公开(公告)号：US06613500B1

公开(公告)日：2003-09-02

申请号：US09824079

申请日：2001-04-02

申请人： Khoi A. Phan ,  Bhanwar Singh ,  Ramkumar Subramanian ,  Michael K. Templeton ,  Jeff Erhardt

发明人： Khoi A. Phan ,  Bhanwar Singh ,  Ramkumar Subramanian ,  Michael K. Templeton ,  Jeff Erhardt

IPC分类号： G03F700

CPC分类号： G03F7/70425 ,  G03F7/2022 ,  G03F7/203 ,  G03F7/70466

摘要： One aspect of the present invention relates to a method for reducing resist residue defects on a wafer structure. The method involves providing a semiconductor structure having a photoresist, the photoresist comprising open areas and circuit areas thereon; irradiating the open areas and circuit areas through a first photomask with a first energy dose to effect an image-wise pattern in the photoresist; irradiating the open areas of the photoresist through a second photomask with a second energy dose; and developing the photoresist.

摘要翻译： 本发明的一个方面涉及减少晶片结构上的抗蚀剂残留缺陷的方法。 该方法包括提供具有光致抗蚀剂的半导体结构，光致抗蚀剂包括开放区域和其上的电路区域; 通过具有第一能量剂量的第一光掩模照射开放区域和电路区域以在光致抗蚀剂中实现成像图案; 通过具有第二能量剂量的第二光掩模照射光致抗蚀剂的开放区域; 并显影光致抗蚀剂。

公开(公告)号：US06444381B1

公开(公告)日：2002-09-03

申请号：US09729295

申请日：2000-12-04

申请人： Bhanwar Singh ,  Ramkumar Subramanian ,  Michael K. Templeton ,  Bharath Rangarajan ,  Khoi A. Phan ,  Bryan K. Choo ,  Sanjay K. Yedur

发明人： Bhanwar Singh ,  Ramkumar Subramanian ,  Michael K. Templeton ,  Bharath Rangarajan ,  Khoi A. Phan ,  Bryan K. Choo ,  Sanjay K. Yedur

IPC分类号： G03F900

CPC分类号： G03F1/74 ,  Y10S430/143

摘要： One aspect of the present invention relates to a method for reducing carbon contamination on a mask involving placing a mask plate having carbon-containing contaminants thereon in a processing chamber; simultaneously contacting the mask plate with oxygen and exposing the mask plate with a flood exposure of electron beams wherein the carbon-containing contaminants are converted to a by-product; and removing the by-product from the processing chamber.

摘要翻译： 本发明的一个方面涉及一种用于减少掩模上的碳污染的方法，其涉及将具有含碳污染物的掩模板放置在处理室中; 同时使掩模板与氧气接触，并将电子束的暴露暴露于掩模板，其中含碳污染物转化为副产物; 并从处理室中除去副产物。

公开(公告)号：US06459482B1

公开(公告)日：2002-10-01

申请号：US09729294

申请日：2000-12-04

申请人： Bhanwar Singh ,  Ramkumar Subramanian ,  Khoi A. Phan ,  Bharath Rangarajan ,  Michael K. Templeton ,  Sanjay K. Yedur ,  Bryan K. Choo

发明人： Bhanwar Singh ,  Ramkumar Subramanian ,  Khoi A. Phan ,  Bharath Rangarajan ,  Michael K. Templeton ,  Sanjay K. Yedur ,  Bryan K. Choo

IPC分类号： G01J110

CPC分类号： H01J37/28 ,  H01J2237/2826

摘要： The present invention provides SEM systems, SEM calibration standards, and SEM calibration methods that improved accuracy in critical dimension measurements. The calibration standards have features formed with an amorphous material such as amorphous silicon. Amorphous materials lack the crystal grain structure of materials such as polysilicon and are capable of providing sharper edged features and higher accuracy patterns than grained materials. The amorphous material can be bound to a silicon wafer substrate through an intermediate layer of material, such as silicon dioxide. Where the intermediate layer is insulating material, as is silicon dioxide, the intermediate layer may be patterned with gaps to provide for electrical communication between the amorphous silicon and the silicon wafer. Charges imparted to the amorphous silicon during electron beam scanning may thereby drain to the silicon wafer rather than accumulating to a level where they would distort the electron beam.

摘要翻译： 本发明提供SEM系统，SEM校准标准和SEM校准方法，提高了临界尺寸测量的精度。 校准标准品具有非晶体材料如非晶硅形成的特征。 无定形材料缺乏诸如多晶硅的材料的晶粒结构，并且能够提供比颗粒材料更尖锐的边缘特征和更高精度的图案。 非晶材料可以通过诸如二氧化硅的材料的中间层与硅晶片衬底结合。 在中间层是绝缘材料的情况下，如二氧化硅那样，中间层可以用间隙图案化以提供非晶硅和硅晶片之间的电连通。 因此，在电子束扫描期间赋予非晶硅的电荷可以从而被排出到硅晶片，而不是积聚到它们会使电子束变形的水平。

公开(公告)号：US06592932B2

公开(公告)日：2003-07-15

申请号：US09814131

申请日：2001-03-21

申请人： Ramkumar Subramanian ,  Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh ,  Michael K. Templeton ,  Sanjay K. Yedur

发明人： Ramkumar Subramanian ,  Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh ,  Michael K. Templeton ,  Sanjay K. Yedur

IPC分类号： B05D312

CPC分类号： H01L21/6715 ,  G03F7/3021

摘要： A system and method is provided that facilitates the application of a uniform layer of developer material on a photoresist material layer. The system includes a nozzle adapted to apply a predetermined volume of developer material on a photoresist material layer along a linear path having a length approximately equal to the diameter of the photoresist material layer. A movement system moves the nozzle to a first position offset from a central region of the photoresist material layer for applying a first predetermined volume of developer material to the photoresist material layer while the developer material is spin coated. The movement system also moves the nozzle to a second position offset from the central region for applying a second predetermined volume of developer material to the photoresist material layer while the developer is spin coated. The first position is located on an opposite side of the central region with respect to the second position. A method of adjusting the offset position and/or volume of developer material applied at the first and second position is also provided. The method utilizes developed photoresist material layer thickness data provided by a measurement system to adjust the offset position and/or volume of the developer.

摘要翻译： 提供了一种有助于在光致抗蚀剂材料层上施加均匀的显影剂材料层的系统和方法。 该系统包括适于沿着具有大致等于光致抗蚀剂材料层的直径的直线路径的光致抗蚀剂材料层上施加预定体积的显影剂材料的喷嘴。 移动系统将喷嘴移动到偏离光致抗蚀剂材料层的中心区域的第一位置，以在旋转涂覆显影剂材料的同时将第一预定体积的显影剂材料施加到光致抗蚀剂材料层。 移动系统还将喷嘴移动到偏离中心区域的第二位置，以在旋涂涂覆显影剂的同时将第二预定体积的显影剂材料施加到光致抗蚀剂材料层。 第一位置相对于第二位置位于中心区域的相反侧。 还提供了一种调节在第一和第二位置施加的显影剂材料的偏移位置和/或体积的方法。 该方法利用由测量系统提供的显影的光致抗蚀剂材料层厚度数据来调节显影剂的偏移位置和/或体积。

公开(公告)号：US06270579B1

公开(公告)日：2001-08-07

申请号：US09429995

申请日：1999-10-29

申请人： Ramkumar Subramanian ,  Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh ,  Michael K. Templeton ,  Sanjay K. Yedur

发明人： Ramkumar Subramanian ,  Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh ,  Michael K. Templeton ,  Sanjay K. Yedur

IPC分类号： B05C1102

CPC分类号： H01L21/6715 ,  G03F7/3028

摘要： A system and method is provided that facilitates the application of a uniform layer of developer material on a photoresist material layer. The system includes a multiple tip nozzle and a movement system that moves the nozzle to an operating position above a central region of a photoresist material layer located on a substrate, and applies a volume of developer as the nozzle scan moves across a predetermined path. The movement system moves the nozzle in two dimensions by providing an arm that has a first arm member that is pivotable about a first rotational axis and a second arm member that is pivotable about a second rotational axis or is movable along a translational axis. The system also provides a measurement system that measures the thickness uniformity of the developed photoresist material layer disposed on a test wafer. The thickness uniformity data is used to reconfigure the predetermined path of the nozzle as the developer is applied. The thickness uniformity data can also be used to adjust the volume of developer applied along the path and/or the volume flow rate.

摘要翻译： 提供了一种有助于在光致抗蚀剂材料层上施加均匀的显影剂材料层的系统和方法。 该系统包括多个尖端喷嘴和运动系统，该运动系统将喷嘴移动到位于基板上的光致抗蚀剂材料层的中心区域上方的操作位置，并且当喷嘴扫描移动穿过预定路径时施加一定体积的显影剂。 移动系统通过提供具有第一臂构件的臂来移动喷嘴，该臂具有可围绕第一旋转轴线枢转的第一臂构件和可围绕第二旋转轴线枢转或可沿着平移轴线移动的第二臂构件。 该系统还提供了测量设置在测试晶片上的显影的光致抗蚀剂材料层的厚度均匀性的测量系统。 当施加显影剂时，厚度均匀性数据用于重新配置喷嘴的预定路径。 厚度均匀性数据也可用于调节沿路径施加的显影剂的体积和/或体积流量。

公开(公告)号：US06541184B1

公开(公告)日：2003-04-01

申请号：US09655979

申请日：2000-09-06

申请人： Ramkumar Subramanian ,  Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh ,  Michael K. Templeton ,  Sanjay K. Yedur

发明人： Ramkumar Subramanian ,  Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh ,  Michael K. Templeton ,  Sanjay K. Yedur

IPC分类号： G03C556

CPC分类号： H01L21/6715 ,  G03F7/3028

摘要： A system and method is provided that facilitates the application of a uniform layer of developer material on a photoresist material layer. The system includes a multiple tip nozzle and a movement system that moves the nozzle to an operating position above a central region of a photoresist material layer located on a substrate, and applies a volume of developer as the nozzle scan moves across a predetermined path. The movement system moves the nozzle in two dimensions by providing an arm that has a first arm member that is pivotable about a first rotational axis and a second arm member that is pivotable about a second rotational axis or is movable along a translational axis. The system also provides a measurement system that measures the thickness uniformity of the developed photoresist material layer disposed on a test wafer. The thickness uniformity data is used to reconfigure the predetermined path of the nozzle as the developer is applied. The thickness uniformity data can also be used to adjust the volume of developer applied along the path and/or the volume flow rate.

摘要翻译： 提供了一种有助于在光致抗蚀剂材料层上施加均匀的显影剂材料层的系统和方法。 该系统包括多个尖端喷嘴和运动系统，该运动系统将喷嘴移动到位于基板上的光致抗蚀剂材料层的中心区域上方的操作位置，并且当喷嘴扫描移动穿过预定路径时施加一定体积的显影剂。 移动系统通过提供具有第一臂构件的臂来移动喷嘴，该臂具有可围绕第一旋转轴线枢转的第一臂构件和可围绕第二旋转轴线枢转或可沿着平移轴线移动的第二臂构件。 该系统还提供了测量设置在测试晶片上的显影的光致抗蚀剂材料层的厚度均匀性的测量系统。 当施加显影剂时，厚度均匀性数据用于重新配置喷嘴的预定路径。 厚度均匀性数据也可用于调节沿路径施加的显影剂的体积和/或体积流量。

公开(公告)号：US06451512B1

公开(公告)日：2002-09-17

申请号：US09565691

申请日：2000-05-01

申请人： Bharath Rangarajan ,  Ramkumar Subramanian ,  Khoi A. Phan ,  Bhanwar Singh ,  Michael K. Templeton ,  Sanjay K. Yedur ,  Bryan K. Choo

发明人： Bharath Rangarajan ,  Ramkumar Subramanian ,  Khoi A. Phan ,  Bhanwar Singh ,  Michael K. Templeton ,  Sanjay K. Yedur ,  Bryan K. Choo

IPC分类号： G03F700

CPC分类号： G03F7/265 ,  H01L21/0273 ,  H01L21/31144 ,  H01L21/32139

摘要： In one embodiment, the present invention relates to a method of processing an ultrathin resist, involving the steps of depositing the ultra-thin photoresist over a semiconductor substrate, the ultra-thin resist having a thickness less than about 3,000 Å; irradiating the ultra-thin resist with electromagnetic radiation having a wavelength of about 250 nm or less; developing the ultra-thin resist; and contacting the ultra-thin resist with a silicon containing compound in an environment of at least one of ultraviolet light and ozone, wherein contact of the ultra-thin resist with the silicon containing compound is conducted between irradiating and developing the ultra-thin resist or after developing the ultra-thin resist.

摘要翻译： 在一个实施方案中，本发明涉及一种处理超薄抗蚀剂的方法，包括以下步骤：在半导体衬底上沉积超薄光致抗蚀剂，超薄抗蚀剂的厚度小于约; 用波长约250nm或更小的电磁辐射照射超薄抗蚀剂; 开发超薄抗蚀剂; 以及在紫外光和臭氧中的至少一种的环境下使超薄抗蚀剂与含硅化合物接触，其中超薄抗蚀剂与含硅化合物的接触在照射和显影超薄抗蚀剂之间进行，或 在开发超薄抗蚀剂后。

公开(公告)号：US06248175B1

公开(公告)日：2001-06-19

申请号：US09430001

申请日：1999-10-29

申请人： Ramkumar Subramanian ,  Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh ,  Michael K. Templeton ,  Sanjay K. Yedur

发明人： Ramkumar Subramanian ,  Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh ,  Michael K. Templeton ,  Sanjay K. Yedur

IPC分类号： B05C1100

CPC分类号： H01L21/6715 ,  G03F7/3021

摘要： A system and method is provided that facilitates the application of a uniform layer of developer material on a photoresist material layer. The system includes a nozzle adapted to apply a predetermined volume of developer material on a photoresist material layer along a linear path having a length approximately equal to the diameter of the photoresist material layer. A movement system moves the nozzle to a first position offset from a central region of the photoresist material layer for applying a first predetermined volume of developer material to the photoresist material layer while the developer material is spin coated. The movement system also moves the nozzle to a second position offset from the central region for applying a second predetermined volume of developer material to the photoresist material layer while the developer is spin coated. The first position is located on an opposite side of the central region with respect to the second position. A method of adjusting the offset position and/or volume of developer material applied at the first and second position is also provided. The method utilizes developed photoresist material layer thickness data provided by a measurement system to adjust the offset position and/or volume of the developer.

摘要翻译： 提供了一种有助于在光致抗蚀剂材料层上施加均匀的显影剂材料层的系统和方法。 该系统包括适于沿着具有大致等于光致抗蚀剂材料层的直径的直线路径的光致抗蚀剂材料层上施加预定体积的显影剂材料的喷嘴。 移动系统将喷嘴移动到偏离光致抗蚀剂材料层的中心区域的第一位置，以在旋转涂覆显影剂材料的同时将第一预定体积的显影剂材料施加到光致抗蚀剂材料层。 移动系统还将喷嘴移动到偏离中心区域的第二位置，以在显影剂被旋涂时施加第二预定体积的显影剂材料到光致抗蚀剂材料层。 第一位置相对于第二位置位于中心区域的相反侧。 还提供了一种调节在第一和第二位置施加的显影剂材料的偏移位置和/或体积的方法。 该方法利用由测量系统提供的显影的光致抗蚀剂材料层厚度数据来调节显影剂的偏移位置和/或体积。

公开(公告)号：US07153364B1

公开(公告)日：2006-12-26

申请号：US10000208

申请日：2001-10-23

申请人： Bharath Rangarajan ,  Ramkumar Subramanian ,  Khoi A. Phan ,  Ursula Q. Quinto ,  Michael K. Templeton

发明人： Bharath Rangarajan ,  Ramkumar Subramanian ,  Khoi A. Phan ,  Ursula Q. Quinto ,  Michael K. Templeton

IPC分类号： B05B1/28 ,  B05B15/04 ,  B05B3/00

CPC分类号： H01L21/6715 ,  B05B15/50 ,  B05C11/08

摘要： The present invention provides a system and methodology for dummy-dispensing resist though a dispense head while mitigating waste associated with the dummy-dispense process. The dummy dispensed resist is returned to a reservoir from which it was taken. Between substrate applications, the dispense head can be positioned to dispense resist into a return line. The flow of resist from the dispense head keeps resist from drying at the dispense head. By funneling the dummy-dispensed resist into a return line with low volume, for example, waste from the dummy-dispensing process can be mitigated.

摘要翻译： 本发明提供了一种用于分配头的虚拟分配抗蚀剂的系统和方法，同时减轻与虚拟分配过程相关的废物。 虚拟分配的抗蚀剂返回到被采集的储存器。 在基板应用之间，分配头可以被定位成将抗蚀剂分配到返回线中。 来自分配头的抗蚀剂的流动在分配头保持抗干燥。 通过将虚拟分配的抗蚀剂漏出到具有低体积的返回管线中，例如，可以减轻来自虚拟分配过程的废物。

公开(公告)号：US06556303B1

公开(公告)日：2003-04-29

申请号：US09902366

申请日：2001-07-10

申请人： Bharath Rangarajan ,  Michael K. Templeton ,  Bhanwar Singh ,  Khoi A. Phan

发明人： Bharath Rangarajan ,  Michael K. Templeton ,  Bhanwar Singh ,  Khoi A. Phan

IPC分类号： G01B1114

CPC分类号： G01B11/0683 ,  G01B11/0625 ,  H01L22/12

摘要： The present invention is directed to a system and a method for controlling a thin film formation on a moving substrate as part of a process for manufacturing an integrated circuit. The invention involves the use of scatterometry to control the thin film formation process by analyzing the thin film on the moving substrate in a periodic manner. A registration feature associated with the moving substrate can be utilized in conjunction with a signaling system to determine a position of the moving substrate, whereby a repeatable analysis of a corresponding location on the moving substrate can be performed. Scatterometry permits in-situ measurements of thin film formation progress, whereby thin film formation process conditions can be controlled in a feedback loop to obtain a targeted result. Scatterometry can also be facilitated by providing a grating pattern on a non-production portion of the substrate.

摘要翻译： 本发明涉及一种用于控制移动衬底上的薄膜形成的系统和方法，作为用于制造集成电路的工艺的一部分。 本发明涉及使用散射法来以周期性方式分析移动基片上的薄膜来控制薄膜形成过程。 与移动基板相关联的配准特征可以与信号系统结合使用，以确定移动基板的位置，由此可以执行移动基板上对应位置的可重复分析。 散射测量允许原位测量薄膜形成进程，由此可以在反馈回路中控制薄膜形成工艺条件以获得目标结果。 也可以通过在基板的非生产部分上提供光栅图案来促进散射测量。