disposed; forming a diffusion preventing film by injecting the gas including nitrogen and a metal source gas into the deposition apparatus together; filling the interconnect hole with a metal; and removing the metal formed on a part other than the interconnect hole by a chemical mechanical polishing (CMP) process. Accordingly, the mechanical strength of the interlayer insulating film is increased, thereby preventing scratches or defects that are generated during the chemical mechanical polishing process.

Abstract translation: 提供一种制造半导体器件的金属互连的方法，包括：通过图案化形成在衬底上的层间绝缘膜来形成互连孔; 通过将包含氮气的气体注入到其中设置所述基板的沉积设备中来对所述层间绝缘膜的表面进行氮化处理; 通过将包含氮气和金属源气体的气体注入沉积设备来形成扩散防止膜; 用金属填充互连孔; 以及通过化学机械抛光（CMP）工艺除去形成在互连孔以外的部分上的金属。 因此，层间绝缘膜的机械强度增加，从而防止在化学机械抛光过程中产生的划痕或缺陷。