公开(公告)号：US20130214411A1

公开(公告)日：2013-08-22

申请号：US13659345

申请日：2012-10-24

Applicant: Korea Institute of Science and Technology

Inventor： Young Hwan KIM ,  Yong Tae KIM ,  Seong Il KIM ,  Chun Keun KIM

IPC: H01L23/48 ,  H01L21/768

CPC classification number: H01L23/53238 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/7684 ,  H01L21/76843 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a method of manufacturing a metal interconnect of a semiconductor device including: forming a interconnect hole by patterning an interlayer insulating film formed on a substrate; performing a nitriding treatment on a surface of the interlayer insulating film by injecting a gas including nitrogen into a deposition apparatus in which the substrate is disposed; forming a diffusion preventing film by injecting the gas including nitrogen and a metal source gas into the deposition apparatus together; filling the interconnect hole with a metal; and removing the metal formed on a part other than the interconnect hole by a chemical mechanical polishing (CMP) process. Accordingly, the mechanical strength of the interlayer insulating film is increased, thereby preventing scratches or defects that are generated during the chemical mechanical polishing process.

Abstract translation: 提供一种制造半导体器件的金属互连的方法，包括：通过图案化形成在衬底上的层间绝缘膜来形成互连孔; 通过将包含氮气的气体注入到其中设置所述基板的沉积设备中来对所述层间绝缘膜的表面进行氮化处理; 通过将包含氮气和金属源气体的气体注入沉积设备来形成扩散防止膜; 用金属填充互连孔; 以及通过化学机械抛光（CMP）工艺除去形成在互连孔以外的部分上的金属。 因此，层间绝缘膜的机械强度增加，从而防止在化学机械抛光过程中产生的划痕或缺陷。

公开(公告)号：US20200083445A1

公开(公告)日：2020-03-12

申请号：US16201295

申请日：2018-11-27

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Young Min JHON ,  Yong Tae KIM ,  Chun Keun KIM ,  Young-Hwan KIM ,  Minho CHOI ,  Sehyun KWON

IPC: H01L45/00 ,  H01L27/24

Abstract: The present invention provides a chalcogenide phase-change material represented by the following Chemical Formula 1, and a memory device including the same. Ma(AxSbyTe(1-x-y))b  [Chemical Formula 1] In Chemical Formula 1, M denotes an element having a doping formation energy ΔEf in a range of −3 eV/atom to 0.5 eV/atom, A denotes indium (In) or germanium (Ge), a and b are each positive numbers and selected to satisfy a+b=1, x ranges from 0.15 to 0.3, and y ranges from 0.05 to 0.25.

公开(公告)号：US20130224908A1

公开(公告)日：2013-08-29

申请号：US13672943

申请日：2012-11-09

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Young Hwan KIM ,  Yong Tae KIM ,  Jinn Il CHOI

IPC: H01L45/00

CPC classification number: H01L45/16 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1675

Abstract: A method of manufacturing a phase-change random access memory includes: sequentially depositing an insulating layer, a first electrode layer, a phase change material layer, and a transfer material layer on a substrate; forming an array pattern in the transfer material layer using a laser interference lithography process; forming a metal layer on the transfer material layer having the array pattern formed; forming a second electrode layer by removing the transfer material layer; and forming a phase change layer by etching the phase change material layer using the second electrode layer as a mask. Accordingly, the manufacturing process of the phase-change random access memory may achieve an increase in speed and may be simplified.

Abstract translation: 制造相变随机存取存储器的方法包括：在衬底上依次沉积绝缘层，第一电极层，相变材料层和转印材料层; 使用激光干涉光刻工艺在转印材料层中形成阵列图案; 在形成有阵列图案的转印材料层上形成金属层; 通过去除转移材料层形成第二电极层; 以及通过使用第二电极层作为掩模蚀刻相变材料层来形成相变层。 因此，相变随机存取存储器的制造过程可以实现速度的提高并且可以被简化。