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公开(公告)号：US5083226A
公开(公告)日：1992-01-21
申请号：US410495
申请日：1989-09-21
申请人： Kazuo Shiiki , Yoshihiro Shiroishi , Norio Ohta , Toshiaki Tsuyoshi , Hisashi Takano , Fumio Kugiya
发明人： Kazuo Shiiki , Yoshihiro Shiroishi , Norio Ohta , Toshiaki Tsuyoshi , Hisashi Takano , Fumio Kugiya
CPC分类号： G11B5/82 , G11B5/596 , G11B5/59683
摘要： A magnetic-disk drive includes: a magnetic disk having a ridge pattern consisting of at least one ridge extending in the circumferential direction; a recording/reproduction head arranged over the surface of the magnetic disk and having a track width larger than the width of the ridge of the pattern and smaller than the pattern pitch; a device for rotating the magnetic disk; and a recording/reproduction circuit.
摘要翻译： 磁盘驱动器包括：磁盘，其具有由沿圆周方向延伸的至少一个脊的脊图形; 记录/再现头，布置在磁盘的表面上，并且具有比图案的脊的宽度大于图案间距的轨道宽度; 用于旋转磁盘的装置; 和记录/再现电路。
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2.发明授权Magnetic apparatus with perpendicular recording medium and head having multilayered reproducing element using tunneling effect 失效具有垂直记录介质和头部的磁性装置具有使用隧道效应的多层再现元件公开(公告)号：US07054120B2
公开(公告)日：2006-05-30
申请号：US10700500
申请日：2003-11-05
申请人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
发明人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3967 , G11B2005/0002 , G11B2005/0016 , G11B2005/3996 , H01F10/324 , H01F10/3254 , H01F10/3268 , H01L43/08 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49155
摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子， 使得电流在中间层中流动。 构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。 因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场 穿透特性，穿过中间层。
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3.发明授权公开(公告)号：US06278593B1
公开(公告)日：2001-08-21
申请号：US09468309
申请日：1999-12-21
申请人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
发明人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
IPC分类号： G11B539
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3967 , G11B2005/0002 , G11B2005/0016 , G11B2005/3996 , H01F10/324 , H01F10/3254 , H01F10/3268 , H01L43/08 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49155
摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semicondutor or an antiferromagnetic material against the magnetic layers, and the magneto-resistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件具有至少形成在相对的磁体上的端子 层，使得电流在中间层中流动。 构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。 因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场 穿透特性，穿过中间层。
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4.发明申请公开(公告)号：US20060152862A1
公开(公告)日：2006-07-13
申请号：US11371244
申请日：2006-03-09
申请人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
发明人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
IPC分类号： G11B5/33
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3967 , G11B2005/0002 , G11B2005/0016 , G11B2005/3996 , H01F10/324 , H01F10/3254 , H01F10/3268 , H01L43/08 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49155
摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子， 从而电流在中间层中流动。 构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。 因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场 穿透特性，穿过中间层。
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公开(公告)号：US07159303B2
公开(公告)日：2007-01-09
申请号：US11371244
申请日：2006-03-09
申请人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
发明人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
IPC分类号： G11B5/127
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3967 , G11B2005/0002 , G11B2005/0016 , G11B2005/3996 , H01F10/324 , H01F10/3254 , H01F10/3268 , H01L43/08 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49155
摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子， 使得电流在中间层中流动。 构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。 因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场 穿透特性，穿过中间层。
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6.发明授权Magnetic head with conductors formed on endlayers of a multilayer film having magnetic layer coercive force difference 失效具有形成在具有磁性层矫顽力差的多层膜的端层上的导体的磁头公开(公告)号：US06687099B2
公开(公告)日：2004-02-03
申请号：US10270120
申请日：2002-10-15
申请人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
发明人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
IPC分类号： G11B539
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3967 , G11B2005/0002 , G11B2005/0016 , G11B2005/3996 , H01F10/324 , H01F10/3254 , H01F10/3268 , H01L43/08 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49155
摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子， 使得构成磁阻效应元件的所有磁性层基本上与磁记录介质的记录表面成直角相对。 因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场 穿透特性，穿过中间层。
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7.发明授权Magnetic disk apparatus including magnetic head having multilayered reproducing element using tunneling effect 失效磁盘装置包括使用隧道效应的具有多层再生元件的磁头公开(公告)号：US06483677B2
公开(公告)日：2002-11-19
申请号：US09931897
申请日：2001-08-20
申请人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
发明人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
IPC分类号： G11B539
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3967 , G11B2005/0002 , G11B2005/0016 , G11B2005/3996 , H01F10/324 , H01F10/3254 , H01F10/3268 , H01L43/08 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49155
摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子， 使得电流在中间层中流动。 构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。 因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场 穿透特性，穿过中间层。
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8.发明授权
公开(公告)号：US6011674A
公开(公告)日：2000-01-04
申请号：US626333
申请日：1996-04-02
申请人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
发明人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3967 , H01F10/324 , H01F10/3254 , H01F10/3268 , H01L43/08 , G11B2005/0002 , G11B2005/0016 , G11B2005/3996 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49155
摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-denisity recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子， 使得电流在中间层中流动。 构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。 因此，可以极大地降低与磁记录介质的记录表面相对的磁性层的面积，因此可以通过具有一个磁记录介质的电流来检测来自高耐度记录磁记录介质的非常狭窄区域的磁场 穿透特性，穿过中间层。
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公开(公告)号：US5726837A
公开(公告)日：1998-03-10
申请号：US328090
申请日：1994-10-24
申请人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
发明人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3967 , H01F10/324 , H01F10/3254 , H01F10/3268 , H01L43/08 , G11B2005/0002 , G11B2005/0016 , G11B2005/3996 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49155
摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子， 使得电流在中间层中流动。 构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。 因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场 穿透特性，穿过中间层。
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公开(公告)号：US5390061A
公开(公告)日：1995-02-14
申请号：US710775
申请日：1991-06-05
申请人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
发明人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3967 , H01F10/324 , H01F10/3254 , H01F10/3268 , H01L43/08 , G11B2005/0002 , G11B2005/0016 , G11B2005/3996 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49155
摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magneto-resistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件具有至少形成在相对的磁体上的端子 层，使得电流在中间层中流动。 构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。 因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场 穿透特性，穿过中间层。
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