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公开(公告)号:US11177634B1
公开(公告)日:2021-11-16
申请号:US16871730
申请日:2020-05-11
Applicant: KYOCERA SLD Laser, Inc.
Inventor: Melvin McLaurin , James W. Raring , Christiane Elsass , Thiago P. Melo , Mathew C. Schmidt
Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.
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公开(公告)号:US11749969B1
公开(公告)日:2023-09-05
申请号:US17843702
申请日:2022-06-17
Applicant: KYOCERA SLD Laser, Inc.
Inventor: James W. Raring , You-Da Lin , Christiane Elsass
IPC: H01S5/343 , H01S5/32 , H01L33/08 , H01S5/20 , H01S5/34 , H01S5/22 , H01S5/028 , H01L33/16 , H01S5/00 , H01S5/042 , H01L21/027 , H01L21/04 , H01L21/28 , H01L21/302 , H01L21/311 , H01L21/461 , H01L21/469 , H01L21/48 , H10N30/082
CPC classification number: H01S5/34333 , H01L33/08 , H01S5/028 , H01S5/0287 , H01S5/2009 , H01S5/2201 , H01S5/2214 , H01S5/3216 , H01S5/320275 , H01S5/3401 , H01L21/0274 , H01L21/042 , H01L21/28123 , H01L21/302 , H01L21/311 , H01L21/461 , H01L21/469 , H01L21/4828 , H01L33/16 , H01S5/0014 , H01S5/04252 , H01S5/22 , H01S5/3214 , H10N30/082
Abstract: An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/−10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.
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公开(公告)号:US11387630B1
公开(公告)日:2022-07-12
申请号:US17108914
申请日:2020-12-01
Applicant: KYOCERA SLD Laser, Inc.
Inventor: James W. Raring , You-Da Lin , Christiane Elsass
IPC: H01S5/343 , H01S5/32 , H01L33/08 , H01S5/20 , H01S5/34 , H01S5/22 , H01S5/028 , H01L33/16 , H01S5/00 , H01S5/042 , H01L21/027 , H01L21/04 , H01L21/28 , H01L21/302 , H01L21/311 , H01L21/461 , H01L21/469 , H01L21/48 , H01L41/332
Abstract: An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/−10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.
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